FR2211728A1 - Bistable resistor for data processing stores - based on tunnelling of charge carriers between metal particles embedded in glass - Google Patents
Bistable resistor for data processing stores - based on tunnelling of charge carriers between metal particles embedded in glassInfo
- Publication number
- FR2211728A1 FR2211728A1 FR7340562A FR7340562A FR2211728A1 FR 2211728 A1 FR2211728 A1 FR 2211728A1 FR 7340562 A FR7340562 A FR 7340562A FR 7340562 A FR7340562 A FR 7340562A FR 2211728 A1 FR2211728 A1 FR 2211728A1
- Authority
- FR
- France
- Prior art keywords
- tunnelling
- glass
- charge carriers
- particles embedded
- data processing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002800 charge carrier Substances 0.000 title abstract 2
- 239000011521 glass Substances 0.000 title abstract 2
- 239000002923 metal particle Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000011810 insulating material Substances 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000013528 metallic particle Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C13/00—Resistors not provided for elsewhere
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/25—Multistable switching devices, e.g. memristors based on bulk electronic defects, e.g. trapping of electrons
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/823—Device geometry adapted for essentially horizontal current flow, e.g. bridge type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CH1874772A CH557081A (de) | 1972-12-22 | 1972-12-22 | Bistabiler widerstand mit von aeusserer energiezufuhr unabhaengigen zustaenden. |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2211728A1 true FR2211728A1 (en) | 1974-07-19 |
| FR2211728B1 FR2211728B1 (enrdf_load_stackoverflow) | 1976-06-25 |
Family
ID=4435044
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7340562A Granted FR2211728A1 (en) | 1972-12-22 | 1973-11-06 | Bistable resistor for data processing stores - based on tunnelling of charge carriers between metal particles embedded in glass |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS5342512B2 (enrdf_load_stackoverflow) |
| CA (1) | CA1012655A (enrdf_load_stackoverflow) |
| CH (1) | CH557081A (enrdf_load_stackoverflow) |
| DE (1) | DE2346569A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2211728A1 (enrdf_load_stackoverflow) |
| GB (1) | GB1432659A (enrdf_load_stackoverflow) |
| IT (1) | IT1001107B (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1986000470A1 (en) * | 1984-06-20 | 1986-01-16 | Poley W Leonhard | Method for fabricating electronic elements |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102005001460B4 (de) * | 2005-01-12 | 2010-01-14 | Qimonda Ag | Speichervorrichtung und Herstellungsverfahren |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2053606A5 (en) * | 1969-07-10 | 1971-04-16 | Corning Glass Works | Discontinuous thin film multi-stable resistor |
| FR2058109A5 (enrdf_load_stackoverflow) * | 1969-08-21 | 1971-05-21 | Matsushita Electric Ind Co Ltd |
-
1972
- 1972-12-22 CH CH1874772A patent/CH557081A/xx not_active IP Right Cessation
-
1973
- 1973-09-14 CA CA181,067A patent/CA1012655A/en not_active Expired
- 1973-09-15 DE DE19732346569 patent/DE2346569A1/de active Pending
- 1973-10-24 GB GB4951373A patent/GB1432659A/en not_active Expired
- 1973-11-06 FR FR7340562A patent/FR2211728A1/fr active Granted
- 1973-11-28 IT IT41026/73A patent/IT1001107B/it active
- 1973-12-04 JP JP13491073A patent/JPS5342512B2/ja not_active Expired
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2053606A5 (en) * | 1969-07-10 | 1971-04-16 | Corning Glass Works | Discontinuous thin film multi-stable resistor |
| FR2058109A5 (enrdf_load_stackoverflow) * | 1969-08-21 | 1971-05-21 | Matsushita Electric Ind Co Ltd |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1986000470A1 (en) * | 1984-06-20 | 1986-01-16 | Poley W Leonhard | Method for fabricating electronic elements |
Also Published As
| Publication number | Publication date |
|---|---|
| CA1012655A (en) | 1977-06-21 |
| CH557081A (de) | 1974-12-13 |
| JPS5342512B2 (enrdf_load_stackoverflow) | 1978-11-11 |
| GB1432659A (en) | 1976-04-22 |
| DE2346569A1 (de) | 1974-06-27 |
| JPS4991384A (enrdf_load_stackoverflow) | 1974-08-31 |
| FR2211728B1 (enrdf_load_stackoverflow) | 1976-06-25 |
| IT1001107B (it) | 1976-04-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |