DE2255123B2 - Verfahren zur herstellung eines anodenkoerpers fuer einen kondensator - Google Patents
Verfahren zur herstellung eines anodenkoerpers fuer einen kondensatorInfo
- Publication number
- DE2255123B2 DE2255123B2 DE19722255123 DE2255123A DE2255123B2 DE 2255123 B2 DE2255123 B2 DE 2255123B2 DE 19722255123 DE19722255123 DE 19722255123 DE 2255123 A DE2255123 A DE 2255123A DE 2255123 B2 DE2255123 B2 DE 2255123B2
- Authority
- DE
- Germany
- Prior art keywords
- anode body
- film
- forming metal
- layer
- conductive part
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 239000003990 capacitor Substances 0.000 title claims description 17
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 238000000034 method Methods 0.000 claims description 35
- 229910052751 metal Inorganic materials 0.000 claims description 27
- 239000002184 metal Substances 0.000 claims description 27
- 239000007921 spray Substances 0.000 claims description 26
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 11
- 239000000843 powder Substances 0.000 claims description 10
- 229910052715 tantalum Inorganic materials 0.000 claims description 10
- 239000003792 electrolyte Substances 0.000 claims description 7
- 239000002245 particle Substances 0.000 claims description 7
- 238000005488 sandblasting Methods 0.000 claims description 5
- 238000005507 spraying Methods 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 4
- 239000007784 solid electrolyte Substances 0.000 claims 1
- 239000004020 conductor Substances 0.000 description 21
- 239000002390 adhesive tape Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000007788 roughening Methods 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- MIVBAHRSNUNMPP-UHFFFAOYSA-N manganese(2+);dinitrate Chemical compound [Mn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MIVBAHRSNUNMPP-UHFFFAOYSA-N 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- LNSPFAOULBTYBI-UHFFFAOYSA-N [O].C#C Chemical compound [O].C#C LNSPFAOULBTYBI-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- SWLVFNYSXGMGBS-UHFFFAOYSA-N ammonium bromide Chemical compound [NH4+].[Br-] SWLVFNYSXGMGBS-UHFFFAOYSA-N 0.000 description 1
- 238000000889 atomisation Methods 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- -1 halogen acids Chemical class 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 210000000056 organ Anatomy 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000009718 spray deposition Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/0029—Processes of manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/042—Electrodes or formation of dielectric layers thereon characterised by the material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US19830671A | 1971-11-12 | 1971-11-12 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2255123A1 DE2255123A1 (de) | 1973-05-17 |
| DE2255123B2 true DE2255123B2 (de) | 1976-04-08 |
Family
ID=22732828
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19722255123 Ceased DE2255123B2 (de) | 1971-11-12 | 1972-11-10 | Verfahren zur herstellung eines anodenkoerpers fuer einen kondensator |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS565053B2 (enExample) |
| CA (1) | CA970846A (enExample) |
| DE (1) | DE2255123B2 (enExample) |
| FR (1) | FR2159449B1 (enExample) |
| GB (1) | GB1417999A (enExample) |
| IT (1) | IT975704B (enExample) |
| NL (1) | NL7215101A (enExample) |
-
1972
- 1972-11-08 NL NL7215101A patent/NL7215101A/xx not_active Application Discontinuation
- 1972-11-10 CA CA156,196A patent/CA970846A/en not_active Expired
- 1972-11-10 IT IT7054672A patent/IT975704B/it active
- 1972-11-10 DE DE19722255123 patent/DE2255123B2/de not_active Ceased
- 1972-11-10 JP JP11217072A patent/JPS565053B2/ja not_active Expired
- 1972-11-10 FR FR7239874A patent/FR2159449B1/fr not_active Expired
- 1972-11-10 GB GB5209172A patent/GB1417999A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2159449B1 (enExample) | 1976-10-29 |
| JPS565053B2 (enExample) | 1981-02-03 |
| NL7215101A (enExample) | 1973-05-15 |
| JPS4861955A (enExample) | 1973-08-30 |
| FR2159449A1 (enExample) | 1973-06-22 |
| DE2255123A1 (de) | 1973-05-17 |
| CA970846A (en) | 1975-07-08 |
| IT975704B (it) | 1974-08-10 |
| GB1417999A (en) | 1975-12-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE69835717T2 (de) | Ultraschallbeschichtetes Substrat zur Verwendung in einem Kondensator und Herstellungsverfahren | |
| DE69430842T2 (de) | Kondensator | |
| DE2264943B2 (de) | Mehrlagiger Schaltungsaufbau und Verfahren zur Herstellung desselben | |
| DE2806395C2 (de) | Festelektrolyt-Kondensator | |
| DE1215260B (de) | Verfahren zur Herstellung von Trockenelektrolytkondensatoren | |
| DE3029171A1 (de) | Verfahren zur herstellung von poroesen metallfilmen | |
| DE69936281T2 (de) | Verfahren zur Verbesserung der elektrischen Leitfähigkeit von Metallen, Metalllegierungen und Metalloxiden | |
| DE3230879C2 (enExample) | ||
| DE69126656T2 (de) | Substrat mit verbesserter Oberflächemorphologie mittels schmelzflüssigen Spritzens | |
| EP0350895B1 (de) | Ventilmetall/Platinverbundelektrode | |
| DE2422157A1 (de) | Verfahren zur glassubstratsaeuberung | |
| DE1589727C3 (de) | Elektrolytkondensator und Verfahren zu dessen Herstellung | |
| DE2406085A1 (de) | Verfahren zur herstellung von verbundkoerpern und elektrolytische zellen mit derartigen verbundkoerpern | |
| DE1771399A1 (de) | Duenne Elektroden fuer Brennstoffelemente und Verfahren zu ihrer Herstellung | |
| DE3122526C2 (enExample) | ||
| DE2261217A1 (de) | Verfahren zur herstellung von gasentladungs-anzeige- oder speichervorrichtungen | |
| DE2255123B2 (de) | Verfahren zur herstellung eines anodenkoerpers fuer einen kondensator | |
| DE2645414C2 (de) | Titananoden für die elektrolytische Gewinnung von Mangandioxid, sowie ein Verfahren zur Herstellung dieser Anoden | |
| DE1242282B (de) | Verfahren zur Herstellung eines aus Metall- und Isolierstoffschichten bestehenden Traegers fuer gedruckte Schaltungen | |
| EP0975826A2 (de) | Verfahren zum elektrolytischen beschichten von metallischen oder nichtmetallischen endlosprodukten und vorrichtung zur durchführung des verfahrens | |
| DE2819475C2 (de) | Verfahren zur elektrolytische Gewinnung von Zinn aus zinnhaltigen Sekundärrohstoffen und Elektrolyseur zur Durchführung dieses Verfahrens | |
| US4164066A (en) | Fabrication of anodes by plasma spray deposition | |
| DE1127480B (de) | Verfahren zur Herstellung eines Tantalkondensators mit einer formierten dielektrischen Schicht und Halbleiterschichten | |
| DE2414744C2 (de) | Verfahren zur Herstellung eines stabilisierten Supraleiters | |
| DE1141720B (de) | Verfahren zur Herstellung von elektrischen Kondensatoren mit dielektrischer Oxydschicht |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| BHV | Refusal |