DE2240277A1 - Ladungsverschiebeanordnung - Google Patents

Ladungsverschiebeanordnung

Info

Publication number
DE2240277A1
DE2240277A1 DE2240277A DE2240277A DE2240277A1 DE 2240277 A1 DE2240277 A1 DE 2240277A1 DE 2240277 A DE2240277 A DE 2240277A DE 2240277 A DE2240277 A DE 2240277A DE 2240277 A1 DE2240277 A1 DE 2240277A1
Authority
DE
Germany
Prior art keywords
electrodes
charge
shifting arrangement
areas
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE2240277A
Other languages
German (de)
English (en)
Inventor
Karl-Ulrich Dr Stein
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Priority to DE2240277A priority Critical patent/DE2240277A1/de
Priority to GB3309173A priority patent/GB1432987A/en
Priority to CH1082273A priority patent/CH560467A5/xx
Priority to IT27654/73A priority patent/IT992874B/it
Priority to CA178,752A priority patent/CA982691A/en
Priority to FR7329668A priority patent/FR2196522A1/fr
Priority to NL7311205A priority patent/NL7311205A/xx
Priority to BE134558A priority patent/BE803589A/xx
Priority to LU68231A priority patent/LU68231A1/xx
Priority to JP48091366A priority patent/JPS4960483A/ja
Publication of DE2240277A1 publication Critical patent/DE2240277A1/de
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00Charge transfer devices
    • H10D44/40Charge-coupled devices [CCD]
    • H10D44/45Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/472Surface-channel CCD
    • H10D44/476Three-phase CCD
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C19/00Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Semiconductor Memories (AREA)
DE2240277A 1972-08-16 1972-08-16 Ladungsverschiebeanordnung Pending DE2240277A1 (de)

Priority Applications (10)

Application Number Priority Date Filing Date Title
DE2240277A DE2240277A1 (de) 1972-08-16 1972-08-16 Ladungsverschiebeanordnung
GB3309173A GB1432987A (en) 1972-08-16 1973-07-11 Charge-coupled arrangements
CH1082273A CH560467A5 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1972-08-16 1973-07-25
IT27654/73A IT992874B (it) 1972-08-16 1973-08-08 Dispositivo elettrico a spostamento di carica
CA178,752A CA982691A (en) 1972-08-16 1973-08-14 Charge coupled device with doped interelectrode spaces
FR7329668A FR2196522A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1972-08-16 1973-08-14
NL7311205A NL7311205A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1972-08-16 1973-08-14
BE134558A BE803589A (fr) 1972-08-16 1973-08-14 Dispositif a deplacement de charges
LU68231A LU68231A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1972-08-16 1973-08-14
JP48091366A JPS4960483A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1972-08-16 1973-08-16

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2240277A DE2240277A1 (de) 1972-08-16 1972-08-16 Ladungsverschiebeanordnung

Publications (1)

Publication Number Publication Date
DE2240277A1 true DE2240277A1 (de) 1974-03-14

Family

ID=5853711

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2240277A Pending DE2240277A1 (de) 1972-08-16 1972-08-16 Ladungsverschiebeanordnung

Country Status (10)

Country Link
JP (1) JPS4960483A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
BE (1) BE803589A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CA (1) CA982691A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CH (1) CH560467A5 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE2240277A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
FR (1) FR2196522A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB1432987A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
IT (1) IT992874B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
LU (1) LU68231A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
NL (1) NL7311205A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Also Published As

Publication number Publication date
FR2196522A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1974-03-15
IT992874B (it) 1975-09-30
CH560467A5 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1975-03-27
CA982691A (en) 1976-01-27
NL7311205A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1974-02-19
JPS4960483A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1974-06-12
BE803589A (fr) 1974-02-14
GB1432987A (en) 1976-04-22
LU68231A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1973-10-23

Similar Documents

Publication Publication Date Title
DE2409472C3 (de) Elektrisch löschbares Halbleiterspeicherelement mit einem Doppelgate-Isolierschicht-FET
DE2600337C2 (de) Halbleiterspeicheranordnung
DE60034328T2 (de) Elektrostatisch gesteuerter tunneleffekt-transistor
DE2657643A1 (de) Halbleiteranordnung fuer ein speicherelement
DE2916884A1 (de) Programmierbare halbleiterspeicherzelle
DE69123950T2 (de) SOI-Feldeffekttransistor und dessen Herstellungsverfahren
DE10353387A1 (de) Leistungstransistoranordnung und Verfahren zu deren Herstellung
DE2107022A1 (de) Informationsspeicher-Baueinheit
DE2834759C2 (de) Schutzeinrichtung für die isolierte Gate-Elektrode eines MOS-Halbleiterbauelements
DE2432352C3 (de) MNOS-Halbleiterspeicherelement
DE2201028C3 (de) Verfahren zum Betrieb eines Feldeffekttransistors und Feldeffekttransistor zur Ausübung dieses Verfahrens
DE2606254A1 (de) Leitung zum transport einer ladung
DE3926474C2 (de) Permanent-Speicherzellen-Anordnung
DE2926417A1 (de) Dynamische halbleiterspeicherzelle und verfahren zu ihrer herstellung
DE2451364C2 (de) Digital steuerbarer MOS-Feldeffektkondensator
DE2613096A1 (de) Halbleiteranordnung
DE2641302A1 (de) N-kanal mis-fet in esfi-technik
DE2051623A1 (de) Steuerbare raumladungsbegrenzte Impedanzeinnchtung fur integrierte Schaltungen
DE2240277A1 (de) Ladungsverschiebeanordnung
DE2727279A1 (de) Feldeffekttransistor und verfahren zu dessen herstellung
DE2944937A1 (de) Halbleiterbauelement
DE2216060A1 (de) Ladungsgekoppelte Baueinheit mit tiefgelegtem Kanal
DE2630388A1 (de) Ladungsgekoppelte verschiebevorrichtung und verfahren zu ihrem betrieb
DE2418582C3 (de) MNOS-Transistor, insbesondere MNOS-Transistor mit kurzer Kanalzone, für kurze Einschreibzeiten
DE2303916A1 (de) Integrierte schaltung mit feldeffekttransistoren

Legal Events

Date Code Title Description
OHJ Non-payment of the annual fee