DE2304552A1 - Anordnung zur erzeugung elektromagnetischer wellen - Google Patents
Anordnung zur erzeugung elektromagnetischer wellenInfo
- Publication number
- DE2304552A1 DE2304552A1 DE2304552A DE2304552A DE2304552A1 DE 2304552 A1 DE2304552 A1 DE 2304552A1 DE 2304552 A DE2304552 A DE 2304552A DE 2304552 A DE2304552 A DE 2304552A DE 2304552 A1 DE2304552 A1 DE 2304552A1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor
- arrangement
- superstructure
- zones
- radiation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005855 radiation Effects 0.000 claims description 55
- 239000004065 semiconductor Substances 0.000 claims description 40
- 238000000034 method Methods 0.000 claims description 33
- 230000008569 process Effects 0.000 claims description 26
- 230000005684 electric field Effects 0.000 claims description 21
- 230000005670 electromagnetic radiation Effects 0.000 claims description 20
- 230000004044 response Effects 0.000 claims description 5
- 238000010521 absorption reaction Methods 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 2
- 230000035515 penetration Effects 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 13
- 229910052732 germanium Inorganic materials 0.000 description 11
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 11
- 230000003993 interaction Effects 0.000 description 8
- 229910045601 alloy Inorganic materials 0.000 description 6
- 239000000956 alloy Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000000737 periodic effect Effects 0.000 description 6
- 238000002156 mixing Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 238000001556 precipitation Methods 0.000 description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229910000676 Si alloy Inorganic materials 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- 238000005275 alloying Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910000967 As alloy Inorganic materials 0.000 description 1
- 229910000927 Ge alloy Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000002772 conduction electron Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 238000007323 disproportionation reaction Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000013316 zoning Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/353—Frequency conversion, i.e. wherein a light beam is generated with frequency components different from those of the incident light beams
- G02F1/3534—Three-wave interaction, e.g. sum-difference frequency generation
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Integrated Circuits (AREA)
- Semiconductor Lasers (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US25704472A | 1972-05-25 | 1972-05-25 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2304552A1 true DE2304552A1 (de) | 1973-12-06 |
Family
ID=22974666
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2304552A Pending DE2304552A1 (de) | 1972-05-25 | 1973-01-31 | Anordnung zur erzeugung elektromagnetischer wellen |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US3746879A (enExample) |
| JP (1) | JPS4929590A (enExample) |
| DE (1) | DE2304552A1 (enExample) |
| FR (1) | FR2185893B1 (enExample) |
| GB (1) | GB1417642A (enExample) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4011543A (en) * | 1976-02-20 | 1977-03-08 | Sperry Rand Corporation | Low crosstalk optical switch |
| JPS5329146A (en) * | 1976-08-31 | 1978-03-18 | Tokyo Optical | Antireflection film for infrared region |
| JPS5571647A (en) * | 1978-11-20 | 1980-05-29 | Hoya Corp | Phosphate type glass coating method |
| US4361814A (en) * | 1980-09-29 | 1982-11-30 | Rockwell International Corporation | Distributed optical parametric amplifier |
| US4549788A (en) * | 1983-01-03 | 1985-10-29 | At&T Bell Laboratories | Intensity of a light beam applied to a layered semiconductor structure controls the beam |
| US4528464A (en) * | 1983-02-28 | 1985-07-09 | At&T Bell Laboratories | Degenerate four-wave mixer using multiple quantum well structures |
| US4597638A (en) * | 1983-02-28 | 1986-07-01 | At&T Bell Laboratories | Nonlinear optical apparatus |
| US4863245A (en) * | 1984-02-28 | 1989-09-05 | Exxon Research And Engineering Company | Superlattice electrooptic devices |
| JPS62188295A (ja) * | 1986-02-13 | 1987-08-17 | Sharp Corp | 半導体レ−ザ素子 |
| JPS62264001A (ja) * | 1986-05-10 | 1987-11-17 | Asahi Optical Co Ltd | 光学製品の着色コ−ト膜 |
| US4786146A (en) * | 1987-02-11 | 1988-11-22 | Hughes Aircraft Company | Color sequential illumination system for a liquid crystal light valve |
| JPH07117674B2 (ja) * | 1987-03-16 | 1995-12-18 | 富士通株式会社 | 量子井戸型非線形光学薄膜 |
| JPH01168081A (ja) * | 1987-12-24 | 1989-07-03 | New Japan Radio Co Ltd | 直列動作型ガンダイオード |
| JPH0820656B2 (ja) * | 1988-05-16 | 1996-03-04 | 松下電器産業株式会社 | 第２高調波光発生装置 |
| US4896931A (en) * | 1988-08-18 | 1990-01-30 | North American Philips Corp. | Frequency doubling device |
| US5191630A (en) * | 1990-04-20 | 1993-03-02 | Nec Corporation | Nonlinear optical device for controlling a signal light by a control light |
| US5051617A (en) * | 1990-06-29 | 1991-09-24 | National Research Council Canada | Multilayer semiconductor waveguide device for sum frequency generation from contra-propagating beams |
| US5375138A (en) * | 1992-09-25 | 1994-12-20 | International Business Machines Corporation | Optical cavities for lasers |
| US6744553B1 (en) * | 2000-06-20 | 2004-06-01 | Xtera Communications, Inc. | System and method for converting a plurality of wavelengths |
| US6831774B2 (en) * | 2000-07-07 | 2004-12-14 | Nippon Telegraph And Telephone Corporation | Multi-wavelength generating method and apparatus based on flattening of optical spectrum |
| CA2352680C (en) * | 2000-07-07 | 2006-01-10 | Nippon Telegraph And Telephone Corporation | Multi-wavelength generating method and apparatus based on flattening of optical spectrum |
| EP1248143A3 (en) * | 2001-04-02 | 2004-10-20 | Nippon Telegraph and Telephone Corporation | Wavelength converter |
-
1972
- 1972-05-25 US US00257044A patent/US3746879A/en not_active Expired - Lifetime
-
1973
- 1973-01-17 GB GB236573A patent/GB1417642A/en not_active Expired
- 1973-01-23 FR FR7304194A patent/FR2185893B1/fr not_active Expired
- 1973-01-31 DE DE2304552A patent/DE2304552A1/de active Pending
- 1973-02-12 JP JP48016688A patent/JPS4929590A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| FR2185893A1 (enExample) | 1974-01-04 |
| US3746879A (en) | 1973-07-17 |
| GB1417642A (en) | 1975-12-10 |
| JPS4929590A (enExample) | 1974-03-16 |
| FR2185893B1 (enExample) | 1979-10-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OHJ | Non-payment of the annual fee |