DE2221865A1 - Halbleitervorrichtung mit isoliertem Tor - Google Patents

Halbleitervorrichtung mit isoliertem Tor

Info

Publication number
DE2221865A1
DE2221865A1 DE19722221865 DE2221865A DE2221865A1 DE 2221865 A1 DE2221865 A1 DE 2221865A1 DE 19722221865 DE19722221865 DE 19722221865 DE 2221865 A DE2221865 A DE 2221865A DE 2221865 A1 DE2221865 A1 DE 2221865A1
Authority
DE
Germany
Prior art keywords
areas
substrate
semiconductor device
gate
conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19722221865
Other languages
German (de)
English (en)
Inventor
Takashi Fujita
Takehiro Tsuzaki
Akio Yamashita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of DE2221865A1 publication Critical patent/DE2221865A1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H10D62/299—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Thyristors (AREA)
DE19722221865 1971-05-08 1972-05-04 Halbleitervorrichtung mit isoliertem Tor Pending DE2221865A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3063571 1971-05-08

Publications (1)

Publication Number Publication Date
DE2221865A1 true DE2221865A1 (de) 1972-11-23

Family

ID=12309285

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19722221865 Pending DE2221865A1 (de) 1971-05-08 1972-05-04 Halbleitervorrichtung mit isoliertem Tor

Country Status (6)

Country Link
AU (1) AU453010B2 (enrdf_load_stackoverflow)
CA (1) CA961172A (enrdf_load_stackoverflow)
DE (1) DE2221865A1 (enrdf_load_stackoverflow)
FR (1) FR2137592B1 (enrdf_load_stackoverflow)
GB (1) GB1390135A (enrdf_load_stackoverflow)
NL (1) NL7206103A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2455730A1 (de) * 1973-12-03 1975-06-05 Rca Corp Stabilisierte halbleiter-bauelemente und verfahren zur herstellung derselben

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2428327A1 (fr) * 1978-06-09 1980-01-04 Thomson Csf Transistor a effet de champ constituant un point memoire et son procede de realisation
US5191396B1 (en) * 1978-10-13 1995-12-26 Int Rectifier Corp High power mosfet with low on-resistance and high breakdown voltage
JPS5553462A (en) * 1978-10-13 1980-04-18 Int Rectifier Corp Mosfet element
US5130767C1 (en) * 1979-05-14 2001-08-14 Int Rectifier Corp Plural polygon source pattern for mosfet
EP0039736A4 (en) * 1979-11-14 1983-04-06 Ncr Corp CONDUCTOR-INSULATION-SEMICONDUCTOR DEVICES AND THEIR MANUFACTURING METHOD.
US4835585A (en) * 1984-11-26 1989-05-30 American Telephone And Telegraph Company, At&T Bell Laboratories Trench gate structures
US4766094A (en) * 1986-03-21 1988-08-23 Hollinger Theodore G Semiconductor doping process
US5231474A (en) * 1986-03-21 1993-07-27 Advanced Power Technology, Inc. Semiconductor device with doped electrical breakdown control region
US5869371A (en) * 1995-06-07 1999-02-09 Stmicroelectronics, Inc. Structure and process for reducing the on-resistance of mos-gated power devices
EP1003222A1 (en) * 1998-11-19 2000-05-24 STMicroelectronics S.r.l. Improved field-effect transistor and corresponding manufacturing method
US9099556B2 (en) * 2011-08-19 2015-08-04 Taiwan Semiconductor Manufacturing Company, Ltd. Transistor having an active region with wing structure

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3440502A (en) * 1966-07-05 1969-04-22 Westinghouse Electric Corp Insulated gate field effect transistor structure with reduced current leakage

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2455730A1 (de) * 1973-12-03 1975-06-05 Rca Corp Stabilisierte halbleiter-bauelemente und verfahren zur herstellung derselben

Also Published As

Publication number Publication date
CA961172A (en) 1975-01-14
FR2137592A1 (enrdf_load_stackoverflow) 1972-12-29
NL7206103A (enrdf_load_stackoverflow) 1972-11-10
AU453010B2 (en) 1974-09-19
AU4195572A (en) 1974-05-16
GB1390135A (en) 1975-04-09
FR2137592B1 (enrdf_load_stackoverflow) 1979-02-09

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Legal Events

Date Code Title Description
OHW Rejection