RO68248A2 - Dispozitiv semiconductor cu efect de memorie - Google Patents

Dispozitiv semiconductor cu efect de memorie

Info

Publication number
RO68248A2
RO68248A2 RO7480464A RO8046474A RO68248A2 RO 68248 A2 RO68248 A2 RO 68248A2 RO 7480464 A RO7480464 A RO 7480464A RO 8046474 A RO8046474 A RO 8046474A RO 68248 A2 RO68248 A2 RO 68248A2
Authority
RO
Romania
Prior art keywords
semiconductor device
memory effect
memory
effect
semiconductor
Prior art date
Application number
RO7480464A
Other languages
English (en)
French (fr)
Inventor
Iulian B Petrescu-Prahova
Paul C Mihailovici
Cristian G Constantinescu
Original Assignee
Institutul De Fizica,Ro
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Institutul De Fizica,Ro filed Critical Institutul De Fizica,Ro
Priority to RO7480464A priority Critical patent/RO68248A2/ro
Priority to US05/576,137 priority patent/US4006366A/en
Publication of RO68248A2 publication Critical patent/RO68248A2/ro

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
    • H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
    • H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Junction Field-Effect Transistors (AREA)
RO7480464A 1974-11-08 1974-11-08 Dispozitiv semiconductor cu efect de memorie RO68248A2 (ro)

Priority Applications (2)

Application Number Priority Date Filing Date Title
RO7480464A RO68248A2 (ro) 1974-11-08 1974-11-08 Dispozitiv semiconductor cu efect de memorie
US05/576,137 US4006366A (en) 1974-11-08 1975-05-09 Semiconductor device with memory effect

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
RO7480464A RO68248A2 (ro) 1974-11-08 1974-11-08 Dispozitiv semiconductor cu efect de memorie

Publications (1)

Publication Number Publication Date
RO68248A2 true RO68248A2 (ro) 1981-03-30

Family

ID=20094301

Family Applications (1)

Application Number Title Priority Date Filing Date
RO7480464A RO68248A2 (ro) 1974-11-08 1974-11-08 Dispozitiv semiconductor cu efect de memorie

Country Status (2)

Country Link
US (1) US4006366A (ro)
RO (1) RO68248A2 (ro)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2847451C2 (de) * 1978-11-02 1986-06-12 Telefunken electronic GmbH, 7100 Heilbronn Halbleiterbauelement und Verfahren zum Herstellen
US4396931A (en) * 1981-06-12 1983-08-02 International Business Machines Corporation Tunnel emitter upper valley transistor
US5153693A (en) * 1989-10-18 1992-10-06 At&T Bell Laboratories Circuit including bistable, bipolar transistor
US20110073887A1 (en) * 2009-09-25 2011-03-31 Alliance For Sustainable Energy, Llc Optoelectronic devices having a direct-band-gap base and an indirect-band-gap emitter

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3467896A (en) * 1966-03-28 1969-09-16 Varian Associates Heterojunctions and domain control in bulk negative conductivity semiconductors
US3780359A (en) * 1971-12-20 1973-12-18 Ibm Bipolar transistor with a heterojunction emitter and a method fabricating the same
US3821784A (en) * 1972-07-10 1974-06-28 Univ California Switching transistor with memory
US3927385A (en) * 1972-08-03 1975-12-16 Massachusetts Inst Technology Light emitting diode

Also Published As

Publication number Publication date
US4006366A (en) 1977-02-01

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