DE2217737B2 - Verfahren zum Herstellen eines elektrischen Leitungssystems - Google Patents

Verfahren zum Herstellen eines elektrischen Leitungssystems

Info

Publication number
DE2217737B2
DE2217737B2 DE2217737A DE2217737A DE2217737B2 DE 2217737 B2 DE2217737 B2 DE 2217737B2 DE 2217737 A DE2217737 A DE 2217737A DE 2217737 A DE2217737 A DE 2217737A DE 2217737 B2 DE2217737 B2 DE 2217737B2
Authority
DE
Germany
Prior art keywords
nitrogen
gold
layer
tantalum
containing tantalum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE2217737A
Other languages
German (de)
English (en)
Other versions
DE2217737A1 (de
Inventor
Martin Poughkeepsie Revitz
James Michael Wappingers Falls Thompson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE2217737A1 publication Critical patent/DE2217737A1/de
Publication of DE2217737B2 publication Critical patent/DE2217737B2/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/425—Barrier, adhesion or liner layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44—Conductive materials thereof
    • H10W20/4403—Conductive materials thereof based on metals, e.g. alloys, metal silicides
    • H10W20/4432—Conductive materials thereof based on metals, e.g. alloys, metal silicides the principal metal being a noble metal, e.g. gold
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12389—All metal or with adjacent metals having variation in thickness
    • Y10T428/12396—Discontinuous surface component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12528—Semiconductor component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
    • Y10T428/12576—Boride, carbide or nitride component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
    • Y10T428/12611—Oxide-containing component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12674—Ge- or Si-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12889—Au-base component

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
DE2217737A 1971-05-06 1972-04-13 Verfahren zum Herstellen eines elektrischen Leitungssystems Withdrawn DE2217737B2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US14089171A 1971-05-06 1971-05-06

Publications (2)

Publication Number Publication Date
DE2217737A1 DE2217737A1 (de) 1972-11-16
DE2217737B2 true DE2217737B2 (de) 1979-10-04

Family

ID=22493259

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2217737A Withdrawn DE2217737B2 (de) 1971-05-06 1972-04-13 Verfahren zum Herstellen eines elektrischen Leitungssystems

Country Status (7)

Country Link
US (1) US3701931A (enExample)
JP (1) JPS5622146B1 (enExample)
CA (1) CA961174A (enExample)
DE (1) DE2217737B2 (enExample)
FR (1) FR2135152B1 (enExample)
GB (1) GB1319558A (enExample)
IT (1) IT947886B (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3877063A (en) * 1973-06-27 1975-04-08 Hewlett Packard Co Metallization structure and process for semiconductor devices
US3886580A (en) * 1973-10-09 1975-05-27 Cutler Hammer Inc Tantalum-gallium arsenide schottky barrier semiconductor device
FR2402304A1 (fr) * 1977-08-31 1979-03-30 Int Computers Ltd Procede de connexion electrique d'une pastille de circuit integre
CH648692A5 (en) * 1979-09-05 1985-03-29 Bbc Brown Boveri & Cie Contact arrangement on a semiconductor component
EP0035118B1 (en) * 1980-02-28 1985-11-21 Kabushiki Kaisha Toshiba Iii - v group compound semiconductor light-emitting element and method of producing the same
DE3206421A1 (de) * 1982-02-23 1983-09-01 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von schichten aus hochschmelzenden metallen bzw. metallverbindungen durch abscheidung aus der dampfphase
US4405849A (en) * 1982-03-08 1983-09-20 W. H. Brady Co. Switching contact
US4459321A (en) * 1982-12-30 1984-07-10 International Business Machines Corporation Process for applying closely overlapped mutually protective barrier films
GB2164491B (en) * 1984-09-14 1988-04-07 Stc Plc Semiconductor devices
JPS62259469A (ja) * 1986-05-06 1987-11-11 Hitachi Ltd 半導体装置
US4857418A (en) * 1986-12-08 1989-08-15 Honeywell Inc. Resistive overlayer for magnetic films
US5019461A (en) * 1986-12-08 1991-05-28 Honeywell Inc. Resistive overlayer for thin film devices
US4754431A (en) * 1987-01-28 1988-06-28 Honeywell Inc. Vialess shorting bars for magnetoresistive devices
GB2213839B (en) * 1987-12-23 1992-06-17 Plessey Co Plc Semiconducting thin films
GB2213838A (en) * 1987-12-23 1989-08-23 Plessey Co Plc Environmental protection of superconducting thin films
US4918655A (en) * 1988-02-29 1990-04-17 Honeywell Inc. Magnetic device integrated circuit interconnection system
DE69032893T2 (de) * 1989-11-30 1999-07-22 Kabushiki Kaisha Toshiba, Kawasaki, Kanagawa Werkstoff für elektrische Leiter, Elektronikagerät welches diesen verwendet und Flüssig-Kristall-Anzeige
US5136362A (en) * 1990-11-27 1992-08-04 Grief Malcolm K Electrical contact with diffusion barrier
US5528081A (en) * 1993-06-25 1996-06-18 Hall; John H. High temperature refractory metal contact in silicon integrated circuits

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA791343A (en) * 1968-07-30 International Business Machines Corporation Ohmic contact
DE1508345A1 (de) * 1966-07-19 1969-10-30 Siemens Ag Lot zum Kontaktieren eines Koerpers aus einer Germanium-Silizium-Legierung und Verfahren zu seiner Herstellung

Also Published As

Publication number Publication date
DE2217737A1 (de) 1972-11-16
GB1319558A (en) 1973-06-06
US3701931A (en) 1972-10-31
FR2135152A1 (enExample) 1972-12-15
IT947886B (it) 1973-05-30
FR2135152B1 (enExample) 1976-06-11
CA961174A (en) 1975-01-14
JPS5622146B1 (enExample) 1981-05-23

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Legal Events

Date Code Title Description
OD Request for examination
8230 Patent withdrawn