JPS49104580A - - Google Patents

Info

Publication number
JPS49104580A
JPS49104580A JP49004382A JP438274A JPS49104580A JP S49104580 A JPS49104580 A JP S49104580A JP 49004382 A JP49004382 A JP 49004382A JP 438274 A JP438274 A JP 438274A JP S49104580 A JPS49104580 A JP S49104580A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP49004382A
Other languages
Japanese (ja)
Other versions
JPS5725984B2 (enrdf_load_stackoverflow
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS49104580A publication Critical patent/JPS49104580A/ja
Publication of JPS5725984B2 publication Critical patent/JPS5725984B2/ja
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/131Thyristors having built-in components
    • H10D84/133Thyristors having built-in components the built-in components being capacitors or resistors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00Thyristors
    • H10D18/211Thyristors having built-in localised breakdown or breakover regions, e.g. self-protected against destructive spontaneous firing
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00Thyristors
    • H10D18/221Thyristors having amplifying gate structures, e.g. cascade configurations

Landscapes

  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
JP744382A 1973-01-08 1973-12-25 Expired JPS5725984B2 (enrdf_load_stackoverflow)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2300754A DE2300754A1 (de) 1973-01-08 1973-01-08 Thyristor

Publications (2)

Publication Number Publication Date
JPS49104580A true JPS49104580A (enrdf_load_stackoverflow) 1974-10-03
JPS5725984B2 JPS5725984B2 (enrdf_load_stackoverflow) 1982-06-02

Family

ID=5868522

Family Applications (1)

Application Number Title Priority Date Filing Date
JP744382A Expired JPS5725984B2 (enrdf_load_stackoverflow) 1973-01-08 1973-12-25

Country Status (8)

Country Link
JP (1) JPS5725984B2 (enrdf_load_stackoverflow)
CH (1) CH566081A5 (enrdf_load_stackoverflow)
DE (1) DE2300754A1 (enrdf_load_stackoverflow)
FR (1) FR2213589B1 (enrdf_load_stackoverflow)
GB (1) GB1417953A (enrdf_load_stackoverflow)
IT (1) IT1006717B (enrdf_load_stackoverflow)
NL (1) NL7400189A (enrdf_load_stackoverflow)
SE (1) SE405527B (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5660058A (en) * 1979-10-22 1981-05-23 Toshiba Corp Semiconductor device
JPS5718361A (en) * 1980-05-23 1982-01-30 Gen Electric High voltage semiconductor device

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2538549C2 (de) * 1975-08-29 1985-06-13 Siemens AG, 1000 Berlin und 8000 München Mit Licht steuerbarer Thyristor
JPS52146570A (en) * 1976-05-31 1977-12-06 Toshiba Corp Reverse conducting thyristor
DE2843960A1 (de) * 1978-10-09 1980-04-10 Licentia Gmbh Stoerotentialkompensierter thyristor mit mindestens vier zonen unterschiedlichen leitfaehigkeittyps
EP0320738A3 (de) * 1987-12-17 1991-02-06 Siemens Aktiengesellschaft Überkopfzündfester Thyristor
EP0343369A1 (de) * 1988-05-19 1989-11-29 Siemens Aktiengesellschaft Verfahren zum Herstellen eines Thyristors

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3432733A (en) * 1966-04-22 1969-03-11 Bbc Brown Boveri & Cie Controllable semi-conductor element

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3432733A (en) * 1966-04-22 1969-03-11 Bbc Brown Boveri & Cie Controllable semi-conductor element

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5660058A (en) * 1979-10-22 1981-05-23 Toshiba Corp Semiconductor device
JPS5718361A (en) * 1980-05-23 1982-01-30 Gen Electric High voltage semiconductor device

Also Published As

Publication number Publication date
SE405527B (sv) 1978-12-11
FR2213589A1 (enrdf_load_stackoverflow) 1974-08-02
NL7400189A (enrdf_load_stackoverflow) 1974-07-10
CH566081A5 (enrdf_load_stackoverflow) 1975-08-29
DE2300754A1 (de) 1974-07-11
GB1417953A (en) 1975-12-17
FR2213589B1 (enrdf_load_stackoverflow) 1979-04-20
IT1006717B (it) 1976-10-20
JPS5725984B2 (enrdf_load_stackoverflow) 1982-06-02

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