GB1390135A - Insulated gate semiconductor device - Google Patents

Insulated gate semiconductor device

Info

Publication number
GB1390135A
GB1390135A GB2077572A GB2077572A GB1390135A GB 1390135 A GB1390135 A GB 1390135A GB 2077572 A GB2077572 A GB 2077572A GB 2077572 A GB2077572 A GB 2077572A GB 1390135 A GB1390135 A GB 1390135A
Authority
GB
United Kingdom
Prior art keywords
regions
gap
type
insulated gate
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2077572A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of GB1390135A publication Critical patent/GB1390135A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H10D62/299—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Thyristors (AREA)
GB2077572A 1971-05-08 1972-05-04 Insulated gate semiconductor device Expired GB1390135A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3063571 1971-05-08

Publications (1)

Publication Number Publication Date
GB1390135A true GB1390135A (en) 1975-04-09

Family

ID=12309285

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2077572A Expired GB1390135A (en) 1971-05-08 1972-05-04 Insulated gate semiconductor device

Country Status (6)

Country Link
AU (1) AU453010B2 (enrdf_load_stackoverflow)
CA (1) CA961172A (enrdf_load_stackoverflow)
DE (1) DE2221865A1 (enrdf_load_stackoverflow)
FR (1) FR2137592B1 (enrdf_load_stackoverflow)
GB (1) GB1390135A (enrdf_load_stackoverflow)
NL (1) NL7206103A (enrdf_load_stackoverflow)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4766094A (en) * 1986-03-21 1988-08-23 Hollinger Theodore G Semiconductor doping process
US4835585A (en) * 1984-11-26 1989-05-30 American Telephone And Telegraph Company, At&T Bell Laboratories Trench gate structures
US4959699A (en) * 1978-10-13 1990-09-25 International Rectifier Corporation High power MOSFET with low on-resistance and high breakdown voltage
US5130767A (en) * 1979-05-14 1992-07-14 International Rectifier Corporation Plural polygon source pattern for mosfet
US5231474A (en) * 1986-03-21 1993-07-27 Advanced Power Technology, Inc. Semiconductor device with doped electrical breakdown control region
US5338961A (en) * 1978-10-13 1994-08-16 International Rectifier Corporation High power MOSFET with low on-resistance and high breakdown voltage
US5869371A (en) * 1995-06-07 1999-02-09 Stmicroelectronics, Inc. Structure and process for reducing the on-resistance of mos-gated power devices

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3890632A (en) * 1973-12-03 1975-06-17 Rca Corp Stabilized semiconductor devices and method of making same
FR2428327A1 (fr) * 1978-06-09 1980-01-04 Thomson Csf Transistor a effet de champ constituant un point memoire et son procede de realisation
EP0039736A4 (en) * 1979-11-14 1983-04-06 Ncr Corp CONDUCTOR-INSULATION-SEMICONDUCTOR DEVICES AND THEIR MANUFACTURING METHOD.
EP1003222A1 (en) * 1998-11-19 2000-05-24 STMicroelectronics S.r.l. Improved field-effect transistor and corresponding manufacturing method
US9099556B2 (en) * 2011-08-19 2015-08-04 Taiwan Semiconductor Manufacturing Company, Ltd. Transistor having an active region with wing structure

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3440502A (en) * 1966-07-05 1969-04-22 Westinghouse Electric Corp Insulated gate field effect transistor structure with reduced current leakage

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4959699A (en) * 1978-10-13 1990-09-25 International Rectifier Corporation High power MOSFET with low on-resistance and high breakdown voltage
US5191396A (en) * 1978-10-13 1993-03-02 International Rectifier Corp. High power mosfet with low on-resistance and high breakdown voltage
US5338961A (en) * 1978-10-13 1994-08-16 International Rectifier Corporation High power MOSFET with low on-resistance and high breakdown voltage
US5598018A (en) * 1978-10-13 1997-01-28 International Rectifier Corporation High power MOSFET with low on-resistance and high breakdown voltage
US5742087A (en) * 1978-10-13 1998-04-21 International Rectifier Corporation High power MOSFET with low on-resistance and high breakdown voltage
US5130767A (en) * 1979-05-14 1992-07-14 International Rectifier Corporation Plural polygon source pattern for mosfet
US4835585A (en) * 1984-11-26 1989-05-30 American Telephone And Telegraph Company, At&T Bell Laboratories Trench gate structures
US4766094A (en) * 1986-03-21 1988-08-23 Hollinger Theodore G Semiconductor doping process
US5231474A (en) * 1986-03-21 1993-07-27 Advanced Power Technology, Inc. Semiconductor device with doped electrical breakdown control region
US5434095A (en) * 1986-03-21 1995-07-18 Sundstrand Corporation Method for controlling electrical breakdown in semiconductor power devices
US5869371A (en) * 1995-06-07 1999-02-09 Stmicroelectronics, Inc. Structure and process for reducing the on-resistance of mos-gated power devices
US6046473A (en) * 1995-06-07 2000-04-04 Stmicroelectronics, Inc. Structure and process for reducing the on-resistance of MOS-gated power devices

Also Published As

Publication number Publication date
CA961172A (en) 1975-01-14
FR2137592A1 (enrdf_load_stackoverflow) 1972-12-29
NL7206103A (enrdf_load_stackoverflow) 1972-11-10
DE2221865A1 (de) 1972-11-23
AU453010B2 (en) 1974-09-19
AU4195572A (en) 1974-05-16
FR2137592B1 (enrdf_load_stackoverflow) 1979-02-09

Similar Documents

Publication Publication Date Title
US4729001A (en) Short-channel field effect transistor
GB1450171A (en) Manufacture of mosfets
GB1447849A (en) Stabilized semiconductor devices and method of making same
AU5545894A (en) Power mosfet in silicon carbide
GB1321328A (en) Input transient protection for insulated gate field effect transistors
EP0335750A3 (en) Vertical power mosfet having high withstand voltage and high switching speed
GB1425986A (en) Semiconductor devices comprising insulated-gate- field-effect transistors
GB1328874A (en) Semiconductor devices
US3440502A (en) Insulated gate field effect transistor structure with reduced current leakage
GB1153428A (en) Improvements in Semiconductor Devices.
GB1229946A (enrdf_load_stackoverflow)
GB1175601A (en) Insulated-Gate Field-Effect Transistor
GB1390135A (en) Insulated gate semiconductor device
EP0071335A2 (en) Field effect transistor
GB1186421A (en) Insulated-Gate Field-Effect Transistor
GB1316554A (en) High frequency field-effect transistor
GB1400541A (en) Field effect transistors
GB1060208A (en) Avalanche transistor
GB1357553A (en) Insulated-gate field effect transistors
US3577043A (en) Mosfet with improved voltage breakdown characteristics
JPS63266882A (ja) 縦型絶縁ゲ−ト電界効果トランジスタ
GB1306570A (en) Field effect semiconductor device
JPS6439069A (en) Field-effect transistor
GB983266A (en) Semiconductor switching devices
GB1502122A (en) Semiconductor devices

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
746 Register noted 'licences of right' (sect. 46/1977)
PCNP Patent ceased through non-payment of renewal fee