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Publication of JPS4960483ApublicationCriticalpatent/JPS4960483A/ja
H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
H10D44/00—Charge transfer devices
H10D44/40—Charge-coupled devices [CCD]
H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes
H10D44/472—Surface-channel CCD
H10D44/476—Three-phase CCD
G—PHYSICS
G11—INFORMATION STORAGE
G11C—STATIC STORES
G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]