DE2312162C3 - Halbleiterlaserplättchen und Verfahren zu seiner Herstellung - Google Patents

Halbleiterlaserplättchen und Verfahren zu seiner Herstellung

Info

Publication number
DE2312162C3
DE2312162C3 DE2312162A DE2312162A DE2312162C3 DE 2312162 C3 DE2312162 C3 DE 2312162C3 DE 2312162 A DE2312162 A DE 2312162A DE 2312162 A DE2312162 A DE 2312162A DE 2312162 C3 DE2312162 C3 DE 2312162C3
Authority
DE
Germany
Prior art keywords
layer
mesa
laser
strip
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2312162A
Other languages
German (de)
English (en)
Other versions
DE2312162A1 (de
DE2312162B2 (de
Inventor
Naoki Kokubunji Chinone
Ryoichi Ito
Satoshi Nakamura
Toshihisa Musashino Tsukada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of DE2312162A1 publication Critical patent/DE2312162A1/de
Publication of DE2312162B2 publication Critical patent/DE2312162B2/de
Application granted granted Critical
Publication of DE2312162C3 publication Critical patent/DE2312162C3/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10P50/646—

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Integrated Circuits (AREA)
DE2312162A 1972-03-13 1973-03-12 Halbleiterlaserplättchen und Verfahren zu seiner Herstellung Expired DE2312162C3 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2564472A JPS5321275B2 (OSRAM) 1972-03-13 1972-03-13

Publications (3)

Publication Number Publication Date
DE2312162A1 DE2312162A1 (de) 1973-10-04
DE2312162B2 DE2312162B2 (de) 1977-07-14
DE2312162C3 true DE2312162C3 (de) 1978-03-09

Family

ID=12171529

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2312162A Expired DE2312162C3 (de) 1972-03-13 1973-03-12 Halbleiterlaserplättchen und Verfahren zu seiner Herstellung

Country Status (4)

Country Link
JP (1) JPS5321275B2 (OSRAM)
DE (1) DE2312162C3 (OSRAM)
GB (1) GB1419695A (OSRAM)
NL (1) NL159536B (OSRAM)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1531238A (en) * 1975-01-09 1978-11-08 Standard Telephones Cables Ltd Injection lasers
NL176323C (nl) * 1975-03-11 1985-03-18 Philips Nv Halfgeleiderinrichting voor het opwekken van incoherente straling.
JPS606118B2 (ja) * 1975-03-12 1985-02-15 株式会社日立製作所 半導体レーザ装置
JPS5215280A (en) * 1975-07-28 1977-02-04 Nippon Telegr & Teleph Corp <Ntt> Cleavage semiconductor laser equipped with side surface light take-out waveguide
JPS5245296A (en) * 1975-10-07 1977-04-09 Nippon Telegr & Teleph Corp <Ntt> Semiconductive phototransmission pass and semiconductor emission devic e used it
DE2760112C2 (OSRAM) * 1976-07-02 1989-05-18 N.V. Philips' Gloeilampenfabrieken, Eindhoven, Nl
NL7607299A (nl) * 1976-07-02 1978-01-04 Philips Nv Injektielaser.
US4328508A (en) 1979-04-02 1982-05-04 Rca Corporation III-V Quaternary alloy photodiode
JPS5842283A (ja) * 1981-09-04 1983-03-11 Nippon Telegr & Teleph Corp <Ntt> 埋込み型半導体レ−ザの製法
JPS62157339A (ja) * 1986-11-28 1987-07-13 Hitachi Ltd 情報再生装置
CA2006597A1 (en) * 1988-12-26 1990-06-26 Kazuo Kogure Method for manufacturing compound semiconductor devices and a compound semiconductor device
US5359619A (en) * 1992-02-20 1994-10-25 Sumitomo Electric Industries, Ltd. Multi-beam semiconductor laser and method for producing the same
JP4189610B2 (ja) * 1998-05-08 2008-12-03 ソニー株式会社 光電変換素子およびその製造方法

Also Published As

Publication number Publication date
JPS4894378A (OSRAM) 1973-12-05
DE2312162A1 (de) 1973-10-04
GB1419695A (OSRAM) 1975-12-31
NL159536B (nl) 1979-02-15
JPS5321275B2 (OSRAM) 1978-07-01
DE2312162B2 (de) 1977-07-14
NL7303449A (OSRAM) 1973-09-17

Similar Documents

Publication Publication Date Title
DE3779775T2 (de) Halbleiterlaser mit streifenfoermiger mesa-wellenleiterstruktur und dessen herstellungsverfahren.
DE2347802C2 (de) Verfahren zur Herstellung eines dielektrischen optischen Wellenleiters, sowie die hiernach hergestellten optischen Wellenleiter
DE69836698T2 (de) Verbindungshalbleiterlaser
DE2312162C3 (de) Halbleiterlaserplättchen und Verfahren zu seiner Herstellung
DE68909632T2 (de) Halbleiterlaser-Vorrichtung und deren Herstellungsverfahren.
DE3007809C2 (de) Halbleiterlichtausstrahlungselement und Verfahren zu seiner Herstellung
DE68908646T2 (de) Halbleiterlaser.
DE2819843A1 (de) Lichtemittierende diode mit streifengeometrie sowie herstellungsverfahren hierfuer
DE2643503C3 (de) Verfahren zur Herstellung eines Injektionslasers
DE2120464B2 (de) Heterostruktur-Halbleiterdiode mit pn-übergang zur Verwendung als Injektionslaser
DE2165006B2 (de) Halbleiterlaser
DE69407354T2 (de) Vielfachhalbleiterlaser mit reduzierten Nebensprechkomponenten und Herstellungsverfahren
DE2608562C2 (OSRAM)
DE3686785T2 (de) Halbleiterlaservorrichtung mit verteilter rueckkopplung.
DE2822146A1 (de) Halbleiterlaser und verfahren zur herstellung eines halbleiterlasers
DE2701102C3 (de) Halbleiter-Injektionslaser
DE19514392A1 (de) Halbleiterlaservorrichtung
DE3688943T2 (de) Halbleiterlaservorrichtung.
DE2607708A1 (de) Laserdiode mit verteilter rueckkopplung
DE2236410B2 (de) Halbleiter-Injektionslaser
DE3714512C2 (OSRAM)
DE2556850C2 (de) Heteroübergangs-Diodenlaser
DE2447536C2 (de) Halbleiterlaser
DE10122063B4 (de) Oberflächenemittierende Halbleiterlaservorrichtung
DE2501344A1 (de) Halbleiterkoerper

Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)
8339 Ceased/non-payment of the annual fee