DE2232171C3 - Fotoleitende Verbundsschicht und Verfahren zu deren Herstellung - Google Patents
Fotoleitende Verbundsschicht und Verfahren zu deren HerstellungInfo
- Publication number
- DE2232171C3 DE2232171C3 DE2232171A DE2232171A DE2232171C3 DE 2232171 C3 DE2232171 C3 DE 2232171C3 DE 2232171 A DE2232171 A DE 2232171A DE 2232171 A DE2232171 A DE 2232171A DE 2232171 C3 DE2232171 C3 DE 2232171C3
- Authority
- DE
- Germany
- Prior art keywords
- layer
- layers
- solid
- antimony
- vacuum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000002131 composite material Substances 0.000 title claims description 38
- 238000000034 method Methods 0.000 title claims description 8
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000007787 solid Substances 0.000 claims description 61
- 229910052787 antimony Inorganic materials 0.000 claims description 30
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 30
- 239000000463 material Substances 0.000 claims description 20
- 229940007424 antimony trisulfide Drugs 0.000 claims description 17
- NVWBARWTDVQPJD-UHFFFAOYSA-N antimony(3+);trisulfide Chemical compound [S-2].[S-2].[S-2].[Sb+3].[Sb+3] NVWBARWTDVQPJD-UHFFFAOYSA-N 0.000 claims description 17
- 229910052756 noble gas Inorganic materials 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 6
- 229910052785 arsenic Inorganic materials 0.000 claims description 5
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 5
- WBFMCDAQUDITAS-UHFFFAOYSA-N arsenic triselenide Chemical compound [Se]=[As][Se][As]=[Se] WBFMCDAQUDITAS-UHFFFAOYSA-N 0.000 claims description 4
- 230000000712 assembly Effects 0.000 claims 1
- 238000000429 assembly Methods 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 238000010894 electron beam technology Methods 0.000 claims 1
- MNWBNISUBARLIT-UHFFFAOYSA-N sodium cyanide Chemical compound [Na+].N#[C-] MNWBNISUBARLIT-UHFFFAOYSA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 description 124
- 206010034972 Photosensitivity reaction Diseases 0.000 description 6
- 230000036211 photosensitivity Effects 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 101150021183 65 gene Proteins 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910000464 lead oxide Inorganic materials 0.000 description 1
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000000284 resting effect Effects 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 229940065287 selenium compound Drugs 0.000 description 1
- 150000003343 selenium compounds Chemical class 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/20—Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel
- H01J9/233—Manufacture of photoelectric screens or charge-storage screens
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
- H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
- H01J29/36—Photoelectric screens; Charge-storage screens
- H01J29/39—Charge-storage screens
- H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Formation Of Various Coating Films On Cathode Ray Tubes And Lamps (AREA)
- Photoreceptors In Electrophotography (AREA)
- Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
- Light Receiving Elements (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US266708A US3890524A (en) | 1972-06-27 | 1972-06-27 | Photo-conductive target comprising both solid and porous layers |
| GB3029572A GB1391953A (en) | 1972-06-27 | 1972-06-28 | Compound photo-conductive structure and method of manufacturing the same |
| FR7223607A FR2191255B1 (enrdf_load_stackoverflow) | 1972-06-27 | 1972-06-29 | |
| DE2232171A DE2232171C3 (de) | 1972-06-27 | 1972-06-30 | Fotoleitende Verbundsschicht und Verfahren zu deren Herstellung |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US266708A US3890524A (en) | 1972-06-27 | 1972-06-27 | Photo-conductive target comprising both solid and porous layers |
| GB3029572A GB1391953A (en) | 1972-06-27 | 1972-06-28 | Compound photo-conductive structure and method of manufacturing the same |
| FR7223607A FR2191255B1 (enrdf_load_stackoverflow) | 1972-06-27 | 1972-06-29 | |
| DE2232171A DE2232171C3 (de) | 1972-06-27 | 1972-06-30 | Fotoleitende Verbundsschicht und Verfahren zu deren Herstellung |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE2232171A1 DE2232171A1 (de) | 1974-01-17 |
| DE2232171B2 DE2232171B2 (de) | 1974-07-18 |
| DE2232171C3 true DE2232171C3 (de) | 1980-07-03 |
Family
ID=27431513
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2232171A Expired DE2232171C3 (de) | 1972-06-27 | 1972-06-30 | Fotoleitende Verbundsschicht und Verfahren zu deren Herstellung |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US3890524A (enrdf_load_stackoverflow) |
| DE (1) | DE2232171C3 (enrdf_load_stackoverflow) |
| FR (1) | FR2191255B1 (enrdf_load_stackoverflow) |
| GB (1) | GB1391953A (enrdf_load_stackoverflow) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5419128B2 (enrdf_load_stackoverflow) * | 1974-06-21 | 1979-07-12 | ||
| US4039887A (en) * | 1975-06-04 | 1977-08-02 | Rca Corporation | Electron emitter including porous antimony |
| FR2441264A1 (fr) * | 1978-11-08 | 1980-06-06 | Hitachi Ltd | Ecran sensible aux radiations |
| JPS56152280A (en) * | 1980-04-25 | 1981-11-25 | Hitachi Ltd | Light receiving surface |
| IL143852A0 (en) * | 2001-06-19 | 2002-04-21 | Real Time Radiography Ltd | Laminated semiconductor radiation detector |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE545266A (enrdf_load_stackoverflow) * | 1955-02-18 | |||
| NL219124A (enrdf_load_stackoverflow) * | 1956-07-24 | |||
| GB1098076A (en) * | 1963-09-21 | 1968-01-03 | Electrical & Musical Ind Ltd | Improvements relating to photo-conductive coatings |
| US3361919A (en) * | 1964-12-15 | 1968-01-02 | Tokyo Shibaura Electric Co | Target including at least three photoconductive layers of lead oxide of similar conductivity type |
| US3657596A (en) * | 1965-05-20 | 1972-04-18 | Westinghouse Electric Corp | Electron image device having target comprising porous region adjacent conductive layer and outer, denser region |
| US3350595A (en) * | 1965-11-15 | 1967-10-31 | Rca Corp | Low dark current photoconductive device |
-
1972
- 1972-06-27 US US266708A patent/US3890524A/en not_active Expired - Lifetime
- 1972-06-28 GB GB3029572A patent/GB1391953A/en not_active Expired
- 1972-06-29 FR FR7223607A patent/FR2191255B1/fr not_active Expired
- 1972-06-30 DE DE2232171A patent/DE2232171C3/de not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| US3890524A (en) | 1975-06-17 |
| GB1391953A (en) | 1975-04-23 |
| FR2191255A1 (enrdf_load_stackoverflow) | 1974-02-01 |
| DE2232171B2 (de) | 1974-07-18 |
| FR2191255B1 (enrdf_load_stackoverflow) | 1976-01-16 |
| DE2232171A1 (de) | 1974-01-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C3 | Grant after two publication steps (3rd publication) | ||
| 8339 | Ceased/non-payment of the annual fee |