JPS4963350A - - Google Patents

Info

Publication number
JPS4963350A
JPS4963350A JP48064010A JP6401073A JPS4963350A JP S4963350 A JPS4963350 A JP S4963350A JP 48064010 A JP48064010 A JP 48064010A JP 6401073 A JP6401073 A JP 6401073A JP S4963350 A JPS4963350 A JP S4963350A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP48064010A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4963350A publication Critical patent/JPS4963350A/ja
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
JP48064010A 1972-06-09 1973-06-08 Pending JPS4963350A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US26141772A 1972-06-09 1972-06-09

Publications (1)

Publication Number Publication Date
JPS4963350A true JPS4963350A (ja) 1974-06-19

Family

ID=22993213

Family Applications (1)

Application Number Title Priority Date Filing Date
JP48064010A Pending JPS4963350A (ja) 1972-06-09 1973-06-08

Country Status (12)

Country Link
US (1) US3753248A (ja)
JP (1) JPS4963350A (ja)
KR (1) KR780000459B1 (ja)
BE (1) BE800605A (ja)
CA (1) CA981793A (ja)
DE (1) DE2328471A1 (ja)
FR (1) FR2188238B1 (ja)
GB (1) GB1429846A (ja)
HK (1) HK45877A (ja)
IT (1) IT984672B (ja)
NL (1) NL7308042A (ja)
SE (1) SE382515B (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5185062A (ja) * 1975-01-24 1976-07-26 Hitachi Ltd Yunibaasarukatsupuringu

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2348984A1 (de) * 1973-09-28 1975-04-24 Siemens Ag Anordnung mit feldeffekttransistoren
US3916222A (en) * 1974-05-28 1975-10-28 Nat Semiconductor Corp Field effect transistor switching circuit
US4030083A (en) * 1975-04-04 1977-06-14 Bell Telephone Laboratories, Incorporated Self-refreshed capacitor memory cell
EP0225366A1 (en) * 1985-06-07 1987-06-16 Anamartic Limited Electrical data storage elements
JP2783579B2 (ja) * 1989-03-01 1998-08-06 株式会社東芝 半導体装置
US5365477A (en) * 1992-06-16 1994-11-15 The United States Of America As Represented By The Secretary Of The Navy Dynamic random access memory device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3354440A (en) * 1965-04-19 1967-11-21 Ibm Nondestructive memory array
US3450967A (en) * 1966-09-07 1969-06-17 Vitautas Balio Tolutis Selenium memory cell containing silver up to 2 atomic percent adjacent the rectifying contact

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5185062A (ja) * 1975-01-24 1976-07-26 Hitachi Ltd Yunibaasarukatsupuringu
JPS5431749B2 (ja) * 1975-01-24 1979-10-09

Also Published As

Publication number Publication date
BE800605A (fr) 1973-10-01
HK45877A (en) 1977-09-16
US3753248A (en) 1973-08-14
SE382515B (sv) 1976-02-02
KR780000459B1 (en) 1978-10-23
GB1429846A (en) 1976-03-31
FR2188238B1 (ja) 1976-09-17
DE2328471A1 (de) 1973-12-20
IT984672B (it) 1974-11-20
CA981793A (en) 1976-01-13
FR2188238A1 (ja) 1974-01-18
NL7308042A (ja) 1973-12-11

Similar Documents

Publication Publication Date Title
FR2204747A1 (ja)
JPS4884031A (ja)
JPS5334641B2 (ja)
FR2188238B1 (ja)
FR2191391A1 (ja)
JPS497613U (ja)
JPS4946813A (ja)
JPS4994797U (ja)
JPS5148922Y2 (ja)
JPS5110076Y2 (ja)
JPS4934609U (ja)
JPS4981964U (ja)
CS155900B1 (ja)
JPS5327380Y2 (ja)
JPS5044285Y2 (ja)
JPS4991628A (ja)
JPS4921796U (ja)
CS155642B1 (ja)
CS155630B1 (ja)
JPS4943809A (ja)
CS155021B1 (ja)
CS156817B1 (ja)
JPS4890389A (ja)
CS156196B1 (ja)
CS153392B1 (ja)