RO68248A2 - Dispozitiv semiconductor cu efect de memorie - Google Patents

Dispozitiv semiconductor cu efect de memorie

Info

Publication number
RO68248A2
RO68248A2 RO7480464A RO8046474A RO68248A2 RO 68248 A2 RO68248 A2 RO 68248A2 RO 7480464 A RO7480464 A RO 7480464A RO 8046474 A RO8046474 A RO 8046474A RO 68248 A2 RO68248 A2 RO 68248A2
Authority
RO
Romania
Prior art keywords
semiconductor device
memory semiconductor
memory
semiconductor
Prior art date
Application number
RO7480464A
Other languages
English (en)
French (fr)
Inventor
Iulian B Petrescu-Prahova
Paul C Mihailovici
Cristian G Constantinescu
Original Assignee
Institutul De Fizica,Ro
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Institutul De Fizica,Ro filed Critical Institutul De Fizica,Ro
Priority to RO7480464A priority Critical patent/RO68248A2/ro
Priority to US05/576,137 priority patent/US4006366A/en
Publication of RO68248A2 publication Critical patent/RO68248A2/ro

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/222—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN heterojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
RO7480464A 1974-11-08 1974-11-08 Dispozitiv semiconductor cu efect de memorie RO68248A2 (ro)

Priority Applications (2)

Application Number Priority Date Filing Date Title
RO7480464A RO68248A2 (ro) 1974-11-08 1974-11-08 Dispozitiv semiconductor cu efect de memorie
US05/576,137 US4006366A (en) 1974-11-08 1975-05-09 Semiconductor device with memory effect

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
RO7480464A RO68248A2 (ro) 1974-11-08 1974-11-08 Dispozitiv semiconductor cu efect de memorie

Publications (1)

Publication Number Publication Date
RO68248A2 true RO68248A2 (ro) 1981-03-30

Family

ID=20094301

Family Applications (1)

Application Number Title Priority Date Filing Date
RO7480464A RO68248A2 (ro) 1974-11-08 1974-11-08 Dispozitiv semiconductor cu efect de memorie

Country Status (2)

Country Link
US (1) US4006366A (ro)
RO (1) RO68248A2 (ro)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2847451C2 (de) * 1978-11-02 1986-06-12 Telefunken electronic GmbH, 7100 Heilbronn Halbleiterbauelement und Verfahren zum Herstellen
US4396931A (en) * 1981-06-12 1983-08-02 International Business Machines Corporation Tunnel emitter upper valley transistor
US5153693A (en) * 1989-10-18 1992-10-06 At&T Bell Laboratories Circuit including bistable, bipolar transistor
US20110073887A1 (en) * 2009-09-25 2011-03-31 Alliance For Sustainable Energy, Llc Optoelectronic devices having a direct-band-gap base and an indirect-band-gap emitter

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3467896A (en) * 1966-03-28 1969-09-16 Varian Associates Heterojunctions and domain control in bulk negative conductivity semiconductors
US3780359A (en) * 1971-12-20 1973-12-18 Ibm Bipolar transistor with a heterojunction emitter and a method fabricating the same
US3821784A (en) * 1972-07-10 1974-06-28 Univ California Switching transistor with memory
US3927385A (en) * 1972-08-03 1975-12-16 Massachusetts Inst Technology Light emitting diode

Also Published As

Publication number Publication date
US4006366A (en) 1977-02-01

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