Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Siemens Corp
Original Assignee
Siemens AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG, Siemens CorpfiledCriticalSiemens AG
Publication of FR2196522A1publicationCriticalpatent/FR2196522A1/fr
H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
H10D44/00—Charge transfer devices
H10D44/40—Charge-coupled devices [CCD]
H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes
H10D44/472—Surface-channel CCD
H10D44/476—Three-phase CCD
G—PHYSICS
G11—INFORMATION STORAGE
G11C—STATIC STORES
G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]