DE224887C - - Google Patents

Info

Publication number
DE224887C
DE224887C DENDAT224887D DE224887DA DE224887C DE 224887 C DE224887 C DE 224887C DE NDAT224887 D DENDAT224887 D DE NDAT224887D DE 224887D A DE224887D A DE 224887DA DE 224887 C DE224887 C DE 224887C
Authority
DE
Germany
Prior art keywords
drum
lever
axis
tongue
cylinder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DENDAT224887D
Other languages
German (de)
English (en)
Publication of DE224887C publication Critical patent/DE224887C/de
Active legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B9/00—Exposure-making shutters; Diaphragms
    • G03B9/58—Means for varying duration of "open" period of shutter

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Control Devices (AREA)
DENDAT224887D Active DE224887C (cs)

Publications (1)

Publication Number Publication Date
DE224887C true DE224887C (cs)

Family

ID=485585

Family Applications (1)

Application Number Title Priority Date Filing Date
DENDAT224887D Active DE224887C (cs)

Country Status (1)

Country Link
DE (1) DE224887C (cs)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5373804A (en) * 1989-04-05 1994-12-20 Nippon Steel Corporation Single silicon crystal having low OSF density induced by oxidation and method for production thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5373804A (en) * 1989-04-05 1994-12-20 Nippon Steel Corporation Single silicon crystal having low OSF density induced by oxidation and method for production thereof

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