DE2323471C2 - Schaltung mit veränderbarem Widerstand - Google Patents
Schaltung mit veränderbarem WiderstandInfo
- Publication number
- DE2323471C2 DE2323471C2 DE19732323471 DE2323471A DE2323471C2 DE 2323471 C2 DE2323471 C2 DE 2323471C2 DE 19732323471 DE19732323471 DE 19732323471 DE 2323471 A DE2323471 A DE 2323471A DE 2323471 C2 DE2323471 C2 DE 2323471C2
- Authority
- DE
- Germany
- Prior art keywords
- drain
- source
- field effect
- insulating
- layer field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000003990 capacitor Substances 0.000 claims description 15
- 230000005669 field effect Effects 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 7
- 239000012535 impurity Substances 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000000969 carrier Substances 0.000 description 1
- 238000013016 damping Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000012886 linear function Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H11/00—Networks using active elements
- H03H11/02—Multiple-port networks
- H03H11/24—Frequency-independent attenuators
- H03H11/245—Frequency-independent attenuators using field-effect transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
- H01L27/0738—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors in combination with resistors only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/435—Resistive materials for field effect devices, e.g. resistive gate for MOSFET or MESFET
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G1/00—Details of arrangements for controlling amplification
- H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
- H03G1/0035—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using continuously variable impedance elements
- H03G1/007—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using continuously variable impedance elements using FET type devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Networks Using Active Elements (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4757872A JPS5323989B2 (ja) | 1972-05-13 | 1972-05-13 | |
| JP7298072U JPS4932537U (ja) | 1972-06-20 | 1972-06-20 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2323471A1 DE2323471A1 (de) | 1973-11-29 |
| DE2323471C2 true DE2323471C2 (de) | 1985-09-12 |
Family
ID=26387754
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19732323471 Expired DE2323471C2 (de) | 1972-05-13 | 1973-05-09 | Schaltung mit veränderbarem Widerstand |
Country Status (7)
| Country | Link |
|---|---|
| AT (1) | AT354518B (ja) |
| CA (1) | CA999061A (ja) |
| DE (1) | DE2323471C2 (ja) |
| FR (1) | FR2184815B1 (ja) |
| GB (1) | GB1431199A (ja) |
| IT (1) | IT989208B (ja) |
| NL (1) | NL7306701A (ja) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57196627A (en) * | 1981-05-29 | 1982-12-02 | Hitachi Ltd | Electronic circuit device |
| KR940005293B1 (ko) * | 1991-05-23 | 1994-06-15 | 삼성전자 주식회사 | 게이트와 드레인이 중첩된 모오스 트랜지스터의 제조방법 및 그 구조 |
| US10535651B2 (en) * | 2016-10-12 | 2020-01-14 | Mediatek Inc. | Impedance circuit with poly-resistor |
| US10510823B2 (en) * | 2016-10-12 | 2019-12-17 | Mediatek Inc. | Impedance circuit with poly-resistor |
| US10461702B2 (en) | 2017-04-19 | 2019-10-29 | Mediatek Inc. | Amplifier circuit having poly resistor with biased depletion region |
| EP3451398A1 (en) * | 2017-09-01 | 2019-03-06 | MediaTek Inc. | Impedance circuit with poly-resistor |
-
1973
- 1973-05-09 GB GB2208573A patent/GB1431199A/en not_active Expired
- 1973-05-09 DE DE19732323471 patent/DE2323471C2/de not_active Expired
- 1973-05-11 CA CA170,994A patent/CA999061A/en not_active Expired
- 1973-05-11 AT AT417673A patent/AT354518B/de not_active IP Right Cessation
- 1973-05-11 IT IT2398473A patent/IT989208B/it active
- 1973-05-14 NL NL7306701A patent/NL7306701A/xx not_active Application Discontinuation
- 1973-05-14 FR FR7317384A patent/FR2184815B1/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| NL7306701A (ja) | 1973-11-15 |
| GB1431199A (en) | 1976-04-07 |
| CA999061A (en) | 1976-10-26 |
| DE2323471A1 (de) | 1973-11-29 |
| ATA417673A (de) | 1979-06-15 |
| FR2184815A1 (ja) | 1973-12-28 |
| AT354518B (de) | 1979-01-10 |
| IT989208B (it) | 1975-05-20 |
| FR2184815B1 (ja) | 1977-09-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OD | Request for examination | ||
| D2 | Grant after examination | ||
| Q176 | The application caused the suspense of an application |
Ref document number: 2343206 Country of ref document: DE |
|
| 8364 | No opposition during term of opposition |