IT1001107B - Resistore bistabile perfezionato - Google Patents

Resistore bistabile perfezionato

Info

Publication number
IT1001107B
IT1001107B IT41026/73A IT4102673A IT1001107B IT 1001107 B IT1001107 B IT 1001107B IT 41026/73 A IT41026/73 A IT 41026/73A IT 4102673 A IT4102673 A IT 4102673A IT 1001107 B IT1001107 B IT 1001107B
Authority
IT
Italy
Prior art keywords
perfected
bistable resistor
bistable
resistor
perfected bistable
Prior art date
Application number
IT41026/73A
Other languages
English (en)
Italian (it)
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of IT1001107B publication Critical patent/IT1001107B/it

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C13/00Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C13/00Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0007Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C13/00Resistors not provided for elsewhere
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C7/00Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011Manufacture or treatment of multistable switching devices
    • H10N70/021Formation of switching materials, e.g. deposition of layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20Multistable switching devices, e.g. memristors
    • H10N70/25Multistable switching devices, e.g. memristors based on bulk electronic defects, e.g. trapping of electrons
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801Constructional details of multistable switching devices
    • H10N70/821Device geometry
    • H10N70/823Device geometry adapted for essentially horizontal current flow, e.g. bridge type devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801Constructional details of multistable switching devices
    • H10N70/821Device geometry
    • H10N70/826Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801Constructional details of multistable switching devices
    • H10N70/881Switching materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
IT41026/73A 1972-12-22 1973-11-28 Resistore bistabile perfezionato IT1001107B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH1874772A CH557081A (de) 1972-12-22 1972-12-22 Bistabiler widerstand mit von aeusserer energiezufuhr unabhaengigen zustaenden.

Publications (1)

Publication Number Publication Date
IT1001107B true IT1001107B (it) 1976-04-20

Family

ID=4435044

Family Applications (1)

Application Number Title Priority Date Filing Date
IT41026/73A IT1001107B (it) 1972-12-22 1973-11-28 Resistore bistabile perfezionato

Country Status (7)

Country Link
JP (1) JPS5342512B2 (enrdf_load_stackoverflow)
CA (1) CA1012655A (enrdf_load_stackoverflow)
CH (1) CH557081A (enrdf_load_stackoverflow)
DE (1) DE2346569A1 (enrdf_load_stackoverflow)
FR (1) FR2211728A1 (enrdf_load_stackoverflow)
GB (1) GB1432659A (enrdf_load_stackoverflow)
IT (1) IT1001107B (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1986000470A1 (en) * 1984-06-20 1986-01-16 Poley W Leonhard Method for fabricating electronic elements
DE102005001460B4 (de) * 2005-01-12 2010-01-14 Qimonda Ag Speichervorrichtung und Herstellungsverfahren

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2053606A5 (en) * 1969-07-10 1971-04-16 Corning Glass Works Discontinuous thin film multi-stable resistor
JPS492950B1 (enrdf_load_stackoverflow) * 1969-08-21 1974-01-23

Also Published As

Publication number Publication date
CA1012655A (en) 1977-06-21
CH557081A (de) 1974-12-13
JPS5342512B2 (enrdf_load_stackoverflow) 1978-11-11
GB1432659A (en) 1976-04-22
DE2346569A1 (de) 1974-06-27
FR2211728A1 (en) 1974-07-19
JPS4991384A (enrdf_load_stackoverflow) 1974-08-31
FR2211728B1 (enrdf_load_stackoverflow) 1976-06-25

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