DE2300754A1 - Thyristor - Google Patents

Thyristor

Info

Publication number
DE2300754A1
DE2300754A1 DE2300754A DE2300754A DE2300754A1 DE 2300754 A1 DE2300754 A1 DE 2300754A1 DE 2300754 A DE2300754 A DE 2300754A DE 2300754 A DE2300754 A DE 2300754A DE 2300754 A1 DE2300754 A1 DE 2300754A1
Authority
DE
Germany
Prior art keywords
electrode
emitter
zone
junction
thyristor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE2300754A
Other languages
German (de)
English (en)
Inventor
Peter Dipl Ing Dr Voss
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Priority to DE2300754A priority Critical patent/DE2300754A1/de
Priority to CH1709373A priority patent/CH566081A5/xx
Priority to FR7346081A priority patent/FR2213589B1/fr
Priority to JP744382A priority patent/JPS5725984B2/ja
Priority to IT19062/74A priority patent/IT1006717B/it
Priority to GB36674A priority patent/GB1417953A/en
Priority to SE7400173A priority patent/SE405527B/xx
Priority to NL7400189A priority patent/NL7400189A/xx
Publication of DE2300754A1 publication Critical patent/DE2300754A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/131—Thyristors having built-in components
    • H10D84/133—Thyristors having built-in components the built-in components being capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/211—Thyristors having built-in localised breakdown or breakover regions, e.g. self-protected against destructive spontaneous firing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/221—Thyristors having amplifying gate structures, e.g. cascade configurations

Landscapes

  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
DE2300754A 1973-01-08 1973-01-08 Thyristor Withdrawn DE2300754A1 (de)

Priority Applications (8)

Application Number Priority Date Filing Date Title
DE2300754A DE2300754A1 (de) 1973-01-08 1973-01-08 Thyristor
CH1709373A CH566081A5 (enrdf_load_stackoverflow) 1973-01-08 1973-12-06
FR7346081A FR2213589B1 (enrdf_load_stackoverflow) 1973-01-08 1973-12-21
JP744382A JPS5725984B2 (enrdf_load_stackoverflow) 1973-01-08 1973-12-25
IT19062/74A IT1006717B (it) 1973-01-08 1974-01-04 Tiristore
GB36674A GB1417953A (en) 1973-01-08 1974-01-04 Thyristors
SE7400173A SE405527B (sv) 1973-01-08 1974-01-07 Tyristor
NL7400189A NL7400189A (enrdf_load_stackoverflow) 1973-01-08 1974-01-07

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2300754A DE2300754A1 (de) 1973-01-08 1973-01-08 Thyristor

Publications (1)

Publication Number Publication Date
DE2300754A1 true DE2300754A1 (de) 1974-07-11

Family

ID=5868522

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2300754A Withdrawn DE2300754A1 (de) 1973-01-08 1973-01-08 Thyristor

Country Status (8)

Country Link
JP (1) JPS5725984B2 (enrdf_load_stackoverflow)
CH (1) CH566081A5 (enrdf_load_stackoverflow)
DE (1) DE2300754A1 (enrdf_load_stackoverflow)
FR (1) FR2213589B1 (enrdf_load_stackoverflow)
GB (1) GB1417953A (enrdf_load_stackoverflow)
IT (1) IT1006717B (enrdf_load_stackoverflow)
NL (1) NL7400189A (enrdf_load_stackoverflow)
SE (1) SE405527B (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4060826A (en) * 1975-08-29 1977-11-29 Siemens Aktiengesellschaft Light activated thyristor capable of activation by intensity radiation
US4282542A (en) * 1978-10-09 1981-08-04 Licentia Patent-Verwaltungs-G.M.B.H. Interference-potential-compensated thyristor comprising at least four zones of different type of conductivity
US4296427A (en) * 1976-05-31 1981-10-20 Tokyo Shibaura Electric Co., Ltd. Reverse conducting amplified gate thyristor with plate-like separator section
US4987087A (en) * 1988-05-19 1991-01-22 Siemens Aktiengesellschaft Process for manufacturing a thyristor with proton irradiation

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5660058A (en) * 1979-10-22 1981-05-23 Toshiba Corp Semiconductor device
US4261000A (en) * 1980-05-23 1981-04-07 General Electric Company High voltage semiconductor device having an improved dv/dt capability
EP0320738A3 (de) * 1987-12-17 1991-02-06 Siemens Aktiengesellschaft Überkopfzündfester Thyristor

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH436494A (de) * 1966-04-22 1967-05-31 Bbc Brown Boveri & Cie Steuerbares Halbleiterventil

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4060826A (en) * 1975-08-29 1977-11-29 Siemens Aktiengesellschaft Light activated thyristor capable of activation by intensity radiation
US4296427A (en) * 1976-05-31 1981-10-20 Tokyo Shibaura Electric Co., Ltd. Reverse conducting amplified gate thyristor with plate-like separator section
US4282542A (en) * 1978-10-09 1981-08-04 Licentia Patent-Verwaltungs-G.M.B.H. Interference-potential-compensated thyristor comprising at least four zones of different type of conductivity
US4987087A (en) * 1988-05-19 1991-01-22 Siemens Aktiengesellschaft Process for manufacturing a thyristor with proton irradiation

Also Published As

Publication number Publication date
SE405527B (sv) 1978-12-11
FR2213589A1 (enrdf_load_stackoverflow) 1974-08-02
NL7400189A (enrdf_load_stackoverflow) 1974-07-10
JPS49104580A (enrdf_load_stackoverflow) 1974-10-03
CH566081A5 (enrdf_load_stackoverflow) 1975-08-29
GB1417953A (en) 1975-12-17
FR2213589B1 (enrdf_load_stackoverflow) 1979-04-20
IT1006717B (it) 1976-10-20
JPS5725984B2 (enrdf_load_stackoverflow) 1982-06-02

Similar Documents

Publication Publication Date Title
DE69311627T2 (de) Schutzvorrichtung einer integrierten Schaltung gegen elektrostatische Entladungen
DE3011557C2 (de) Zweipoliger Überstromschutz
DE2716874C2 (de) Thyristor
DE3240564A1 (de) Steuerbares halbleiterschaltelement
DE69220330T2 (de) Halbleiterbauelement zum Schutz gegen Überspannungen
DE2231521C2 (de) Planares Halbleiterbauelement
DE2538549A1 (de) Mit licht steuerbarer thyristor
DE1216435B (de) Schaltbares Halbleiterbauelement mit vier Zonen
DE2944069A1 (de) Halbleiteranordnung
DE2021160A1 (de) Halbleiterschaltvorrichtung
DE2300754A1 (de) Thyristor
DE2913536A1 (de) Halbleiteranordnung
DE2625009A1 (de) Thyristor
DE2534703B2 (de) Abschaltbarer Thyristor
DE2809564C3 (de) Steuerbarer Halbleitergleichrichter
CH656485A5 (de) Halbleiterelement.
DE69426319T2 (de) Thyristor mit Hilfsemitterelektrode mit erhohtem Haltestrom
DE4439012A1 (de) Zweirichtungsthyristor
EP0880182B1 (de) Beidseitig steuerbarer Thyristor
DE2406866A1 (de) Halbleitersteuergleichrichter
DE2210386A1 (de) Thyristor
DE19947036C1 (de) Thyristoranordnung mit Freiwerdeschutz
DE2157091C3 (de) Thyristor mit integrierter Diode
DE3120124C2 (enrdf_load_stackoverflow)
DE3435751C2 (enrdf_load_stackoverflow)

Legal Events

Date Code Title Description
OD Request for examination
8139 Disposal/non-payment of the annual fee