DE2346569A1 - Bistabiler widerstand mit von aeusserer energiezufuhr unabhaengigen zustaenden und verfahren zu seiner herstellung - Google Patents

Bistabiler widerstand mit von aeusserer energiezufuhr unabhaengigen zustaenden und verfahren zu seiner herstellung

Info

Publication number
DE2346569A1
DE2346569A1 DE19732346569 DE2346569A DE2346569A1 DE 2346569 A1 DE2346569 A1 DE 2346569A1 DE 19732346569 DE19732346569 DE 19732346569 DE 2346569 A DE2346569 A DE 2346569A DE 2346569 A1 DE2346569 A1 DE 2346569A1
Authority
DE
Germany
Prior art keywords
resistance structure
structure according
bistable
insulating material
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19732346569
Other languages
German (de)
English (en)
Inventor
Andreas Moser
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE2346569A1 publication Critical patent/DE2346569A1/de
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C13/00—Resistors not provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/25—Multistable switching devices, e.g. memristors based on bulk electronic defects, e.g. trapping of electrons
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/823—Device geometry adapted for essentially horizontal current flow, e.g. bridge type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
DE19732346569 1972-12-22 1973-09-15 Bistabiler widerstand mit von aeusserer energiezufuhr unabhaengigen zustaenden und verfahren zu seiner herstellung Pending DE2346569A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH1874772A CH557081A (de) 1972-12-22 1972-12-22 Bistabiler widerstand mit von aeusserer energiezufuhr unabhaengigen zustaenden.

Publications (1)

Publication Number Publication Date
DE2346569A1 true DE2346569A1 (de) 1974-06-27

Family

ID=4435044

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19732346569 Pending DE2346569A1 (de) 1972-12-22 1973-09-15 Bistabiler widerstand mit von aeusserer energiezufuhr unabhaengigen zustaenden und verfahren zu seiner herstellung

Country Status (7)

Country Link
JP (1) JPS5342512B2 (enrdf_load_stackoverflow)
CA (1) CA1012655A (enrdf_load_stackoverflow)
CH (1) CH557081A (enrdf_load_stackoverflow)
DE (1) DE2346569A1 (enrdf_load_stackoverflow)
FR (1) FR2211728A1 (enrdf_load_stackoverflow)
GB (1) GB1432659A (enrdf_load_stackoverflow)
IT (1) IT1001107B (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1681732A3 (de) * 2005-01-12 2008-07-09 Infineon Technologies AG Speichervorrichtung und Herstellungsverfahren

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1986000470A1 (en) * 1984-06-20 1986-01-16 Poley W Leonhard Method for fabricating electronic elements

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2053606A5 (en) * 1969-07-10 1971-04-16 Corning Glass Works Discontinuous thin film multi-stable resistor
JPS492950B1 (enrdf_load_stackoverflow) * 1969-08-21 1974-01-23

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1681732A3 (de) * 2005-01-12 2008-07-09 Infineon Technologies AG Speichervorrichtung und Herstellungsverfahren
US8026123B2 (en) 2005-01-12 2011-09-27 Qimonda Ag Integrated circuit including a memory apparatus and production method

Also Published As

Publication number Publication date
CA1012655A (en) 1977-06-21
CH557081A (de) 1974-12-13
JPS5342512B2 (enrdf_load_stackoverflow) 1978-11-11
GB1432659A (en) 1976-04-22
FR2211728A1 (en) 1974-07-19
JPS4991384A (enrdf_load_stackoverflow) 1974-08-31
FR2211728B1 (enrdf_load_stackoverflow) 1976-06-25
IT1001107B (it) 1976-04-20

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