GB1417953A - Thyristors - Google Patents

Thyristors

Info

Publication number
GB1417953A
GB1417953A GB36674A GB36674A GB1417953A GB 1417953 A GB1417953 A GB 1417953A GB 36674 A GB36674 A GB 36674A GB 36674 A GB36674 A GB 36674A GB 1417953 A GB1417953 A GB 1417953A
Authority
GB
United Kingdom
Prior art keywords
electrode
region
emitter
zone
main emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB36674A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of GB1417953A publication Critical patent/GB1417953A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
    • H01L29/7408—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a capacitor or a resistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7424—Thyristor-type devices, e.g. having four-zone regenerative action having a built-in localised breakdown/breakover region, e.g. self-protected against destructive spontaneous, e.g. voltage breakover, firing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7428—Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
  • Bipolar Transistors (AREA)

Abstract

1417953 Semi-conductor devices SIEMENS AG 4 Jan 1974 [8 Jan 1973] 00366/74 Heading H1K A thyristor comprises an annular main emitter 1 and an additional emitter zone 12, the additional zone having two apertures therein through one of which an ignition electrode 6 contacts the first base region 2, a further electrode 8 contacting the base 2 through the other aperture, the second base region 3 possessing a region 10, of low breakdown voltage, situated beneath the further electrode, and the structure enabling an overhead voltage to ignite the device without damage. The further electrode 8 is in electrical connection with the main emitter electrode 5 via either a line 9 or regions of the device. A resistor 20 in the line connection helps the current flow caused by overhead ignition to be dispersed to the main emitter 1, as shown by the arrows, so switching on the device. Normal ignition initially causes the auxiliary emitter zone around the electrode 6 to conduct, and this ignites the main emitter 1. The region 10 may be of lower resistivity, or may be thinner, than the remainder of region 2, to produce the lower breakdown voltage. In alternative embodiments, the further electrode may extend towards the main emitter electrode 5 through an aperture in both electrode 13 and zone 12, the material between electrodes 8 and 5 constituting the resistor 20. Reference has been directed by the Comptroller to Specification 1,360,326.
GB36674A 1973-01-08 1974-01-04 Thyristors Expired GB1417953A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19732300754 DE2300754A1 (en) 1973-01-08 1973-01-08 THYRISTOR

Publications (1)

Publication Number Publication Date
GB1417953A true GB1417953A (en) 1975-12-17

Family

ID=5868522

Family Applications (1)

Application Number Title Priority Date Filing Date
GB36674A Expired GB1417953A (en) 1973-01-08 1974-01-04 Thyristors

Country Status (8)

Country Link
JP (1) JPS5725984B2 (en)
CH (1) CH566081A5 (en)
DE (1) DE2300754A1 (en)
FR (1) FR2213589B1 (en)
GB (1) GB1417953A (en)
IT (1) IT1006717B (en)
NL (1) NL7400189A (en)
SE (1) SE405527B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4897706A (en) * 1987-12-17 1990-01-30 Siemens Akiengesellschaft Thyristor protected against breakover firing

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2538549C2 (en) * 1975-08-29 1985-06-13 Siemens AG, 1000 Berlin und 8000 München Thyristor controllable with light
JPS52146570A (en) * 1976-05-31 1977-12-06 Toshiba Corp Reverse conducting thyristor
DE2843960A1 (en) * 1978-10-09 1980-04-10 Licentia Gmbh STOEROTENTIAL COMPENSATED THYRISTOR WITH AT LEAST FOUR ZONES OF DIFFERENT CONDUCTIVITY TYPES
JPS5660058A (en) * 1979-10-22 1981-05-23 Toshiba Corp Semiconductor device
US4261000A (en) * 1980-05-23 1981-04-07 General Electric Company High voltage semiconductor device having an improved dv/dt capability
EP0343369A1 (en) * 1988-05-19 1989-11-29 Siemens Aktiengesellschaft Process for manufacturing a thyristor

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH436494A (en) * 1966-04-22 1967-05-31 Bbc Brown Boveri & Cie Controllable semiconductor valve

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4897706A (en) * 1987-12-17 1990-01-30 Siemens Akiengesellschaft Thyristor protected against breakover firing

Also Published As

Publication number Publication date
FR2213589B1 (en) 1979-04-20
IT1006717B (en) 1976-10-20
SE405527B (en) 1978-12-11
JPS49104580A (en) 1974-10-03
DE2300754A1 (en) 1974-07-11
CH566081A5 (en) 1975-08-29
NL7400189A (en) 1974-07-10
JPS5725984B2 (en) 1982-06-02
FR2213589A1 (en) 1974-08-02

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee