DE69515993D1 - CVD Reaktor zur Herstellung eines Leiterelements aus einem supraleitenden Oxyd - Google Patents
CVD Reaktor zur Herstellung eines Leiterelements aus einem supraleitenden OxydInfo
- Publication number
- DE69515993D1 DE69515993D1 DE69515993T DE69515993T DE69515993D1 DE 69515993 D1 DE69515993 D1 DE 69515993D1 DE 69515993 T DE69515993 T DE 69515993T DE 69515993 T DE69515993 T DE 69515993T DE 69515993 D1 DE69515993 D1 DE 69515993D1
- Authority
- DE
- Germany
- Prior art keywords
- producing
- conductor element
- cvd reactor
- superconducting oxide
- superconducting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004020 conductor Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/408—Oxides of copper or solid solutions thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
- C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
- H10N60/0436—Processes for depositing or forming copper oxide superconductor layers by chemical vapour deposition [CVD]
- H10N60/0464—Processes for depositing or forming copper oxide superconductor layers by chemical vapour deposition [CVD] by metalloorganic chemical vapour deposition [MOCVD]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02T—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO TRANSPORTATION
- Y02T50/00—Aeronautics or air transport
- Y02T50/60—Efficient propulsion technologies, e.g. for aircraft
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Vapour Deposition (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12289195A JP3354747B2 (ja) | 1995-05-22 | 1995-05-22 | Cvd反応装置および酸化物超電導導体の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69515993D1 true DE69515993D1 (de) | 2000-05-04 |
DE69515993T2 DE69515993T2 (de) | 2001-01-11 |
Family
ID=14847197
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69515993T Expired - Lifetime DE69515993T2 (de) | 1995-05-22 | 1995-08-21 | CVD Reaktor zur Herstellung eines Leiterelements aus einem supraleitenden Oxyd |
Country Status (4)
Country | Link |
---|---|
US (1) | US5908507A (de) |
EP (1) | EP0744474B1 (de) |
JP (1) | JP3354747B2 (de) |
DE (1) | DE69515993T2 (de) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6572706B1 (en) * | 2000-06-19 | 2003-06-03 | Simplus Systems Corporation | Integrated precursor delivery system |
AU2001253922A1 (en) * | 2000-08-07 | 2002-07-24 | Igc-Superpower, Llc | Fabrication of high current coated high temperature superconducting tapes |
US6743531B2 (en) * | 2001-06-22 | 2004-06-01 | Fujikura Ltd. | Oxide superconducting conductor and its production method |
US20040016401A1 (en) * | 2002-07-26 | 2004-01-29 | Metal Oxide Technologies, Inc. | Method and apparatus for forming superconductor material on a tape substrate |
US20040023810A1 (en) * | 2002-07-26 | 2004-02-05 | Alex Ignatiev | Superconductor material on a tape substrate |
US8124170B1 (en) * | 2004-01-23 | 2012-02-28 | Metal Oxide Technologies, Inc | Method for forming superconductor material on a tape substrate |
US20040020430A1 (en) * | 2002-07-26 | 2004-02-05 | Metal Oxide Technologies, Inc. | Method and apparatus for forming a thin film on a tape substrate |
US8512798B2 (en) | 2003-06-05 | 2013-08-20 | Superpower, Inc. | Plasma assisted metalorganic chemical vapor deposition (MOCVD) system |
US20050065035A1 (en) * | 2003-06-10 | 2005-03-24 | Rupich Martin W. | Superconductor methods and reactors |
US8153281B2 (en) | 2003-06-23 | 2012-04-10 | Superpower, Inc. | Metalorganic chemical vapor deposition (MOCVD) process and apparatus to produce multi-layer high-temperature superconducting (HTS) coated tape |
