DE2327351A1 - Vorrichtung zum kontinuierlichen durchfuehren von gastransportreaktionen - Google Patents
Vorrichtung zum kontinuierlichen durchfuehren von gastransportreaktionenInfo
- Publication number
- DE2327351A1 DE2327351A1 DE2327351A DE2327351A DE2327351A1 DE 2327351 A1 DE2327351 A1 DE 2327351A1 DE 2327351 A DE2327351 A DE 2327351A DE 2327351 A DE2327351 A DE 2327351A DE 2327351 A1 DE2327351 A1 DE 2327351A1
- Authority
- DE
- Germany
- Prior art keywords
- gas
- reaction zone
- gases
- tube
- partition walls
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006243 chemical reaction Methods 0.000 title claims description 57
- 239000007789 gas Substances 0.000 claims description 88
- 238000005192 partition Methods 0.000 claims description 25
- 239000004065 semiconductor Substances 0.000 claims description 13
- 235000012431 wafers Nutrition 0.000 claims description 11
- 238000009792 diffusion process Methods 0.000 claims description 9
- 239000011261 inert gas Substances 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- 238000000034 method Methods 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 239000012495 reaction gas Substances 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000001419 dependent effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000002496 gastric effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000021 stimulant Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/10—Reaction chambers; Selection of materials therefor
- C30B31/106—Continuous processes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/16—Feed and outlet means for the gases; Modifying the flow of the gases
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/935—Gas flow control
Landscapes
- Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Drying Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US26391572A | 1972-06-19 | 1972-06-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2327351A1 true DE2327351A1 (de) | 1974-01-03 |
Family
ID=23003786
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2327351A Pending DE2327351A1 (de) | 1972-06-19 | 1973-05-29 | Vorrichtung zum kontinuierlichen durchfuehren von gastransportreaktionen |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US3790404A (enExample) |
| JP (1) | JPS5551331B2 (enExample) |
| DE (1) | DE2327351A1 (enExample) |
| FR (1) | FR2189874B1 (enExample) |
| GB (1) | GB1380511A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3237047A1 (de) * | 1981-10-07 | 1983-05-26 | Hitachi, Ltd., Tokyo | Waermebehandlungs-einrichtung |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2718184C2 (de) * | 1977-04-23 | 1982-10-14 | Philips Patentverwaltung Gmbh, 2000 Hamburg | Verfahren und Vorrichtung zum kontinuierlichen Beschichten eines langgestreckten Körpers |
| JPS59156996A (ja) * | 1983-02-23 | 1984-09-06 | Koito Mfg Co Ltd | 化合物結晶膜の製造方法とその装置 |
| US4504526A (en) * | 1983-09-26 | 1985-03-12 | Libbey-Owens-Ford Company | Apparatus and method for producing a laminar flow of constant velocity fluid along a substrate |
| US4807561A (en) * | 1986-05-19 | 1989-02-28 | Toshiba Machine Co., Ltd. | Semiconductor vapor phase growth apparatus |
| US5393563A (en) * | 1991-10-29 | 1995-02-28 | Ellis, Jr.; Frank B. | Formation of tin oxide films on glass substrates |
| JP3042659B2 (ja) * | 1993-07-06 | 2000-05-15 | 信越半導体株式会社 | 半導体ウエーハの酸化方法 |
| US5364007A (en) * | 1993-10-12 | 1994-11-15 | Air Products And Chemicals, Inc. | Inert gas delivery for reflow solder furnaces |
| US5563095A (en) * | 1994-12-01 | 1996-10-08 | Frey; Jeffrey | Method for manufacturing semiconductor devices |
| US5920078A (en) * | 1996-06-20 | 1999-07-06 | Frey; Jeffrey | Optoelectronic device using indirect-bandgap semiconductor material |
| DE102005045582B3 (de) * | 2005-09-23 | 2007-03-29 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Vorrichtung und Verfahren zur kontinuierlichen Gasphasenabscheidung unter Atmosphärendruck und deren Verwendung |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3623854A (en) * | 1968-08-28 | 1971-11-30 | Owens Illinois Inc | Vapor treatment of containers with finish air barrier |
| GB1307216A (en) * | 1969-04-23 | 1973-02-14 | Pilkington Brothers Ltd | Treating glass |
| US3688737A (en) * | 1969-11-04 | 1972-09-05 | Glass Container Mfg Inst Inc | Vapor deposition apparatus including air mask |
| BE760041A (fr) * | 1970-01-02 | 1971-05-17 | Ibm | Procede et appareil de transfert de masse gazeuse |
-
1972
- 1972-06-19 US US00263915A patent/US3790404A/en not_active Expired - Lifetime
-
1973
- 1973-05-02 GB GB2096073A patent/GB1380511A/en not_active Expired
- 1973-05-11 FR FR7317614A patent/FR2189874B1/fr not_active Expired
- 1973-05-16 JP JP5374673A patent/JPS5551331B2/ja not_active Expired
- 1973-05-29 DE DE2327351A patent/DE2327351A1/de active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3237047A1 (de) * | 1981-10-07 | 1983-05-26 | Hitachi, Ltd., Tokyo | Waermebehandlungs-einrichtung |
| US4468195A (en) * | 1981-10-07 | 1984-08-28 | Hitachi, Ltd. | Thermal treatment apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| US3790404A (en) | 1974-02-05 |
| FR2189874B1 (enExample) | 1977-09-02 |
| JPS5551331B2 (enExample) | 1980-12-23 |
| FR2189874A1 (enExample) | 1974-01-25 |
| JPS4944668A (enExample) | 1974-04-26 |
| GB1380511A (en) | 1975-01-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OHJ | Non-payment of the annual fee |