DE2326005A1 - Verfahren zur bildung von halbleitervorrichtungen - Google Patents
Verfahren zur bildung von halbleitervorrichtungenInfo
- Publication number
- DE2326005A1 DE2326005A1 DE2326005A DE2326005A DE2326005A1 DE 2326005 A1 DE2326005 A1 DE 2326005A1 DE 2326005 A DE2326005 A DE 2326005A DE 2326005 A DE2326005 A DE 2326005A DE 2326005 A1 DE2326005 A1 DE 2326005A1
- Authority
- DE
- Germany
- Prior art keywords
- layer
- forming
- electrode
- active semiconductor
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 94
- 238000000034 method Methods 0.000 title claims description 23
- 239000000463 material Substances 0.000 claims description 103
- 239000000758 substrate Substances 0.000 claims description 52
- 239000011148 porous material Substances 0.000 claims description 19
- 239000012535 impurity Substances 0.000 claims description 17
- 238000005530 etching Methods 0.000 claims description 10
- 239000011810 insulating material Substances 0.000 claims description 5
- 238000011109 contamination Methods 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 description 10
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 229910052750 molybdenum Inorganic materials 0.000 description 8
- 239000011733 molybdenum Substances 0.000 description 8
- 239000004020 conductor Substances 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 230000000873 masking effect Effects 0.000 description 5
- 230000008569 process Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000010849 ion bombardment Methods 0.000 description 2
- 150000001247 metal acetylides Chemical class 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 150000003568 thioethers Chemical class 0.000 description 2
- 241000208140 Acer Species 0.000 description 1
- 241001124532 Bubalus depressicornis Species 0.000 description 1
- -1 Mo-Vybdäiacarbid Chemical compound 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- KSECJOPEZIAKMU-UHFFFAOYSA-N [S--].[S--].[S--].[S--].[S--].[V+5].[V+5] Chemical compound [S--].[S--].[S--].[S--].[S--].[V+5].[V+5] KSECJOPEZIAKMU-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000011819 refractory material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
- H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/061—Shaping switching materials
- H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/017—Clean surfaces
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/158—Sputtering
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Semiconductor Memories (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Static Random-Access Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US00264937A US3816197A (en) | 1969-10-17 | 1972-06-21 | Film deposited semiconductor devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2326005A1 true DE2326005A1 (de) | 1974-01-17 |
Family
ID=23008278
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2326005A Pending DE2326005A1 (de) | 1972-06-21 | 1973-05-22 | Verfahren zur bildung von halbleitervorrichtungen |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US3816197A (en:Method) |
| JP (1) | JPS4964384A (en:Method) |
| AU (1) | AU5680173A (en:Method) |
| BE (1) | BE800712A (en:Method) |
| CA (1) | CA976668A (en:Method) |
| DD (1) | DD104875A5 (en:Method) |
| DE (1) | DE2326005A1 (en:Method) |
| FR (1) | FR2189872B3 (en:Method) |
| IL (1) | IL42260A0 (en:Method) |
| IT (1) | IT988915B (en:Method) |
| NL (1) | NL7307471A (en:Method) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3956042A (en) * | 1974-11-07 | 1976-05-11 | Xerox Corporation | Selective etchants for thin film devices |
| US4833100A (en) * | 1985-12-12 | 1989-05-23 | Kozo Iizuka, Director-General Of Agency Of Industrial Science And Technology | Method for producing a silicon thin film by MBE using silicon beam precleaning |
| DE3805877A1 (de) * | 1988-02-25 | 1989-08-31 | Roland Man Druckmasch | Adressiervorrichtung fuer produkte, insbesondere fuer falzprodukte |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3326729A (en) * | 1963-08-20 | 1967-06-20 | Hughes Aircraft Co | Epitaxial method for the production of microcircuit components |
| US3271591A (en) * | 1963-09-20 | 1966-09-06 | Energy Conversion Devices Inc | Symmetrical current controlling device |
| US3597297A (en) * | 1968-06-25 | 1971-08-03 | Minnesota Mining & Mfg | Synthetic turf material and method of making same |
| JPS5522945A (en) * | 1978-08-09 | 1980-02-19 | Hitachi Ltd | Ink jet recording device |
-
1972
- 1972-06-21 US US00264937A patent/US3816197A/en not_active Expired - Lifetime
-
1973
- 1973-05-14 IL IL42260A patent/IL42260A0/xx unknown
- 1973-05-15 CA CA171,440A patent/CA976668A/en not_active Expired
- 1973-05-22 DE DE2326005A patent/DE2326005A1/de active Pending
- 1973-05-29 NL NL7307471A patent/NL7307471A/xx unknown
- 1973-06-04 IT IT25016/73A patent/IT988915B/it active
- 1973-06-08 BE BE132097A patent/BE800712A/xx unknown
- 1973-06-12 AU AU56801/73A patent/AU5680173A/en not_active Expired
- 1973-06-15 FR FR7321883A patent/FR2189872B3/fr not_active Expired
- 1973-06-18 DD DD171628A patent/DD104875A5/xx unknown
- 1973-06-21 JP JP48069302A patent/JPS4964384A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| FR2189872A1 (en:Method) | 1974-01-25 |
| JPS4964384A (en:Method) | 1974-06-21 |
| FR2189872B3 (en:Method) | 1976-06-11 |
| NL7307471A (en:Method) | 1973-12-27 |
| CA976668A (en) | 1975-10-21 |
| DD104875A5 (en:Method) | 1974-03-20 |
| AU5680173A (en) | 1974-12-12 |
| IT988915B (it) | 1975-04-30 |
| BE800712A (fr) | 1973-10-01 |
| US3816197A (en) | 1974-06-11 |
| IL42260A0 (en) | 1973-07-30 |
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