DE2255210C3 - Datenspeicherschaltung - Google Patents

Datenspeicherschaltung

Info

Publication number
DE2255210C3
DE2255210C3 DE2255210A DE2255210A DE2255210C3 DE 2255210 C3 DE2255210 C3 DE 2255210C3 DE 2255210 A DE2255210 A DE 2255210A DE 2255210 A DE2255210 A DE 2255210A DE 2255210 C3 DE2255210 C3 DE 2255210C3
Authority
DE
Germany
Prior art keywords
transistor
voltage
field effect
volts
effect transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2255210A
Other languages
German (de)
English (en)
Other versions
DE2255210B2 (de
DE2255210A1 (de
Inventor
Edward Charles Hopewell N.J. Ross (V.St.A.)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of DE2255210A1 publication Critical patent/DE2255210A1/de
Publication of DE2255210B2 publication Critical patent/DE2255210B2/de
Application granted granted Critical
Publication of DE2255210C3 publication Critical patent/DE2255210C3/de
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/18—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
    • G11C19/182—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
    • G11C19/184—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Logic Circuits (AREA)
  • Shift Register Type Memory (AREA)
  • Read Only Memory (AREA)
DE2255210A 1971-11-22 1972-11-10 Datenspeicherschaltung Expired DE2255210C3 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US20069071A 1971-11-22 1971-11-22

Publications (3)

Publication Number Publication Date
DE2255210A1 DE2255210A1 (de) 1973-05-30
DE2255210B2 DE2255210B2 (de) 1974-07-25
DE2255210C3 true DE2255210C3 (de) 1975-03-13

Family

ID=22742768

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2255210A Expired DE2255210C3 (de) 1971-11-22 1972-11-10 Datenspeicherschaltung

Country Status (6)

Country Link
US (1) US3781570A (en:Method)
JP (1) JPS5112979B2 (en:Method)
CA (1) CA993105A (en:Method)
DE (1) DE2255210C3 (en:Method)
FR (1) FR2160969B1 (en:Method)
GB (1) GB1401487A (en:Method)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3774177A (en) * 1972-10-16 1973-11-20 Ncr Co Nonvolatile random access memory cell using an alterable threshold field effect write transistor
US3885196A (en) * 1972-11-30 1975-05-20 Us Army Pocketable direct current electroluminescent display device addressed by MOS or MNOS circuitry
DE2442131B2 (de) * 1974-09-03 1976-07-08 Siemens AG, 1000 Berlin und 8000 München Dynamisches ein-transistor-speicherelement
US4870302A (en) * 1984-03-12 1989-09-26 Xilinx, Inc. Configurable electrical circuit having configurable logic elements and configurable interconnects
USRE34363E (en) 1984-03-12 1993-08-31 Xilinx, Inc. Configurable electrical circuit having configurable logic elements and configurable interconnects
EP0204034B1 (en) * 1985-04-17 1994-11-09 Xilinx, Inc. Configurable logic array
KR101154338B1 (ko) * 2006-02-15 2012-06-13 삼성전자주식회사 쉬프트 레지스터와, 이를 갖는 스캔 구동 회로 및 표시장치
CN101515431B (zh) * 2008-02-22 2011-01-19 财团法人工业技术研究院 栅极驱动器用的平移寄存器

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3573498A (en) * 1967-11-24 1971-04-06 Rca Corp Counter or shift register stage having both static and dynamic storage circuits

Also Published As

Publication number Publication date
DE2255210B2 (de) 1974-07-25
US3781570A (en) 1973-12-25
FR2160969A1 (en:Method) 1973-07-06
JPS4863649A (en:Method) 1973-09-04
DE2255210A1 (de) 1973-05-30
GB1401487A (en) 1975-07-16
CA993105A (en) 1976-07-13
JPS5112979B2 (en:Method) 1976-04-23
FR2160969B1 (en:Method) 1976-10-29

Similar Documents

Publication Publication Date Title
DE2544974C3 (de) Schaltkreis zur Realisierung logischer Funktionen
DE1280924B (de) Bistabile Schaltung
DE1028617B (de) Bistabile Kippschaltung mit wenigstens einem Transistor
CH620557A5 (en:Method)
DE2233286A1 (de) Schaltungsanordnung zur datenuebertragung
DE2222521B2 (de) N-stufiger Ringzähler
DE1810498C3 (de) Signalübertragungsstufe mit einer Speicheranordnung
DE1067618B (de) Mehrstufige Anordnung zur Speicherung und Stellenverschiebung in Rechenmaschinen
DE2707967A1 (de) Schaltung zur erzeugung einer binaer abgestuften folge elektrischer signale
DE2816980A1 (de) Fet-treiberschaltung mit kurzen schaltzeichen
DE2255210C3 (de) Datenspeicherschaltung
DE1474388A1 (de) Speicheranordnung mit Feldeffekttransistoren
DE3237778A1 (de) Dynamisches schieberegister
DE2754987C2 (de) Halbleiter-Speichervorrichtung
DE2415098A1 (de) Ausschnittdetektor
DE2743450A1 (de) Sperrbare zaehlerstufe
DE2616477A1 (de) Halbleiterschaltung
DE2314015C3 (de) Signalverstärker
DE2435454A1 (de) Dynamischer binaerzaehler
DE2419064C2 (de) Analoginverter
DE2450882A1 (de) Komplementaere mos-logische schaltung
DE2734008C3 (de) Schaltungsanordnung zur Verminderung der am Ausgangsanschluß einer Informationsignalquelle auftretenden positiven Rauscheffekte
EP0058243A2 (de) Integrierte digitale Halbleiterschaltung
DE1462502A1 (de) Logische Schaltungen mit Feldeffekttransistoren
DE3014529C2 (en:Method)

Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)
E77 Valid patent as to the heymanns-index 1977
8339 Ceased/non-payment of the annual fee