DE2316354A1 - Halbleiter-thyristor - Google Patents
Halbleiter-thyristorInfo
- Publication number
- DE2316354A1 DE2316354A1 DE19732316354 DE2316354A DE2316354A1 DE 2316354 A1 DE2316354 A1 DE 2316354A1 DE 19732316354 DE19732316354 DE 19732316354 DE 2316354 A DE2316354 A DE 2316354A DE 2316354 A1 DE2316354 A1 DE 2316354A1
- Authority
- DE
- Germany
- Prior art keywords
- area
- cathode
- emitter
- shunts
- gate electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 19
- 239000002800 charge carrier Substances 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 230000017525 heat dissipation Effects 0.000 description 3
- 238000010276 construction Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US24054972A | 1972-04-03 | 1972-04-03 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2316354A1 true DE2316354A1 (de) | 1973-10-18 |
Family
ID=22906996
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19737312377 Expired DE7312377U (de) | 1972-04-03 | 1973-04-02 | Halbleiter-thyristor |
| DE19732316354 Pending DE2316354A1 (de) | 1972-04-03 | 1973-04-02 | Halbleiter-thyristor |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19737312377 Expired DE7312377U (de) | 1972-04-03 | 1973-04-02 | Halbleiter-thyristor |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS4910682A (hu) |
| CH (1) | CH572668A5 (hu) |
| DE (2) | DE7312377U (hu) |
| FR (1) | FR2178931A1 (hu) |
| GB (1) | GB1425651A (hu) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4072980A (en) * | 1975-05-06 | 1978-02-07 | Siemens Aktiengesellschaft | Thyristor |
| DE2748528A1 (de) * | 1976-10-29 | 1978-05-03 | Westinghouse Electric Corp | Halbleiterschalter |
| US4352118A (en) * | 1979-03-02 | 1982-09-28 | Electric Power Research Institute, Inc. | Thyristor with segmented turn-on line for directing turn-on current |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS599967B2 (ja) * | 1978-07-14 | 1984-03-06 | ミツミ電機株式会社 | 磁気ヘッド |
| EP3175485A1 (en) | 2014-07-31 | 2017-06-07 | ABB Schweiz AG | Phase control thyristor |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE759754A (fr) * | 1969-12-02 | 1971-05-17 | Licentia Gmbh | Thyristor avec emetteur court-circuite a l'une des faces principales aumoins du disque de thyristor et procede de production du thyristor |
-
1973
- 1973-02-22 GB GB877073A patent/GB1425651A/en not_active Expired
- 1973-03-12 CH CH356973A patent/CH572668A5/xx not_active IP Right Cessation
- 1973-03-29 FR FR7311425A patent/FR2178931A1/fr not_active Withdrawn
- 1973-03-30 JP JP3656573A patent/JPS4910682A/ja active Pending
- 1973-04-02 DE DE19737312377 patent/DE7312377U/de not_active Expired
- 1973-04-02 DE DE19732316354 patent/DE2316354A1/de active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4072980A (en) * | 1975-05-06 | 1978-02-07 | Siemens Aktiengesellschaft | Thyristor |
| DE2748528A1 (de) * | 1976-10-29 | 1978-05-03 | Westinghouse Electric Corp | Halbleiterschalter |
| US4352118A (en) * | 1979-03-02 | 1982-09-28 | Electric Power Research Institute, Inc. | Thyristor with segmented turn-on line for directing turn-on current |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS4910682A (hu) | 1974-01-30 |
| CH572668A5 (hu) | 1976-02-13 |
| GB1425651A (en) | 1976-02-18 |
| FR2178931A1 (hu) | 1973-11-16 |
| DE7312377U (de) | 1973-08-02 |
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