DE2232902A1 - Magnetische granat-einkristallschicht - Google Patents
Magnetische granat-einkristallschichtInfo
- Publication number
- DE2232902A1 DE2232902A1 DE19722232902 DE2232902A DE2232902A1 DE 2232902 A1 DE2232902 A1 DE 2232902A1 DE 19722232902 DE19722232902 DE 19722232902 DE 2232902 A DE2232902 A DE 2232902A DE 2232902 A1 DE2232902 A1 DE 2232902A1
- Authority
- DE
- Germany
- Prior art keywords
- garnet
- magnetic
- substrate
- lanthanide
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002223 garnet Substances 0.000 title claims description 63
- 230000005291 magnetic effect Effects 0.000 title claims description 59
- 239000000758 substrate Substances 0.000 claims description 68
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical group [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 38
- 239000000203 mixture Substances 0.000 claims description 35
- 229910052747 lanthanoid Inorganic materials 0.000 claims description 25
- 150000002602 lanthanoids Chemical class 0.000 claims description 25
- 230000005415 magnetization Effects 0.000 claims description 21
- 239000013078 crystal Substances 0.000 claims description 17
- 229910052742 iron Inorganic materials 0.000 claims description 17
- 239000000126 substance Substances 0.000 claims description 12
- 229910052727 yttrium Inorganic materials 0.000 claims description 10
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 6
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 5
- 239000000395 magnesium oxide Substances 0.000 claims description 4
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 229910052596 spinel Inorganic materials 0.000 claims description 3
- 239000011029 spinel Substances 0.000 claims description 3
- 238000012423 maintenance Methods 0.000 claims description 2
- 229910052746 lanthanum Inorganic materials 0.000 claims 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims 1
- 239000010408 film Substances 0.000 description 40
- 238000000034 method Methods 0.000 description 19
- 229910052733 gallium Inorganic materials 0.000 description 14
- 150000001875 compounds Chemical class 0.000 description 11
- 229910052688 Gadolinium Inorganic materials 0.000 description 9
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 229910052693 Europium Inorganic materials 0.000 description 7
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 6
- 230000005381 magnetic domain Effects 0.000 description 6
- 238000002231 Czochralski process Methods 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 5
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 5
- 229910052772 Samarium Inorganic materials 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000000155 melt Substances 0.000 description 4
- 229910052692 Dysprosium Inorganic materials 0.000 description 3
- -1 Iron Lanthanide Chemical class 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910021644 lanthanide ion Inorganic materials 0.000 description 3
- 229910052761 rare earth metal Inorganic materials 0.000 description 3
- 150000002910 rare earth metals Chemical class 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 2
- 229910052771 Terbium Inorganic materials 0.000 description 2
- VNHSOQJRWQOYSM-UHFFFAOYSA-N [Fe].[Gd].[Y] Chemical compound [Fe].[Gd].[Y] VNHSOQJRWQOYSM-UHFFFAOYSA-N 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000013016 damping Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 238000004943 liquid phase epitaxy Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 2
- 238000005019 vapor deposition process Methods 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- CFXVEGVCTMYVIW-UHFFFAOYSA-N [Fe].[Eu] Chemical compound [Fe].[Eu] CFXVEGVCTMYVIW-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 244000309464 bull Species 0.000 description 1
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- ZSOJHTHUCUGDHS-UHFFFAOYSA-N gadolinium iron Chemical compound [Fe].[Gd] ZSOJHTHUCUGDHS-UHFFFAOYSA-N 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- MTRJKZUDDJZTLA-UHFFFAOYSA-N iron yttrium Chemical compound [Fe].[Y] MTRJKZUDDJZTLA-UHFFFAOYSA-N 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 239000002609 medium Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910000889 permalloy Inorganic materials 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910052566 spinel group Inorganic materials 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000006163 transport media Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/18—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being compounds
- H01F10/20—Ferrites
- H01F10/24—Garnets
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Power Engineering (AREA)
- Thin Magnetic Films (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US16893471A | 1971-08-04 | 1971-08-04 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2232902A1 true DE2232902A1 (de) | 1973-02-15 |
Family
ID=22613568
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19722232902 Pending DE2232902A1 (de) | 1971-08-04 | 1972-07-05 | Magnetische granat-einkristallschicht |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS4825197A (enrdf_load_stackoverflow) |
| CA (1) | CA945357A (enrdf_load_stackoverflow) |
| DE (1) | DE2232902A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2148314A1 (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0044586A3 (en) * | 1980-07-22 | 1982-02-03 | N.V. Philips' Gloeilampenfabrieken | Device for propagating magnetic domains |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5058094A (enrdf_load_stackoverflow) * | 1973-09-21 | 1975-05-20 | ||
| JPS5160998A (en) * | 1974-11-25 | 1976-05-27 | Nippon Telegraph & Telephone | Jikibaburu gaanetsutohakumakubaitaino seizohoho |
| US4263374A (en) * | 1978-06-22 | 1981-04-21 | Rockwell International Corporation | Temperature-stabilized low-loss ferrite films |
| JPS6057210B2 (ja) * | 1978-10-13 | 1985-12-13 | 株式会社日立製作所 | 磁気バブルメモリ素子用ガ−ネット膜 |
| JPS58153309A (ja) * | 1982-03-05 | 1983-09-12 | Hitachi Ltd | イオン打込み素子用ガ−ネツト膜 |
-
1972
- 1972-07-05 DE DE19722232902 patent/DE2232902A1/de active Pending
- 1972-07-26 FR FR7228827A patent/FR2148314A1/fr active Granted
- 1972-07-28 JP JP7522972A patent/JPS4825197A/ja active Pending
- 1972-08-03 CA CA148,608A patent/CA945357A/en not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0044586A3 (en) * | 1980-07-22 | 1982-02-03 | N.V. Philips' Gloeilampenfabrieken | Device for propagating magnetic domains |
| US4435484A (en) | 1980-07-22 | 1984-03-06 | U.S. Philips Corporation | Device for propagating magnetic domains |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2148314A1 (en) | 1973-03-11 |
| CA945357A (en) | 1974-04-16 |
| FR2148314B1 (enrdf_load_stackoverflow) | 1975-03-07 |
| JPS4825197A (enrdf_load_stackoverflow) | 1973-04-02 |
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