FR2137592A1 - - Google Patents

Info

Publication number
FR2137592A1
FR2137592A1 FR7216267A FR7216267A FR2137592A1 FR 2137592 A1 FR2137592 A1 FR 2137592A1 FR 7216267 A FR7216267 A FR 7216267A FR 7216267 A FR7216267 A FR 7216267A FR 2137592 A1 FR2137592 A1 FR 2137592A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7216267A
Other languages
French (fr)
Other versions
FR2137592B1 (enrdf_load_stackoverflow
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of FR2137592A1 publication Critical patent/FR2137592A1/fr
Application granted granted Critical
Publication of FR2137592B1 publication Critical patent/FR2137592B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H10D62/299—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
FR727216267A 1971-05-08 1972-05-05 Expired FR2137592B1 (enrdf_load_stackoverflow)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3063571 1971-05-08

Publications (2)

Publication Number Publication Date
FR2137592A1 true FR2137592A1 (enrdf_load_stackoverflow) 1972-12-29
FR2137592B1 FR2137592B1 (enrdf_load_stackoverflow) 1979-02-09

Family

ID=12309285

Family Applications (1)

Application Number Title Priority Date Filing Date
FR727216267A Expired FR2137592B1 (enrdf_load_stackoverflow) 1971-05-08 1972-05-05

Country Status (6)

Country Link
AU (1) AU453010B2 (enrdf_load_stackoverflow)
CA (1) CA961172A (enrdf_load_stackoverflow)
DE (1) DE2221865A1 (enrdf_load_stackoverflow)
FR (1) FR2137592B1 (enrdf_load_stackoverflow)
GB (1) GB1390135A (enrdf_load_stackoverflow)
NL (1) NL7206103A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2428327A1 (fr) * 1978-06-09 1980-01-04 Thomson Csf Transistor a effet de champ constituant un point memoire et son procede de realisation
EP0039736A4 (en) * 1979-11-14 1983-04-06 Ncr Corp CONDUCTOR-INSULATION-SEMICONDUCTOR DEVICES AND THEIR MANUFACTURING METHOD.
EP1003222A1 (en) * 1998-11-19 2000-05-24 STMicroelectronics S.r.l. Improved field-effect transistor and corresponding manufacturing method

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3890632A (en) * 1973-12-03 1975-06-17 Rca Corp Stabilized semiconductor devices and method of making same
JPS5553462A (en) * 1978-10-13 1980-04-18 Int Rectifier Corp Mosfet element
US5191396B1 (en) * 1978-10-13 1995-12-26 Int Rectifier Corp High power mosfet with low on-resistance and high breakdown voltage
US5130767C1 (en) * 1979-05-14 2001-08-14 Int Rectifier Corp Plural polygon source pattern for mosfet
US4835585A (en) * 1984-11-26 1989-05-30 American Telephone And Telegraph Company, At&T Bell Laboratories Trench gate structures
US5231474A (en) * 1986-03-21 1993-07-27 Advanced Power Technology, Inc. Semiconductor device with doped electrical breakdown control region
US4766094A (en) * 1986-03-21 1988-08-23 Hollinger Theodore G Semiconductor doping process
US5869371A (en) * 1995-06-07 1999-02-09 Stmicroelectronics, Inc. Structure and process for reducing the on-resistance of mos-gated power devices
US9099556B2 (en) * 2011-08-19 2015-08-04 Taiwan Semiconductor Manufacturing Company, Ltd. Transistor having an active region with wing structure

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3440502A (en) * 1966-07-05 1969-04-22 Westinghouse Electric Corp Insulated gate field effect transistor structure with reduced current leakage

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3440502A (en) * 1966-07-05 1969-04-22 Westinghouse Electric Corp Insulated gate field effect transistor structure with reduced current leakage

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2428327A1 (fr) * 1978-06-09 1980-01-04 Thomson Csf Transistor a effet de champ constituant un point memoire et son procede de realisation
EP0039736A4 (en) * 1979-11-14 1983-04-06 Ncr Corp CONDUCTOR-INSULATION-SEMICONDUCTOR DEVICES AND THEIR MANUFACTURING METHOD.
EP1003222A1 (en) * 1998-11-19 2000-05-24 STMicroelectronics S.r.l. Improved field-effect transistor and corresponding manufacturing method

Also Published As

Publication number Publication date
DE2221865A1 (de) 1972-11-23
AU4195572A (en) 1974-05-16
GB1390135A (en) 1975-04-09
AU453010B2 (en) 1974-09-19
FR2137592B1 (enrdf_load_stackoverflow) 1979-02-09
CA961172A (en) 1975-01-14
NL7206103A (enrdf_load_stackoverflow) 1972-11-10

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Legal Events

Date Code Title Description
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