DE2334258A1 - Verfahren zum dotieren von halbleitermaterialien - Google Patents
Verfahren zum dotieren von halbleitermaterialienInfo
- Publication number
- DE2334258A1 DE2334258A1 DE19732334258 DE2334258A DE2334258A1 DE 2334258 A1 DE2334258 A1 DE 2334258A1 DE 19732334258 DE19732334258 DE 19732334258 DE 2334258 A DE2334258 A DE 2334258A DE 2334258 A1 DE2334258 A1 DE 2334258A1
- Authority
- DE
- Germany
- Prior art keywords
- layer
- doped
- oxide layer
- diffusion
- doping
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
- H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
- H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
- H10P32/1408—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
- H10P32/141—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers the applied layer comprising oxides only
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
- H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
- H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
- H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/078—Impurity redistribution by oxidation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/118—Oxide films
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/914—Doping
- Y10S438/92—Controlling diffusion profile by oxidation
Landscapes
- Formation Of Insulating Films (AREA)
- Bipolar Transistors (AREA)
- Weting (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US00268987A US3808060A (en) | 1972-07-05 | 1972-07-05 | Method of doping semiconductor substrates |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2334258A1 true DE2334258A1 (de) | 1974-01-24 |
Family
ID=23025369
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19732334258 Pending DE2334258A1 (de) | 1972-07-05 | 1973-07-05 | Verfahren zum dotieren von halbleitermaterialien |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US3808060A (cg-RX-API-DMAC10.html) |
| JP (1) | JPS4965182A (cg-RX-API-DMAC10.html) |
| DE (1) | DE2334258A1 (cg-RX-API-DMAC10.html) |
| FR (1) | FR2191273A1 (cg-RX-API-DMAC10.html) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4974880A (cg-RX-API-DMAC10.html) * | 1972-11-20 | 1974-07-19 | ||
| US4006046A (en) * | 1975-04-21 | 1977-02-01 | Trw Inc. | Method for compensating for emitter-push effect in the fabrication of transistors |
| US4102715A (en) * | 1975-12-19 | 1978-07-25 | Matsushita Electric Industrial Co., Ltd. | Method for diffusing an impurity into a semiconductor body |
| JPS52153373A (en) * | 1976-06-15 | 1977-12-20 | Toshiba Corp | Preparation of semiconductor device |
| US4217375A (en) * | 1977-08-30 | 1980-08-12 | Bell Telephone Laboratories, Incorporated | Deposition of doped silicon oxide films |
| JPS5635464A (en) * | 1979-08-30 | 1981-04-08 | Toshiba Corp | Formation of npn type transistor |
| JPS59500296A (ja) * | 1982-02-26 | 1984-02-23 | ウエスタ−ン エレクトリツク カムパニ−，インコ−ポレ−テツド | 半導体デバイスの製造方法 |
| US4472212A (en) * | 1982-02-26 | 1984-09-18 | At&T Bell Laboratories | Method for fabricating a semiconductor device |
| CA1198226A (en) * | 1982-06-01 | 1985-12-17 | Eliezer Kinsbron | Method for manufacturing a semiconductor device |
| US4471524A (en) * | 1982-06-01 | 1984-09-18 | At&T Bell Laboratories | Method for manufacturing an insulated gate field effect transistor device |
| JPH0397224A (ja) * | 1989-09-11 | 1991-04-23 | Toshiba Corp | 半導体装置の製造方法 |
| US5494852A (en) * | 1993-07-28 | 1996-02-27 | Sony Electronics Inc. | High capacity semiconductor dopant deposition/oxidization process using a single furnace cycle |
| US5792280A (en) * | 1994-05-09 | 1998-08-11 | Sandia Corporation | Method for fabricating silicon cells |
| US6057216A (en) * | 1997-12-09 | 2000-05-02 | International Business Machines Corporation | Low temperature diffusion process for dopant concentration enhancement |
| JP4870908B2 (ja) * | 2004-01-23 | 2012-02-08 | エルピーダメモリ株式会社 | 半導体装置の製造方法 |
| KR100666564B1 (ko) * | 2004-08-04 | 2007-01-09 | 삼성에스디아이 주식회사 | 박막트랜지스터의 제조 방법 |
| TWI501292B (zh) * | 2012-09-26 | 2015-09-21 | 財團法人工業技術研究院 | 形成圖案化摻雜區的方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3575742A (en) * | 1964-11-09 | 1971-04-20 | Solitron Devices | Method of making a semiconductor device |
| US3450961A (en) * | 1966-05-26 | 1969-06-17 | Westinghouse Electric Corp | Semiconductor devices with a region having portions of differing depth and concentration |
| US3489622A (en) * | 1967-05-18 | 1970-01-13 | Ibm | Method of making high frequency transistors |
| JPS5415663B2 (cg-RX-API-DMAC10.html) * | 1971-12-29 | 1979-06-16 | ||
| JPS495595A (cg-RX-API-DMAC10.html) * | 1972-05-02 | 1974-01-18 | ||
| JPS551687B2 (cg-RX-API-DMAC10.html) * | 1972-07-06 | 1980-01-16 |
-
1972
- 1972-07-05 US US00268987A patent/US3808060A/en not_active Expired - Lifetime
-
1973
- 1973-06-05 JP JP48062656A patent/JPS4965182A/ja active Pending
- 1973-07-05 DE DE19732334258 patent/DE2334258A1/de active Pending
- 1973-07-05 FR FR7324802A patent/FR2191273A1/fr not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| JPS4965182A (cg-RX-API-DMAC10.html) | 1974-06-24 |
| US3808060A (en) | 1974-04-30 |
| FR2191273A1 (cg-RX-API-DMAC10.html) | 1974-02-01 |
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