FR2148314A1 - Magnetic iron garnet monocrystal layer - contg a lanthanide and yttrium - Google Patents

Magnetic iron garnet monocrystal layer - contg a lanthanide and yttrium

Info

Publication number
FR2148314A1
FR2148314A1 FR7228827A FR7228827A FR2148314A1 FR 2148314 A1 FR2148314 A1 FR 2148314A1 FR 7228827 A FR7228827 A FR 7228827A FR 7228827 A FR7228827 A FR 7228827A FR 2148314 A1 FR2148314 A1 FR 2148314A1
Authority
FR
France
Prior art keywords
iron garnet
yttrium
contg
lanthanide
magnetic iron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7228827A
Other languages
French (fr)
Other versions
FR2148314B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2148314A1 publication Critical patent/FR2148314A1/en
Application granted granted Critical
Publication of FR2148314B1 publication Critical patent/FR2148314B1/fr
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00Thin magnetic films, e.g. of one-domain structure
    • H01F10/08Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
    • H01F10/10Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
    • H01F10/18Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being compounds
    • H01F10/20Ferrites
    • H01F10/24Garnets

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Power Engineering (AREA)
  • Thin Magnetic Films (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

Iron garnet monocrystal layer having a uniaxial anisotropy for preservation and continuation of magnetic cylindrical single-wall domains produced therein, is improved in that an iron garnet film on a substrate, showing a mechanically produced uniaxial anisotropy, contains yttrium besides a single lanthanide element so that the difference between the lattices of the substrate and the film is 0.02-0.16. The film used for information storage has increased domain speed in a wide range of field strength. High density of bits is achieved.
FR7228827A 1971-08-04 1972-07-26 Magnetic iron garnet monocrystal layer - contg a lanthanide and yttrium Granted FR2148314A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US16893471A 1971-08-04 1971-08-04

Publications (2)

Publication Number Publication Date
FR2148314A1 true FR2148314A1 (en) 1973-03-11
FR2148314B1 FR2148314B1 (en) 1975-03-07

Family

ID=22613568

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7228827A Granted FR2148314A1 (en) 1971-08-04 1972-07-26 Magnetic iron garnet monocrystal layer - contg a lanthanide and yttrium

Country Status (4)

Country Link
JP (1) JPS4825197A (en)
CA (1) CA945357A (en)
DE (1) DE2232902A1 (en)
FR (1) FR2148314A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2429484A1 (en) * 1978-06-22 1980-01-18 Rockwell International Corp ELEMENT WITH A FERROMAGNETIC RESONANCE COMPOSITE STRUCTURE AND ITS MANUFACTURING METHOD
EP0088228A2 (en) * 1982-03-05 1983-09-14 Hitachi, Ltd. Garnet film for ion-implanted magnetic bubble device

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5058094A (en) * 1973-09-21 1975-05-20
JPS5160998A (en) * 1974-11-25 1976-05-27 Nippon Telegraph & Telephone Jikibaburu gaanetsutohakumakubaitaino seizohoho
JPS6057210B2 (en) * 1978-10-13 1985-12-13 株式会社日立製作所 Garnet film for magnetic bubble memory elements
NL8004201A (en) * 1980-07-22 1982-02-16 Philips Nv Apparatus for the advancement of magnetic domains.

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2429484A1 (en) * 1978-06-22 1980-01-18 Rockwell International Corp ELEMENT WITH A FERROMAGNETIC RESONANCE COMPOSITE STRUCTURE AND ITS MANUFACTURING METHOD
EP0088228A2 (en) * 1982-03-05 1983-09-14 Hitachi, Ltd. Garnet film for ion-implanted magnetic bubble device
EP0088228A3 (en) * 1982-03-05 1986-01-08 Hitachi, Ltd. Garnet film for ion-implanted magnetic bubble device

Also Published As

Publication number Publication date
DE2232902A1 (en) 1973-02-15
JPS4825197A (en) 1973-04-02
FR2148314B1 (en) 1975-03-07
CA945357A (en) 1974-04-16

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Legal Events

Date Code Title Description
ST Notification of lapse