DE2245422A1 - Informationsspeicher- und uebertragungsvorrichtung - Google Patents

Informationsspeicher- und uebertragungsvorrichtung

Info

Publication number
DE2245422A1
DE2245422A1 DE2245422A DE2245422A DE2245422A1 DE 2245422 A1 DE2245422 A1 DE 2245422A1 DE 2245422 A DE2245422 A DE 2245422A DE 2245422 A DE2245422 A DE 2245422A DE 2245422 A1 DE2245422 A1 DE 2245422A1
Authority
DE
Germany
Prior art keywords
layer
insulating layer
charge
gate electrodes
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE2245422A
Other languages
German (de)
English (en)
Inventor
Shuichi Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of DE2245422A1 publication Critical patent/DE2245422A1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/472—Surface-channel CCD
    • H10D44/474—Two-phase CCD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Semiconductor Memories (AREA)
DE2245422A 1971-09-15 1972-09-15 Informationsspeicher- und uebertragungsvorrichtung Pending DE2245422A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1971083994U JPS5255987Y2 (enExample) 1971-09-15 1971-09-15

Publications (1)

Publication Number Publication Date
DE2245422A1 true DE2245422A1 (de) 1973-03-22

Family

ID=13818070

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2245422A Pending DE2245422A1 (de) 1971-09-15 1972-09-15 Informationsspeicher- und uebertragungsvorrichtung

Country Status (7)

Country Link
JP (1) JPS5255987Y2 (enExample)
CA (1) CA1023469A (enExample)
DE (1) DE2245422A1 (enExample)
FR (1) FR2153055B1 (enExample)
GB (1) GB1408892A (enExample)
IT (1) IT967514B (enExample)
NL (1) NL7212580A (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5411673B2 (enExample) * 1971-11-29 1979-05-16
JPS5760469Y2 (enExample) * 1978-06-16 1982-12-23
EP0069478A3 (en) * 1981-07-01 1983-10-05 The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and Metal-insulator-semiconductor devices
JPS5935472A (ja) * 1982-08-23 1984-02-27 Toshiba Corp 電荷転送デバイス
JPS6080272A (ja) * 1983-10-07 1985-05-08 Canon Inc 電荷転送素子
JP3635681B2 (ja) * 1994-07-15 2005-04-06 ソニー株式会社 バイアス回路の調整方法、電荷転送装置、及び電荷検出装置とその調整方法

Also Published As

Publication number Publication date
IT967514B (it) 1974-03-11
CA1023469A (en) 1977-12-27
NL7212580A (enExample) 1973-03-19
JPS4841158U (enExample) 1973-05-25
GB1408892A (en) 1975-10-08
JPS5255987Y2 (enExample) 1977-12-17
FR2153055B1 (enExample) 1976-01-23
FR2153055A1 (enExample) 1973-04-27

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