DE69515993T2 - CVD Reaktor zur Herstellung eines Leiterelements aus einem supraleitenden Oxyd - Google Patents

CVD Reaktor zur Herstellung eines Leiterelements aus einem supraleitenden Oxyd

Info

Publication number
DE69515993T2
DE69515993T2 DE69515993T DE69515993T DE69515993T2 DE 69515993 T2 DE69515993 T2 DE 69515993T2 DE 69515993 T DE69515993 T DE 69515993T DE 69515993 T DE69515993 T DE 69515993T DE 69515993 T2 DE69515993 T2 DE 69515993T2
Authority
DE
Germany
Prior art keywords
producing
conductor element
cvd reactor
superconducting oxide
superconducting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69515993T
Other languages
English (en)
Other versions
DE69515993D1 (de
Inventor
Kazunori Onabe
Nobuyuki Sadakata
Takashi Saito
Osamu Kohno
Taichi Yamaguchi
Yasuhiro Iijima
Shigeo Nagaya
Naoki Hirano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujikura Ltd
Chubu Electric Power Co Inc
Original Assignee
Fujikura Ltd
Chubu Electric Power Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujikura Ltd, Chubu Electric Power Co Inc filed Critical Fujikura Ltd
Application granted granted Critical
Publication of DE69515993D1 publication Critical patent/DE69515993D1/de
Publication of DE69515993T2 publication Critical patent/DE69515993T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/408—Oxides of copper or solid solutions thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0436—Processes for depositing or forming copper oxide superconductor layers by chemical vapour deposition [CVD]
    • H10N60/0464—Processes for depositing or forming copper oxide superconductor layers by chemical vapour deposition [CVD] by metalloorganic chemical vapour deposition [MOCVD]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02T—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO TRANSPORTATION
    • Y02T50/00—Aeronautics or air transport
    • Y02T50/60—Efficient propulsion technologies, e.g. for aircraft

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Vapour Deposition (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE69515993T 1995-05-22 1995-08-21 CVD Reaktor zur Herstellung eines Leiterelements aus einem supraleitenden Oxyd Expired - Lifetime DE69515993T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12289195A JP3354747B2 (ja) 1995-05-22 1995-05-22 Ｃｖｄ反応装置および酸化物超電導導体の製造方法

Publications (2)

Publication Number Publication Date
DE69515993D1 DE69515993D1 (de) 2000-05-04
DE69515993T2 true DE69515993T2 (de) 2001-01-11

Family

ID=14847197

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69515993T Expired - Lifetime DE69515993T2 (de) 1995-05-22 1995-08-21 CVD Reaktor zur Herstellung eines Leiterelements aus einem supraleitenden Oxyd

Country Status (4)

Country Link
US (1) US5908507A (de)
EP (1) EP0744474B1 (de)
JP (1) JP3354747B2 (de)
DE (1) DE69515993T2 (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6572706B1 (en) * 2000-06-19 2003-06-03 Simplus Systems Corporation Integrated precursor delivery system
US20040131773A1 (en) * 2000-08-07 2004-07-08 Venkat Selvamanickam Fabrication of high curret coated high temperature superconducting tapes
EP1271666A3 (de) * 2001-06-22 2006-01-25 Fujikura Ltd. Oxid-Supraleiterschicht und deren Herstellungsverfahren
US20040020430A1 (en) * 2002-07-26 2004-02-05 Metal Oxide Technologies, Inc. Method and apparatus for forming a thin film on a tape substrate
US20040023810A1 (en) * 2002-07-26 2004-02-05 Alex Ignatiev Superconductor material on a tape substrate
US8124170B1 (en) * 2004-01-23 2012-02-28 Metal Oxide Technologies, Inc Method for forming superconductor material on a tape substrate
US20040016401A1 (en) * 2002-07-26 2004-01-29 Metal Oxide Technologies, Inc. Method and apparatus for forming superconductor material on a tape substrate
US8512798B2 (en) * 2003-06-05 2013-08-20 Superpower, Inc. Plasma assisted metalorganic chemical vapor deposition (MOCVD) system
US20050065035A1 (en) * 2003-06-10 2005-03-24 Rupich Martin W. Superconductor methods and reactors
US8153281B2 (en) 2003-06-23 2012-04-10 Superpower, Inc. Metalorganic chemical vapor deposition (MOCVD) process and apparatus to produce multi-layer high-temperature superconducting (HTS) coated tape
US8119187B2 (en) * 2003-12-15 2012-02-21 Superpower, Inc. Chemical vapor deposition process using novel precursors
US8304019B1 (en) * 2004-02-19 2012-11-06 Nanosolar Inc. Roll-to-roll atomic layer deposition method and system
US7115304B2 (en) * 2004-02-19 2006-10-03 Nanosolar, Inc. High throughput surface treatment on coiled flexible substrates
US7387811B2 (en) * 2004-09-21 2008-06-17 Superpower, Inc. Method for manufacturing high temperature superconducting conductors using chemical vapor deposition (CVD)
JP4401992B2 (ja) 2005-03-25 2010-01-20 財団法人国際超電導産業技術研究センター テープ状酸化物超電導線の製造方法及びその製造装置
US20070148346A1 (en) * 2005-12-23 2007-06-28 General Electric Company Systems and methods for deposition of graded materials on continuously fed objects
JP5226809B2 (ja) * 2008-12-26 2013-07-03 キヤノンアネルバ株式会社 成膜装置およびそれを用いた基板の製造方法
KR101074810B1 (ko) * 2009-12-23 2011-10-19 삼성모바일디스플레이주식회사 캐리어 가스 공급 구조가 개선된 증착 장치 및 그것을 이용한 유기 발광 디스플레이 장치 제조방법
US20120180725A1 (en) * 2011-01-17 2012-07-19 Furukawa Electric Co., Ltd. Cvd apparatus
WO2013114588A1 (ja) * 2012-02-01 2013-08-08 古河電気工業株式会社 超電導線材の製造方法及び超電導線材
TW201408811A (zh) * 2012-08-28 2014-03-01 Univ St Johns 多流向原子層沈積系統
US10752991B2 (en) * 2017-02-06 2020-08-25 Applied Materials, Inc. Half-angle nozzle
CN108878326A (zh) * 2018-06-27 2018-11-23 德淮半导体有限公司 注入器及其包含注入器的工艺装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3785853A (en) * 1972-05-24 1974-01-15 Unicorp Inc Continuous deposition reactor
US4389970A (en) * 1981-03-16 1983-06-28 Energy Conversion Devices, Inc. Apparatus for regulating substrate temperature in a continuous plasma deposition process
US4732110A (en) * 1983-04-29 1988-03-22 Hughes Aircraft Company Inverted positive vertical flow chemical vapor deposition reactor chamber
US5273954A (en) * 1987-08-20 1993-12-28 Fukami Patent Office Method for forming superconducting ceramics elongated body
US4763601A (en) * 1987-09-02 1988-08-16 Nippon Steel Corporation Continuous composite coating apparatus for coating strip
US5034372A (en) * 1987-12-07 1991-07-23 Mitsubishi Denki Kabushiki Kaisha Plasma based method for production of superconductive oxide layers
JPH02295116A (ja) * 1989-05-10 1990-12-06 Mitsubishi Electric Corp 半導体製造装置
JP2822447B2 (ja) * 1989-05-19 1998-11-11 住友電気工業株式会社 酸化物超電導線材の製造方法および装置
US5356474A (en) * 1992-11-27 1994-10-18 General Electric Company Apparatus and method for making aligned Hi-Tc tape superconductors
JP3330166B2 (ja) * 1992-12-04 2002-09-30 東京エレクトロン株式会社 処理装置

Also Published As

Publication number Publication date
JPH08319569A (ja) 1996-12-03
EP0744474B1 (de) 2000-03-29
US5908507A (en) 1999-06-01
DE69515993D1 (de) 2000-05-04
EP0744474A1 (de) 1996-11-27
JP3354747B2 (ja) 2002-12-09

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