DE2227190C3 - Verfahren zur Herstellung von Kristallen und deren Verwendung - Google Patents
Verfahren zur Herstellung von Kristallen und deren VerwendungInfo
- Publication number
- DE2227190C3 DE2227190C3 DE2227190A DE2227190A DE2227190C3 DE 2227190 C3 DE2227190 C3 DE 2227190C3 DE 2227190 A DE2227190 A DE 2227190A DE 2227190 A DE2227190 A DE 2227190A DE 2227190 C3 DE2227190 C3 DE 2227190C3
- Authority
- DE
- Germany
- Prior art keywords
- liquid phase
- phase
- crystals
- substance
- solid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 title claims description 26
- 238000000034 method Methods 0.000 title claims description 13
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- 239000007791 liquid phase Substances 0.000 claims description 25
- 239000000126 substance Substances 0.000 claims description 13
- 239000012071 phase Substances 0.000 claims description 10
- 239000007790 solid phase Substances 0.000 claims description 10
- 238000002425 crystallisation Methods 0.000 claims description 7
- 230000008025 crystallization Effects 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 4
- 230000005502 phase rule Effects 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 239000004033 plastic Substances 0.000 claims description 3
- 230000005684 electric field Effects 0.000 claims description 2
- 230000003014 reinforcing effect Effects 0.000 claims description 2
- 239000004615 ingredient Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 12
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 8
- 239000000203 mixture Substances 0.000 description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 7
- 239000007789 gas Substances 0.000 description 5
- 239000007787 solid Substances 0.000 description 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 4
- 239000000470 constituent Substances 0.000 description 4
- 229910052742 iron Inorganic materials 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000006229 carbon black Substances 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000004071 soot Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-NJFSPNSNSA-N Carbon-14 Chemical compound [14C] OKTJSMMVPCPJKN-NJFSPNSNSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000011863 silicon-based powder Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
- C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
- C30B11/12—Vaporous components, e.g. vapour-liquid-solid-growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
- C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
- C30B11/10—Solid or liquid components, e.g. Verneuil method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL7108094A NL7108094A (enExample) | 1971-06-12 | 1971-06-12 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE2227190A1 DE2227190A1 (de) | 1973-01-18 |
| DE2227190B2 DE2227190B2 (de) | 1980-11-27 |
| DE2227190C3 true DE2227190C3 (de) | 1981-07-02 |
Family
ID=19813372
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2227190A Expired DE2227190C3 (de) | 1971-06-12 | 1972-06-03 | Verfahren zur Herstellung von Kristallen und deren Verwendung |
Country Status (8)
| Country | Link |
|---|---|
| JP (1) | JPS5343158B1 (enExample) |
| BE (1) | BE784752A (enExample) |
| CA (1) | CA962557A (enExample) |
| DE (1) | DE2227190C3 (enExample) |
| FR (1) | FR2143699B1 (enExample) |
| GB (1) | GB1400562A (enExample) |
| IT (1) | IT959108B (enExample) |
| NL (1) | NL7108094A (enExample) |
-
1971
- 1971-06-12 NL NL7108094A patent/NL7108094A/xx unknown
-
1972
- 1972-06-03 DE DE2227190A patent/DE2227190C3/de not_active Expired
- 1972-06-06 CA CA143,950A patent/CA962557A/en not_active Expired
- 1972-06-09 JP JP7256946A patent/JPS5343158B1/ja active Pending
- 1972-06-09 FR FR7220896A patent/FR2143699B1/fr not_active Expired
- 1972-06-09 GB GB2707572A patent/GB1400562A/en not_active Expired
- 1972-06-09 IT IT68857/72A patent/IT959108B/it active
- 1972-06-12 BE BE784752A patent/BE784752A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| NL7108094A (enExample) | 1972-12-14 |
| DE2227190A1 (de) | 1973-01-18 |
| DE2227190B2 (de) | 1980-11-27 |
| FR2143699A1 (enExample) | 1973-02-09 |
| IT959108B (it) | 1973-11-10 |
| BE784752A (fr) | 1972-12-12 |
| CA962557A (en) | 1975-02-11 |
| GB1400562A (en) | 1975-07-16 |
| JPS5343158B1 (enExample) | 1978-11-17 |
| FR2143699B1 (enExample) | 1977-06-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE1667657C3 (de) | Verfahren zur Herstellung von Siliciumkarbidwhiskers | |
| DE3415799C2 (enExample) | ||
| DE69623962T2 (de) | Verfahren und vorrichtung zum epitaktischen wachstum mittels cvd | |
| DE2609907C2 (de) | Verfahren zum epitaktischen Abscheiden von einkristallinem Galliumnitrid auf einem Substrat | |
| DE1965258C3 (de) | Verfahren zur Herstellung einer epitaktischen Schicht | |
| DE2648053C2 (de) | Verfahren und Vorrichtung zum gleichmäßigen Beschichten von keramischen Substraten mit Silizium | |
| DE2745335A1 (de) | Vorrichtung zum ziehen von einkristallinem silizium | |
| DE1290921B (de) | Kristallzuechtungsverfahren | |
| DE1197058B (de) | Verfahren zur Herstellung einkristalliner flacher Halbleiterkoerper | |
| DE1223951B (de) | Verfahren zur Herstellung von Halbleiter-bauelementen mit einem oder mehreren PN-UEbergaengen | |
| DE10022333A1 (de) | Siliciumcarbidbeschichteter Graphitwerksoff | |
| DE69511469T2 (de) | Verfahren und Vorrichtung zur Herstellung von Diamanten | |
| DE2153862C3 (enExample) | ||
| DE1514280B2 (de) | Geschichteter Grundkörper für Halbleiterbauelemente | |
| DE1901819B2 (de) | Herstellungsverfahren für polykristalline Siliciumschichten | |
| DE2227190C3 (de) | Verfahren zur Herstellung von Kristallen und deren Verwendung | |
| DE69906129T2 (de) | Grossflächige einkristalline monoatomschicht aus kohlenstoff vom diamant-typ und verfahren zu ihrer herstellung | |
| DE2161472C3 (de) | Verfahren zum Aufwachsen einer polykristallinen Silicium-Schicht auf einer Halbleiterscheibe | |
| DE1917136C3 (de) | Verfahren zur Herstellung von drahtförmigen Kristallen | |
| DE2163075C2 (de) | Verfahren zur Herstellung von elektrolumineszierenden Halbleiterbauelementen | |
| DE1231676B (de) | Verfahren zur Herstellung eines Silicium- oder Germaniumfilms auf einer Silicium- bzw. Germaniumunterlage durch epitaktisches Aufwachsen | |
| DE1233833B (de) | Verfahren zur Herstellung eines Einkristalls, insbesondere Halbleitereinkristalls | |
| DE1444396A1 (de) | Verfahren zur Regelung der Zusammensetzung einer Dampfphase | |
| EP1774056B1 (de) | Verfahren zur abscheidung von silizium und germanium enthaltenden schichten | |
| DE69415716T2 (de) | Verfahren zur Herstellung eines Metalloxid-Kristalls |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C3 | Grant after two publication steps (3rd publication) | ||
| 8339 | Ceased/non-payment of the annual fee |