NL7206103A - - Google Patents
Info
- Publication number
- NL7206103A NL7206103A NL7206103A NL7206103A NL7206103A NL 7206103 A NL7206103 A NL 7206103A NL 7206103 A NL7206103 A NL 7206103A NL 7206103 A NL7206103 A NL 7206103A NL 7206103 A NL7206103 A NL 7206103A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/213—Channel regions of field-effect devices
- H10D62/221—Channel regions of field-effect devices of FETs
- H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
- H10D62/299—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/213—Channel regions of field-effect devices
- H10D62/221—Channel regions of field-effect devices of FETs
- H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3063571 | 1971-05-08 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL7206103A true NL7206103A (enrdf_load_stackoverflow) | 1972-11-10 |
Family
ID=12309285
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL7206103A NL7206103A (enrdf_load_stackoverflow) | 1971-05-08 | 1972-05-05 |
Country Status (6)
| Country | Link |
|---|---|
| AU (1) | AU453010B2 (enrdf_load_stackoverflow) |
| CA (1) | CA961172A (enrdf_load_stackoverflow) |
| DE (1) | DE2221865A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2137592B1 (enrdf_load_stackoverflow) |
| GB (1) | GB1390135A (enrdf_load_stackoverflow) |
| NL (1) | NL7206103A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102956706A (zh) * | 2011-08-19 | 2013-03-06 | 台湾积体电路制造股份有限公司 | 具有翼结构的晶体管 |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3890632A (en) * | 1973-12-03 | 1975-06-17 | Rca Corp | Stabilized semiconductor devices and method of making same |
| FR2428327A1 (fr) * | 1978-06-09 | 1980-01-04 | Thomson Csf | Transistor a effet de champ constituant un point memoire et son procede de realisation |
| JPS5553462A (en) * | 1978-10-13 | 1980-04-18 | Int Rectifier Corp | Mosfet element |
| US5191396B1 (en) * | 1978-10-13 | 1995-12-26 | Int Rectifier Corp | High power mosfet with low on-resistance and high breakdown voltage |
| US5130767C1 (en) * | 1979-05-14 | 2001-08-14 | Int Rectifier Corp | Plural polygon source pattern for mosfet |
| JPS56501509A (enrdf_load_stackoverflow) * | 1979-11-14 | 1981-10-15 | ||
| US4835585A (en) * | 1984-11-26 | 1989-05-30 | American Telephone And Telegraph Company, At&T Bell Laboratories | Trench gate structures |
| US5231474A (en) * | 1986-03-21 | 1993-07-27 | Advanced Power Technology, Inc. | Semiconductor device with doped electrical breakdown control region |
| US4766094A (en) * | 1986-03-21 | 1988-08-23 | Hollinger Theodore G | Semiconductor doping process |
| US5869371A (en) * | 1995-06-07 | 1999-02-09 | Stmicroelectronics, Inc. | Structure and process for reducing the on-resistance of mos-gated power devices |
| EP1003222A1 (en) * | 1998-11-19 | 2000-05-24 | STMicroelectronics S.r.l. | Improved field-effect transistor and corresponding manufacturing method |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3440502A (en) * | 1966-07-05 | 1969-04-22 | Westinghouse Electric Corp | Insulated gate field effect transistor structure with reduced current leakage |
-
1972
- 1972-05-04 GB GB2077572A patent/GB1390135A/en not_active Expired
- 1972-05-04 DE DE19722221865 patent/DE2221865A1/de active Pending
- 1972-05-05 AU AU41955/72A patent/AU453010B2/en not_active Expired
- 1972-05-05 NL NL7206103A patent/NL7206103A/xx unknown
- 1972-05-05 FR FR727216267A patent/FR2137592B1/fr not_active Expired
- 1972-05-08 CA CA141,573A patent/CA961172A/en not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102956706A (zh) * | 2011-08-19 | 2013-03-06 | 台湾积体电路制造股份有限公司 | 具有翼结构的晶体管 |
| CN102956706B (zh) * | 2011-08-19 | 2016-02-24 | 台湾积体电路制造股份有限公司 | 具有翼结构的晶体管 |
Also Published As
| Publication number | Publication date |
|---|---|
| DE2221865A1 (de) | 1972-11-23 |
| AU4195572A (en) | 1974-05-16 |
| GB1390135A (en) | 1975-04-09 |
| AU453010B2 (en) | 1974-09-19 |
| FR2137592A1 (enrdf_load_stackoverflow) | 1972-12-29 |
| FR2137592B1 (enrdf_load_stackoverflow) | 1979-02-09 |
| CA961172A (en) | 1975-01-14 |