DE2259237A1 - Bipolarer transistor mit materialverschiedenem halbleiteruebergang und verfahren zu seiner herstellung - Google Patents

Bipolarer transistor mit materialverschiedenem halbleiteruebergang und verfahren zu seiner herstellung

Info

Publication number
DE2259237A1
DE2259237A1 DE2259237A DE2259237A DE2259237A1 DE 2259237 A1 DE2259237 A1 DE 2259237A1 DE 2259237 A DE2259237 A DE 2259237A DE 2259237 A DE2259237 A DE 2259237A DE 2259237 A1 DE2259237 A1 DE 2259237A1
Authority
DE
Germany
Prior art keywords
epitaxial layer
layer
epitaxial
transistor according
doped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE2259237A
Other languages
German (de)
English (en)
Inventor
William Paul Dumke
Vincent Leo Rideout
Jerry Macpherson Woodall
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE2259237A1 publication Critical patent/DE2259237A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H10D10/821—Vertical heterojunction BJTs
    • H10P50/646—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/072—Heterojunctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/107—Melt

Landscapes

  • Bipolar Transistors (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
DE2259237A 1971-12-20 1972-12-04 Bipolarer transistor mit materialverschiedenem halbleiteruebergang und verfahren zu seiner herstellung Withdrawn DE2259237A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US20962071A 1971-12-20 1971-12-20

Publications (1)

Publication Number Publication Date
DE2259237A1 true DE2259237A1 (de) 1973-06-28

Family

ID=22779532

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2259237A Withdrawn DE2259237A1 (de) 1971-12-20 1972-12-04 Bipolarer transistor mit materialverschiedenem halbleiteruebergang und verfahren zu seiner herstellung

Country Status (5)

Country Link
US (1) US3780359A (cg-RX-API-DMAC10.html)
JP (1) JPS553829B2 (cg-RX-API-DMAC10.html)
DE (1) DE2259237A1 (cg-RX-API-DMAC10.html)
FR (1) FR2164634B1 (cg-RX-API-DMAC10.html)
GB (1) GB1404996A (cg-RX-API-DMAC10.html)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4943583A (cg-RX-API-DMAC10.html) * 1972-08-30 1974-04-24
AU7731575A (en) * 1974-01-18 1976-07-15 Nat Patent Dev Corp Heterojunction devices
CA1049127A (en) * 1974-03-05 1979-02-20 Kunio Itoh Semiconductor devices with improved heat radiation and current concentration
US3900863A (en) * 1974-05-13 1975-08-19 Westinghouse Electric Corp Light-emitting diode which generates light in three dimensions
RO68248A2 (ro) * 1974-11-08 1981-03-30 Institutul De Fizica,Ro Dispozitiv semiconductor cu efect de memorie
JPS5928992B2 (ja) * 1975-02-14 1984-07-17 日本電信電話株式会社 Ｍｏｓトランジスタおよびその製造方法
JPS5215262A (en) * 1975-07-28 1977-02-04 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device and its manufacturing method
US4075043A (en) * 1976-09-01 1978-02-21 Rockwell International Corporation Liquid phase epitaxy method of growing a junction between two semiconductive materials utilizing an interrupted growth technique
US4173763A (en) * 1977-06-09 1979-11-06 International Business Machines Corporation Heterojunction tunneling base transistor
US4160258A (en) * 1977-11-18 1979-07-03 Bell Telephone Laboratories, Incorporated Optically coupled linear bilateral transistor
US4179534A (en) * 1978-05-24 1979-12-18 Bell Telephone Laboratories, Incorporated Gold-tin-gold ohmic contact to N-type group III-V semiconductors
JPS5946103B2 (ja) * 1980-03-10 1984-11-10 日本電信電話株式会社 トランジスタ
JPS56133867A (en) * 1980-03-21 1981-10-20 Semiconductor Res Found Thermoelectric emission transistor
US4573064A (en) * 1981-11-02 1986-02-25 Texas Instruments Incorporated GaAs/GaAlAs Heterojunction bipolar integrated circuit devices
US4750025A (en) * 1981-12-04 1988-06-07 American Telephone And Telegraph Company, At&T Bell Laboratories Depletion stop transistor
US4459605A (en) * 1982-04-26 1984-07-10 Acrian, Inc. Vertical MESFET with guardring
US4586071A (en) * 1984-05-11 1986-04-29 International Business Machines Corporation Heterostructure bipolar transistor
JPS6144461A (ja) * 1984-08-08 1986-03-04 Matsushita Electric Ind Co Ltd ヘテロ接合トランジスタの製造方法
EP0206787B1 (en) * 1985-06-21 1991-12-18 Matsushita Electric Industrial Co., Ltd. Heterojunction bipolar transistor and method of manufacturing same
JPH07105487B2 (ja) * 1985-10-08 1995-11-13 富士通株式会社 半導体装置
GB8607822D0 (en) * 1986-03-27 1986-04-30 Plessey Co Plc Iii-v semiconductor devices
JPS63168049A (ja) * 1986-12-29 1988-07-12 Nec Corp ヘテロ接合バイポ−ラトランジスタおよびその製造方法
US4825265A (en) * 1987-09-04 1989-04-25 American Telephone And Telegraph Company At&T Bell Laboratories Transistor
US5027182A (en) * 1990-10-11 1991-06-25 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration High-gain AlGaAs/GaAs double heterojunction Darlington phototransistors for optical neural networks
EP0562272A3 (en) * 1992-03-23 1994-05-25 Texas Instruments Inc Microwave heterojunction bipolar transistors with emitters designed for high power applications and method for fabricating same
JPH0669227A (ja) * 1992-05-29 1994-03-11 Texas Instr Inc <Ti> 化合物半導体のヘテロ接合バイポーラトランジスタ及びその製造方法
US5672522A (en) * 1996-03-05 1997-09-30 Trw Inc. Method for making selective subcollector heterojunction bipolar transistors

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1489613A (cg-RX-API-DMAC10.html) * 1965-08-19 1967-11-13
US3380153A (en) * 1965-09-30 1968-04-30 Westinghouse Electric Corp Method of forming a semiconductor integrated circuit that includes a fast switching transistor
US3413533A (en) * 1966-03-28 1968-11-26 Varian Associates Heterojunction semiconductor devices employing carrier multiplication in a high gap ratio emitterbase heterojunction
US3473977A (en) * 1967-02-02 1969-10-21 Westinghouse Electric Corp Semiconductor fabrication technique permitting examination of epitaxially grown layers
JPS5141318B1 (cg-RX-API-DMAC10.html) * 1969-04-01 1976-11-09

Also Published As

Publication number Publication date
JPS4870483A (cg-RX-API-DMAC10.html) 1973-09-25
JPS553829B2 (cg-RX-API-DMAC10.html) 1980-01-26
US3780359A (en) 1973-12-18
FR2164634A1 (cg-RX-API-DMAC10.html) 1973-08-03
FR2164634B1 (cg-RX-API-DMAC10.html) 1976-06-04
GB1404996A (en) 1975-09-03

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Legal Events

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OD Request for examination
8139 Disposal/non-payment of the annual fee