DE2311994C3 - Latenzbildspeicher - Google Patents

Latenzbildspeicher

Info

Publication number
DE2311994C3
DE2311994C3 DE2311994A DE2311994A DE2311994C3 DE 2311994 C3 DE2311994 C3 DE 2311994C3 DE 2311994 A DE2311994 A DE 2311994A DE 2311994 A DE2311994 A DE 2311994A DE 2311994 C3 DE2311994 C3 DE 2311994C3
Authority
DE
Germany
Prior art keywords
memory
read
cells
bit line
line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2311994A
Other languages
German (de)
English (en)
Other versions
DE2311994B2 (enExample
DE2311994A1 (de
Inventor
Irving Tze Poughkeepsie N.Y. Ho
Gerald Adian Fishkill N.Y. Maley
Hwa Nien Yorktown Heights N.Y. Yu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE2311994A1 publication Critical patent/DE2311994A1/de
Publication of DE2311994B2 publication Critical patent/DE2311994B2/de
Application granted granted Critical
Publication of DE2311994C3 publication Critical patent/DE2311994C3/de
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/35—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/20—Memory cell initialisation circuits, e.g. when powering up or down, memory clear, latent image memory
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
DE2311994A 1972-04-13 1973-03-10 Latenzbildspeicher Expired DE2311994C3 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US24379372A 1972-04-13 1972-04-13

Publications (3)

Publication Number Publication Date
DE2311994A1 DE2311994A1 (de) 1973-10-25
DE2311994B2 DE2311994B2 (enExample) 1980-07-31
DE2311994C3 true DE2311994C3 (de) 1981-03-26

Family

ID=22920156

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2311994A Expired DE2311994C3 (de) 1972-04-13 1973-03-10 Latenzbildspeicher

Country Status (7)

Country Link
US (1) US3755793A (enExample)
JP (1) JPS5311335B2 (enExample)
CA (1) CA996261A (enExample)
DE (1) DE2311994C3 (enExample)
FR (1) FR2179783B1 (enExample)
GB (1) GB1415220A (enExample)
IT (1) IT978832B (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3911464A (en) * 1973-05-29 1975-10-07 Ibm Nonvolatile semiconductor memory
US4028715A (en) * 1973-06-25 1977-06-07 Texas Instruments Incorporated Use of floating diffusion for low-noise electrical inputs in CCD's
US3898630A (en) * 1973-10-11 1975-08-05 Ibm High voltage integrated driver circuit
US3911560A (en) * 1974-02-25 1975-10-14 Fairchild Camera Instr Co Method for manufacturing a semiconductor device having self-aligned implanted barriers with narrow gaps between electrodes
JPS57658B2 (enExample) * 1974-04-16 1982-01-07
US3965368A (en) * 1974-10-24 1976-06-22 Texas Instruments Incorporated Technique for reduction of electrical input noise in charge coupled devices
US3967251A (en) * 1975-04-17 1976-06-29 Xerox Corporation User variable computer memory module
US3983544A (en) * 1975-08-25 1976-09-28 International Business Machines Corporation Split memory array sharing same sensing and bit decode circuitry
US4072978A (en) * 1975-09-29 1978-02-07 Texas Instruments Incorporated CCD input and node preset method
US4015247A (en) * 1975-12-22 1977-03-29 Baker Roger T Method for operating charge transfer memory cells
US4092736A (en) * 1976-07-06 1978-05-30 Roger Thomas Baker Three electrode dynamic semiconductor memory cell with coincident selection
JPS5746393A (en) * 1980-07-28 1982-03-16 Ibm Memory
US4380803A (en) * 1981-02-10 1983-04-19 Burroughs Corporation Read-only/read-write memory
US4388532A (en) * 1981-04-27 1983-06-14 Eastman Kodak Company Solid state image sensor with image sensing elements having charge coupled photocapacitors and a floating gate amplifier
US4418401A (en) * 1982-12-29 1983-11-29 Ibm Corporation Latent image ram cell
US4584669A (en) * 1984-02-27 1986-04-22 International Business Machines Corporation Memory cell with latent image capabilities
FR2624386B1 (fr) * 1987-12-09 1995-07-21 Salomon Sa Fixation de securite pour ski
US9202554B2 (en) 2014-03-13 2015-12-01 International Business Machines Corporation Methods and circuits for generating physically unclonable function

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3201764A (en) * 1961-11-30 1965-08-17 Carlyle V Parker Light controlled electronic matrix switch
US3387286A (en) * 1967-07-14 1968-06-04 Ibm Field-effect transistor memory
US3533089A (en) * 1969-05-16 1970-10-06 Shell Oil Co Single-rail mosfet memory with capacitive storage
US3618052A (en) * 1969-12-05 1971-11-02 Cogar Corp Bistable memory with predetermined turn-on state
US3662351A (en) * 1970-03-30 1972-05-09 Ibm Alterable-latent image monolithic memory
US3654499A (en) * 1970-06-24 1972-04-04 Bell Telephone Labor Inc Charge coupled memory with storage sites

Also Published As

Publication number Publication date
FR2179783A1 (enExample) 1973-11-23
JPS4911236A (enExample) 1974-01-31
CA996261A (en) 1976-08-31
FR2179783B1 (enExample) 1977-08-05
DE2311994B2 (enExample) 1980-07-31
US3755793A (en) 1973-08-28
JPS5311335B2 (enExample) 1978-04-20
GB1415220A (en) 1975-11-26
DE2311994A1 (de) 1973-10-25
IT978832B (it) 1974-09-20

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Legal Events

Date Code Title Description
OD Request for examination
C3 Grant after two publication steps (3rd publication)
8339 Ceased/non-payment of the annual fee