GB1432659A - Bistable resistor - Google Patents
Bistable resistorInfo
- Publication number
- GB1432659A GB1432659A GB4951373A GB4951373A GB1432659A GB 1432659 A GB1432659 A GB 1432659A GB 4951373 A GB4951373 A GB 4951373A GB 4951373 A GB4951373 A GB 4951373A GB 1432659 A GB1432659 A GB 1432659A
- Authority
- GB
- United Kingdom
- Prior art keywords
- insulant
- substrate
- conductor
- semi
- stable
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 abstract 6
- 239000000758 substrate Substances 0.000 abstract 6
- 239000000463 material Substances 0.000 abstract 2
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 abstract 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 229910004298 SiO 2 Inorganic materials 0.000 abstract 1
- 239000002800 charge carrier Substances 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 238000013500 data storage Methods 0.000 abstract 1
- 238000010894 electron beam technology Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 229910052738 indium Inorganic materials 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 229910052745 lead Inorganic materials 0.000 abstract 1
- 239000011159 matrix material Substances 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002923 metal particle Substances 0.000 abstract 1
- 150000001455 metallic ions Chemical class 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- 229910052758 niobium Inorganic materials 0.000 abstract 1
- 229910052697 platinum Inorganic materials 0.000 abstract 1
- 229910052703 rhodium Inorganic materials 0.000 abstract 1
- 238000000926 separation method Methods 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C13/00—Resistors not provided for elsewhere
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/25—Multistable switching devices, e.g. memristors based on bulk electronic defects, e.g. trapping of electrons
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/823—Device geometry adapted for essentially horizontal current flow, e.g. bridge type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CH1874772A CH557081A (de) | 1972-12-22 | 1972-12-22 | Bistabiler widerstand mit von aeusserer energiezufuhr unabhaengigen zustaenden. |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1432659A true GB1432659A (en) | 1976-04-22 |
Family
ID=4435044
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB4951373A Expired GB1432659A (en) | 1972-12-22 | 1973-10-24 | Bistable resistor |
Country Status (7)
Country | Link |
---|---|
JP (1) | JPS5342512B2 (enrdf_load_stackoverflow) |
CA (1) | CA1012655A (enrdf_load_stackoverflow) |
CH (1) | CH557081A (enrdf_load_stackoverflow) |
DE (1) | DE2346569A1 (enrdf_load_stackoverflow) |
FR (1) | FR2211728A1 (enrdf_load_stackoverflow) |
GB (1) | GB1432659A (enrdf_load_stackoverflow) |
IT (1) | IT1001107B (enrdf_load_stackoverflow) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1986000470A1 (en) * | 1984-06-20 | 1986-01-16 | Poley W Leonhard | Method for fabricating electronic elements |
DE102005001460B4 (de) * | 2005-01-12 | 2010-01-14 | Qimonda Ag | Speichervorrichtung und Herstellungsverfahren |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2053606A5 (en) * | 1969-07-10 | 1971-04-16 | Corning Glass Works | Discontinuous thin film multi-stable resistor |
JPS492950B1 (enrdf_load_stackoverflow) * | 1969-08-21 | 1974-01-23 |
-
1972
- 1972-12-22 CH CH1874772A patent/CH557081A/xx not_active IP Right Cessation
-
1973
- 1973-09-14 CA CA181,067A patent/CA1012655A/en not_active Expired
- 1973-09-15 DE DE19732346569 patent/DE2346569A1/de active Pending
- 1973-10-24 GB GB4951373A patent/GB1432659A/en not_active Expired
- 1973-11-06 FR FR7340562A patent/FR2211728A1/fr active Granted
- 1973-11-28 IT IT41026/73A patent/IT1001107B/it active
- 1973-12-04 JP JP13491073A patent/JPS5342512B2/ja not_active Expired
Also Published As
Publication number | Publication date |
---|---|
CA1012655A (en) | 1977-06-21 |
CH557081A (de) | 1974-12-13 |
JPS5342512B2 (enrdf_load_stackoverflow) | 1978-11-11 |
DE2346569A1 (de) | 1974-06-27 |
FR2211728A1 (en) | 1974-07-19 |
JPS4991384A (enrdf_load_stackoverflow) | 1974-08-31 |
FR2211728B1 (enrdf_load_stackoverflow) | 1976-06-25 |
IT1001107B (it) | 1976-04-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US12100447B2 (en) | Self-selecting memory array with horizontal access lines | |
US11404637B2 (en) | Tapered cell profile and fabrication | |
US4146902A (en) | Irreversible semiconductor switching element and semiconductor memory device utilizing the same | |
US3699543A (en) | Combination film deposited switch unit and integrated circuits | |
AU742011B2 (en) | A read-only memory and read-only memory devices | |
US5289410A (en) | Non-volatile magnetic random access memory | |
US20040084714A1 (en) | Semiconductor memory device | |
JP2571208B2 (ja) | 低温トンネル・トランジスタ | |
US3781977A (en) | Semiconductor devices | |
US5811832A (en) | Non-volatile memory device | |
US4611308A (en) | Drain triggered N-channel non-volatile memory | |
US3986177A (en) | Semiconductor store element and stores formed by matrices of such elements | |
US3810128A (en) | Semiconductor switching and storage device | |
EP0005601A1 (en) | Semiconductor integrated memory circuit | |
GB1432659A (en) | Bistable resistor | |
GB1560749A (en) | Integrated programmable read-only memory | |
US6097627A (en) | Quantum random address memory with nano-diode mixer | |
US4412308A (en) | Programmable bipolar structures | |
US3382491A (en) | Mated-thin-film memory element | |
US4081794A (en) | Alloy junction archival memory plane and methods for writing data thereon | |
US4300279A (en) | Method for the manufacture of a monolithic, static memory cell | |
GB1385590A (en) | Data storage device | |
CA1226674A (en) | Semiconductor memory cell | |
US3751687A (en) | Integrated semiconductor circuit for data storage | |
US3577134A (en) | Method of operating a convertible memory system |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed [section 19, patents act 1949] | ||
PCNP | Patent ceased through non-payment of renewal fee |