DE2328471A1 - Transistor-halbleiterspeicher - Google Patents
Transistor-halbleiterspeicherInfo
- Publication number
- DE2328471A1 DE2328471A1 DE2328471A DE2328471A DE2328471A1 DE 2328471 A1 DE2328471 A1 DE 2328471A1 DE 2328471 A DE2328471 A DE 2328471A DE 2328471 A DE2328471 A DE 2328471A DE 2328471 A1 DE2328471 A1 DE 2328471A1
- Authority
- DE
- Germany
- Prior art keywords
- jfet
- cell
- transistor
- interface
- potential
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 16
- 230000015654 memory Effects 0.000 claims description 42
- 230000001066 destructive effect Effects 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 3
- 230000003247 decreasing effect Effects 0.000 claims 1
- 230000006386 memory function Effects 0.000 claims 1
- 238000012544 monitoring process Methods 0.000 claims 1
- 210000004027 cell Anatomy 0.000 description 69
- 239000000523 sample Substances 0.000 description 8
- 230000006870 function Effects 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 5
- 210000000352 storage cell Anatomy 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
- Dram (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US26141772A | 1972-06-09 | 1972-06-09 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2328471A1 true DE2328471A1 (de) | 1973-12-20 |
Family
ID=22993213
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2328471A Pending DE2328471A1 (de) | 1972-06-09 | 1973-06-05 | Transistor-halbleiterspeicher |
Country Status (12)
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2348984A1 (de) * | 1973-09-28 | 1975-04-24 | Siemens Ag | Anordnung mit feldeffekttransistoren |
| US3916222A (en) * | 1974-05-28 | 1975-10-28 | Nat Semiconductor Corp | Field effect transistor switching circuit |
| JPS5185062A (ja) * | 1975-01-24 | 1976-07-26 | Hitachi Ltd | Yunibaasarukatsupuringu |
| US4030083A (en) * | 1975-04-04 | 1977-06-14 | Bell Telephone Laboratories, Incorporated | Self-refreshed capacitor memory cell |
| JPS63500550A (ja) * | 1985-06-07 | 1988-02-25 | アナマ−ティック・リミテッド | 電気的デ−タ蓄積素子 |
| JP2783579B2 (ja) * | 1989-03-01 | 1998-08-06 | 株式会社東芝 | 半導体装置 |
| US5365477A (en) * | 1992-06-16 | 1994-11-15 | The United States Of America As Represented By The Secretary Of The Navy | Dynamic random access memory device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3394356A (en) * | 1965-04-19 | 1968-07-23 | Ibm | Random access memories employing threshold type devices |
| US3450967A (en) * | 1966-09-07 | 1969-06-17 | Vitautas Balio Tolutis | Selenium memory cell containing silver up to 2 atomic percent adjacent the rectifying contact |
-
1972
- 1972-06-09 US US00261417A patent/US3753248A/en not_active Expired - Lifetime
- 1972-12-19 CA CA159,350A patent/CA981793A/en not_active Expired
-
1973
- 1973-05-28 SE SE7307541A patent/SE382515B/xx unknown
- 1973-06-02 KR KR7300891A patent/KR780000459B1/ko not_active Expired
- 1973-06-05 DE DE2328471A patent/DE2328471A1/de active Pending
- 1973-06-07 BE BE132004A patent/BE800605A/xx unknown
- 1973-06-07 GB GB2718173A patent/GB1429846A/en not_active Expired
- 1973-06-08 NL NL7308042A patent/NL7308042A/xx not_active Application Discontinuation
- 1973-06-08 FR FR7321033A patent/FR2188238B1/fr not_active Expired
- 1973-06-08 JP JP48064010A patent/JPS4963350A/ja active Pending
- 1973-06-11 IT IT1014/73A patent/IT984672B/it active
-
1977
- 1977-09-08 HK HK458/77A patent/HK45877A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| JPS4963350A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1974-06-19 |
| FR2188238A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1974-01-18 |
| HK45877A (en) | 1977-09-16 |
| IT984672B (it) | 1974-11-20 |
| NL7308042A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1973-12-11 |
| GB1429846A (en) | 1976-03-31 |
| SE382515B (sv) | 1976-02-02 |
| US3753248A (en) | 1973-08-14 |
| BE800605A (fr) | 1973-10-01 |
| KR780000459B1 (en) | 1978-10-23 |
| CA981793A (en) | 1976-01-13 |
| FR2188238B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1976-09-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OHA | Expiration of time for request for examination |