DE2221865A1 - Halbleitervorrichtung mit isoliertem Tor - Google Patents
Halbleitervorrichtung mit isoliertem TorInfo
- Publication number
- DE2221865A1 DE2221865A1 DE19722221865 DE2221865A DE2221865A1 DE 2221865 A1 DE2221865 A1 DE 2221865A1 DE 19722221865 DE19722221865 DE 19722221865 DE 2221865 A DE2221865 A DE 2221865A DE 2221865 A1 DE2221865 A1 DE 2221865A1
- Authority
- DE
- Germany
- Prior art keywords
- areas
- substrate
- semiconductor device
- gate
- conductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 22
- 239000000758 substrate Substances 0.000 claims description 17
- 230000015556 catabolic process Effects 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 240000002989 Euphorbia neriifolia Species 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 101000870345 Vasconcellea cundinamarcensis Cysteine proteinase 1 Proteins 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- OWZREIFADZCYQD-NSHGMRRFSA-N deltamethrin Chemical compound CC1(C)[C@@H](C=C(Br)Br)[C@H]1C(=O)O[C@H](C#N)C1=CC=CC(OC=2C=CC=CC=2)=C1 OWZREIFADZCYQD-NSHGMRRFSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/213—Channel regions of field-effect devices
- H10D62/221—Channel regions of field-effect devices of FETs
- H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
- H10D62/299—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/213—Channel regions of field-effect devices
- H10D62/221—Channel regions of field-effect devices of FETs
- H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Electrodes Of Semiconductors (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3063571 | 1971-05-08 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE2221865A1 true DE2221865A1 (de) | 1972-11-23 |
Family
ID=12309285
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19722221865 Pending DE2221865A1 (de) | 1971-05-08 | 1972-05-04 | Halbleitervorrichtung mit isoliertem Tor |
Country Status (6)
Country | Link |
---|---|
AU (1) | AU453010B2 (enrdf_load_stackoverflow) |
CA (1) | CA961172A (enrdf_load_stackoverflow) |
DE (1) | DE2221865A1 (enrdf_load_stackoverflow) |
FR (1) | FR2137592B1 (enrdf_load_stackoverflow) |
GB (1) | GB1390135A (enrdf_load_stackoverflow) |
NL (1) | NL7206103A (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2455730A1 (de) * | 1973-12-03 | 1975-06-05 | Rca Corp | Stabilisierte halbleiter-bauelemente und verfahren zur herstellung derselben |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2428327A1 (fr) * | 1978-06-09 | 1980-01-04 | Thomson Csf | Transistor a effet de champ constituant un point memoire et son procede de realisation |
JPS5553462A (en) * | 1978-10-13 | 1980-04-18 | Int Rectifier Corp | Mosfet element |
US5191396B1 (en) * | 1978-10-13 | 1995-12-26 | Int Rectifier Corp | High power mosfet with low on-resistance and high breakdown voltage |
US5130767C1 (en) * | 1979-05-14 | 2001-08-14 | Int Rectifier Corp | Plural polygon source pattern for mosfet |
WO1981001485A1 (en) * | 1979-11-14 | 1981-05-28 | Ncr Co | Narrow channel field effect semiconductor devices and methods for making |
US4835585A (en) * | 1984-11-26 | 1989-05-30 | American Telephone And Telegraph Company, At&T Bell Laboratories | Trench gate structures |
US5231474A (en) * | 1986-03-21 | 1993-07-27 | Advanced Power Technology, Inc. | Semiconductor device with doped electrical breakdown control region |
US4766094A (en) * | 1986-03-21 | 1988-08-23 | Hollinger Theodore G | Semiconductor doping process |
US5869371A (en) * | 1995-06-07 | 1999-02-09 | Stmicroelectronics, Inc. | Structure and process for reducing the on-resistance of mos-gated power devices |
EP1003222A1 (en) * | 1998-11-19 | 2000-05-24 | STMicroelectronics S.r.l. | Improved field-effect transistor and corresponding manufacturing method |
US9099556B2 (en) * | 2011-08-19 | 2015-08-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Transistor having an active region with wing structure |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3440502A (en) * | 1966-07-05 | 1969-04-22 | Westinghouse Electric Corp | Insulated gate field effect transistor structure with reduced current leakage |
-
1972
- 1972-05-04 GB GB2077572A patent/GB1390135A/en not_active Expired
- 1972-05-04 DE DE19722221865 patent/DE2221865A1/de active Pending
- 1972-05-05 NL NL7206103A patent/NL7206103A/xx unknown
- 1972-05-05 AU AU41955/72A patent/AU453010B2/en not_active Expired
- 1972-05-05 FR FR727216267A patent/FR2137592B1/fr not_active Expired
- 1972-05-08 CA CA141,573A patent/CA961172A/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2455730A1 (de) * | 1973-12-03 | 1975-06-05 | Rca Corp | Stabilisierte halbleiter-bauelemente und verfahren zur herstellung derselben |
Also Published As
Publication number | Publication date |
---|---|
AU4195572A (en) | 1974-05-16 |
GB1390135A (en) | 1975-04-09 |
FR2137592A1 (enrdf_load_stackoverflow) | 1972-12-29 |
NL7206103A (enrdf_load_stackoverflow) | 1972-11-10 |
CA961172A (en) | 1975-01-14 |
FR2137592B1 (enrdf_load_stackoverflow) | 1979-02-09 |
AU453010B2 (en) | 1974-09-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
OHW | Rejection |