FR2213589A1 - - Google Patents

Info

Publication number
FR2213589A1
FR2213589A1 FR7346081A FR7346081A FR2213589A1 FR 2213589 A1 FR2213589 A1 FR 2213589A1 FR 7346081 A FR7346081 A FR 7346081A FR 7346081 A FR7346081 A FR 7346081A FR 2213589 A1 FR2213589 A1 FR 2213589A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7346081A
Other languages
French (fr)
Other versions
FR2213589B1 (enrdf_load_stackoverflow
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Siemens Corp
Original Assignee
Siemens AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG, Siemens Corp filed Critical Siemens AG
Publication of FR2213589A1 publication Critical patent/FR2213589A1/fr
Application granted granted Critical
Publication of FR2213589B1 publication Critical patent/FR2213589B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/131—Thyristors having built-in components
    • H10D84/133—Thyristors having built-in components the built-in components being capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/211—Thyristors having built-in localised breakdown or breakover regions, e.g. self-protected against destructive spontaneous firing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/221—Thyristors having amplifying gate structures, e.g. cascade configurations
FR7346081A 1973-01-08 1973-12-21 Expired FR2213589B1 (enrdf_load_stackoverflow)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2300754A DE2300754A1 (de) 1973-01-08 1973-01-08 Thyristor

Publications (2)

Publication Number Publication Date
FR2213589A1 true FR2213589A1 (enrdf_load_stackoverflow) 1974-08-02
FR2213589B1 FR2213589B1 (enrdf_load_stackoverflow) 1979-04-20

Family

ID=5868522

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7346081A Expired FR2213589B1 (enrdf_load_stackoverflow) 1973-01-08 1973-12-21

Country Status (8)

Country Link
JP (1) JPS5725984B2 (enrdf_load_stackoverflow)
CH (1) CH566081A5 (enrdf_load_stackoverflow)
DE (1) DE2300754A1 (enrdf_load_stackoverflow)
FR (1) FR2213589B1 (enrdf_load_stackoverflow)
GB (1) GB1417953A (enrdf_load_stackoverflow)
IT (1) IT1006717B (enrdf_load_stackoverflow)
NL (1) NL7400189A (enrdf_load_stackoverflow)
SE (1) SE405527B (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0320738A3 (de) * 1987-12-17 1991-02-06 Siemens Aktiengesellschaft Überkopfzündfester Thyristor

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2538549C2 (de) * 1975-08-29 1985-06-13 Siemens AG, 1000 Berlin und 8000 München Mit Licht steuerbarer Thyristor
JPS52146570A (en) * 1976-05-31 1977-12-06 Toshiba Corp Reverse conducting thyristor
DE2843960A1 (de) * 1978-10-09 1980-04-10 Licentia Gmbh Stoerotentialkompensierter thyristor mit mindestens vier zonen unterschiedlichen leitfaehigkeittyps
JPS5660058A (en) * 1979-10-22 1981-05-23 Toshiba Corp Semiconductor device
US4261000A (en) * 1980-05-23 1981-04-07 General Electric Company High voltage semiconductor device having an improved dv/dt capability
EP0343369A1 (de) * 1988-05-19 1989-11-29 Siemens Aktiengesellschaft Verfahren zum Herstellen eines Thyristors

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH436494A (de) * 1966-04-22 1967-05-31 Bbc Brown Boveri & Cie Steuerbares Halbleiterventil

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0320738A3 (de) * 1987-12-17 1991-02-06 Siemens Aktiengesellschaft Überkopfzündfester Thyristor

Also Published As

Publication number Publication date
SE405527B (sv) 1978-12-11
NL7400189A (enrdf_load_stackoverflow) 1974-07-10
JPS49104580A (enrdf_load_stackoverflow) 1974-10-03
CH566081A5 (enrdf_load_stackoverflow) 1975-08-29
DE2300754A1 (de) 1974-07-11
GB1417953A (en) 1975-12-17
FR2213589B1 (enrdf_load_stackoverflow) 1979-04-20
IT1006717B (it) 1976-10-20
JPS5725984B2 (enrdf_load_stackoverflow) 1982-06-02

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Legal Events

Date Code Title Description
ST Notification of lapse