US8119187B2 (en) * | 2003-12-15 | 2012-02-21 | Superpower, Inc. | Chemical vapor deposition process using novel precursors |
US8304019B1 (en) * | 2004-02-19 | 2012-11-06 | Nanosolar Inc. | Roll-to-roll atomic layer deposition method and system |
US7115304B2 (en) * | 2004-02-19 | 2006-10-03 | Nanosolar, Inc. | High throughput surface treatment on coiled flexible substrates |
US7387811B2 (en) * | 2004-09-21 | 2008-06-17 | Superpower, Inc. | Method for manufacturing high temperature superconducting conductors using chemical vapor deposition (CVD) |
JP4401992B2 (ja) | 2005-03-25 | 2010-01-20 | 財団法人国際超電導産業技術研究センター | テープ状酸化物超電導線の製造方法及びその製造装置 |
US20070148346A1 (en) * | 2005-12-23 | 2007-06-28 | General Electric Company | Systems and methods for deposition of graded materials on continuously fed objects |
JP5226809B2 (ja) * | 2008-12-26 | 2013-07-03 | キヤノンアネルバ株式会社 | 成膜装置およびそれを用いた基板の製造方法 |
KR101074810B1 (ko) * | 2009-12-23 | 2011-10-19 | 삼성모바일디스플레이주식회사 | 캐리어 가스 공급 구조가 개선된 증착 장치 및 그것을 이용한 유기 발광 디스플레이 장치 제조방법 |
US20120180725A1 (en) * | 2011-01-17 | 2012-07-19 | Furukawa Electric Co., Ltd. | Cvd apparatus |
EP2800106A4 (de) * | 2012-02-01 | 2015-03-11 | Furukawa Electric Co Ltd | Verfahren zur herstellung eines superleitenden drahtmaterials und superleitendes drahtmaterial |
TW201408811A (zh) * | 2012-08-28 | 2014-03-01 | Univ St Johns | 多流向原子層沈積系統 |
US10752991B2 (en) * | 2017-02-06 | 2020-08-25 | Applied Materials, Inc. | Half-angle nozzle |
WO2019211280A2 (de) * | 2018-04-30 | 2019-11-07 | Aixtron Se | Vorrichtung zum beschichten eines substrates mit einer kohlenstoffhaltigen beschichtung |
CN108878326A (zh) * | 2018-06-27 | 2018-11-23 | 德淮半导体有限公司 | 注入器及其包含注入器的工艺装置 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3785853A (en) * | 1972-05-24 | 1974-01-15 | Unicorp Inc | Continuous deposition reactor |
US4389970A (en) * | 1981-03-16 | 1983-06-28 | Energy Conversion Devices, Inc. | Apparatus for regulating substrate temperature in a continuous plasma deposition process |
US4732110A (en) * | 1983-04-29 | 1988-03-22 | Hughes Aircraft Company | Inverted positive vertical flow chemical vapor deposition reactor chamber |
US5273954A (en) * | 1987-08-20 | 1993-12-28 | Fukami Patent Office | Method for forming superconducting ceramics elongated body |
US4763601A (en) * | 1987-09-02 | 1988-08-16 | Nippon Steel Corporation | Continuous composite coating apparatus for coating strip |
US5034372A (en) * | 1987-12-07 | 1991-07-23 | Mitsubishi Denki Kabushiki Kaisha | Plasma based method for production of superconductive oxide layers |
JPH02295116A (ja) * | 1989-05-10 | 1990-12-06 | Mitsubishi Electric Corp | 半導体製造装置 |
JP2822447B2 (ja) * | 1989-05-19 | 1998-11-11 | 住友電気工業株式会社 | 酸化物超電導線材の製造方法および装置 |
US5356474A (en) * | 1992-11-27 | 1994-10-18 | General Electric Company | Apparatus and method for making aligned Hi-Tc tape superconductors |
JP3330166B2 (ja) * | 1992-12-04 | 2002-09-30 | 東京エレクトロン株式会社 | 処理装置 |
-
1995
- 1995-05-22 JP JP12289195A patent/JP3354747B2/ja not_active Expired - Fee Related
- 1995-08-21 EP EP95401921A patent/EP0744474B1/de not_active Expired - Lifetime
- 1995-08-21 DE DE69515993T patent/DE69515993T2/de not_active Expired - Lifetime
-
1997
- 1997-07-07 US US08/889,178 patent/US5908507A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US5908507A (en) | 1999-06-01 |
EP0744474A1 (de) | 1996-11-27 |
JP3354747B2 (ja) | 2002-12-09 |
DE69515993T2 (de) | 2001-01-11 |
JPH08319569A (ja) | 1996-12-03 |
EP0744474B1 (de) | 2000-03-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |