DE2257649C3 - Verfahren zum Bestimmen von fehlerhaften Isolierschichten auf Halbleitern - - Google Patents
Verfahren zum Bestimmen von fehlerhaften Isolierschichten auf Halbleitern -Info
- Publication number
- DE2257649C3 DE2257649C3 DE2257649A DE2257649A DE2257649C3 DE 2257649 C3 DE2257649 C3 DE 2257649C3 DE 2257649 A DE2257649 A DE 2257649A DE 2257649 A DE2257649 A DE 2257649A DE 2257649 C3 DE2257649 C3 DE 2257649C3
- Authority
- DE
- Germany
- Prior art keywords
- electric field
- semiconductor
- insulating layer
- field
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title claims description 37
- 238000000034 method Methods 0.000 title claims description 26
- 230000002950 deficient Effects 0.000 title description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 24
- 230000007547 defect Effects 0.000 claims description 20
- 230000005684 electric field Effects 0.000 claims description 18
- 235000012431 wafers Nutrition 0.000 claims description 13
- 235000012239 silicon dioxide Nutrition 0.000 claims description 12
- 239000000377 silicon dioxide Substances 0.000 claims description 12
- 230000005669 field effect Effects 0.000 claims description 10
- 239000011261 inert gas Substances 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 229910002601 GaN Inorganic materials 0.000 claims description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 2
- 239000004408 titanium dioxide Substances 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 239000010410 layer Substances 0.000 description 18
- 238000012360 testing method Methods 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052756 noble gas Inorganic materials 0.000 description 2
- 241000589614 Pseudomonas stutzeri Species 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000013100 final test Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 150000002835 noble gases Chemical class 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2637—Circuits therefor for testing other individual devices
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Formation Of Insulating Films (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US20338571A | 1971-11-30 | 1971-11-30 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE2257649A1 DE2257649A1 (de) | 1973-06-07 |
| DE2257649B2 DE2257649B2 (de) | 1980-06-12 |
| DE2257649C3 true DE2257649C3 (de) | 1981-02-19 |
Family
ID=22753767
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2257649A Expired DE2257649C3 (de) | 1971-11-30 | 1972-11-24 | Verfahren zum Bestimmen von fehlerhaften Isolierschichten auf Halbleitern - |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US3796955A (OSRAM) |
| JP (1) | JPS5236676B2 (OSRAM) |
| DE (1) | DE2257649C3 (OSRAM) |
| FR (1) | FR2161968B1 (OSRAM) |
| GB (1) | GB1380287A (OSRAM) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57164534A (en) * | 1981-04-03 | 1982-10-09 | Nec Corp | Screening method for semiconductor element |
| US4816753A (en) * | 1987-05-21 | 1989-03-28 | Advanced Research And Applications Corporation | Method for reliability testing of integrated circuits |
| US5498974A (en) * | 1994-12-30 | 1996-03-12 | International Business Machines Corporation | Contactless corona-oxide-semiconductor Q-V mobile charge measurement method and apparatus |
| AU6956196A (en) * | 1995-08-23 | 1997-03-27 | Gregory J. Gormley | Method and apparatus for testing and measuring for porosity and anomalies of nonconductive materials using electron beam |
| US6005409A (en) * | 1996-06-04 | 1999-12-21 | Advanced Micro Devices, Inc. | Detection of process-induced damage on transistors in real time |
| US6356097B1 (en) * | 1997-06-20 | 2002-03-12 | Applied Materials, Inc. | Capacitive probe for in situ measurement of wafer DC bias voltage |
| US6891359B2 (en) * | 2003-01-24 | 2005-05-10 | International Business Machines Corporation | Circuitry and methodology to establish correlation between gate dielectric test site reliability and product gate reliability |
-
1971
- 1971-11-30 US US00203385A patent/US3796955A/en not_active Expired - Lifetime
-
1972
- 1972-10-25 JP JP47106342A patent/JPS5236676B2/ja not_active Expired
- 1972-11-06 GB GB5111772A patent/GB1380287A/en not_active Expired
- 1972-11-08 FR FR7240417A patent/FR2161968B1/fr not_active Expired
- 1972-11-24 DE DE2257649A patent/DE2257649C3/de not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2161968B1 (OSRAM) | 1974-08-19 |
| US3796955A (en) | 1974-03-12 |
| DE2257649B2 (de) | 1980-06-12 |
| JPS5236676B2 (OSRAM) | 1977-09-17 |
| FR2161968A1 (OSRAM) | 1973-07-13 |
| DE2257649A1 (de) | 1973-06-07 |
| GB1380287A (en) | 1975-01-08 |
| JPS4864885A (OSRAM) | 1973-09-07 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OD | Request for examination | ||
| C3 | Grant after two publication steps (3rd publication) | ||
| 8339 | Ceased/non-payment of the annual fee |