FR2053606A5 - Discontinuous thin film multi-stable resistor - Google Patents

Discontinuous thin film multi-stable resistor

Info

Publication number
FR2053606A5
FR2053606A5 FR6923491A FR6923491A FR2053606A5 FR 2053606 A5 FR2053606 A5 FR 2053606A5 FR 6923491 A FR6923491 A FR 6923491A FR 6923491 A FR6923491 A FR 6923491A FR 2053606 A5 FR2053606 A5 FR 2053606A5
Authority
FR
France
Prior art keywords
gold film
layer
thin film
discontinuous thin
barium oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR6923491A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Corning Glass Works
Original Assignee
Corning Glass Works
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Corning Glass Works filed Critical Corning Glass Works
Priority to FR6923491A priority Critical patent/FR2053606A5/en
Application granted granted Critical
Publication of FR2053606A5 publication Critical patent/FR2053606A5/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/823—Device geometry adapted for essentially horizontal current flow, e.g. bridge type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Thermistors And Varistors (AREA)
  • Non-Adjustable Resistors (AREA)

Abstract

The resistor comprises electrically conductive discontinuous thin films, which each have a pair of separate voltage dependent resistance states and which together form a parallel connected electrical circuit. The films have a dielectric substrate and their electrical properties can be stabilized, so that their switching potentials, which differ in size, are of fixed voltage. A terminal is used to make electrical connections to the parallel circuit. Specif. two spaced continuous gold film electrodes are positioned on the substrate on either side of a resistive element which comprises a first layer of gold film, a layer of barium oxide barrier material, a second gold film and a second barium oxide layer.
FR6923491A 1969-07-10 1969-07-10 Discontinuous thin film multi-stable resistor Expired FR2053606A5 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR6923491A FR2053606A5 (en) 1969-07-10 1969-07-10 Discontinuous thin film multi-stable resistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR6923491A FR2053606A5 (en) 1969-07-10 1969-07-10 Discontinuous thin film multi-stable resistor

Publications (1)

Publication Number Publication Date
FR2053606A5 true FR2053606A5 (en) 1971-04-16

Family

ID=9037258

Family Applications (1)

Application Number Title Priority Date Filing Date
FR6923491A Expired FR2053606A5 (en) 1969-07-10 1969-07-10 Discontinuous thin film multi-stable resistor

Country Status (1)

Country Link
FR (1) FR2053606A5 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2211728A1 (en) * 1972-12-22 1974-07-19 Ibm Bistable resistor for data processing stores - based on tunnelling of charge carriers between metal particles embedded in glass

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2211728A1 (en) * 1972-12-22 1974-07-19 Ibm Bistable resistor for data processing stores - based on tunnelling of charge carriers between metal particles embedded in glass

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Legal Events

Date Code Title Description
ST Notification of lapse