DE2151200B2 - Verfahren zur Herstellung eines aus Vertiefungen bestehenden Musters in der Oberfläche eines, insbesondere mit einer Oberflächenschicht versehenen festen Körpers - Google Patents
Verfahren zur Herstellung eines aus Vertiefungen bestehenden Musters in der Oberfläche eines, insbesondere mit einer Oberflächenschicht versehenen festen KörpersInfo
- Publication number
- DE2151200B2 DE2151200B2 DE2151200A DE2151200A DE2151200B2 DE 2151200 B2 DE2151200 B2 DE 2151200B2 DE 2151200 A DE2151200 A DE 2151200A DE 2151200 A DE2151200 A DE 2151200A DE 2151200 B2 DE2151200 B2 DE 2151200B2
- Authority
- DE
- Germany
- Prior art keywords
- ions
- component
- solid body
- ion beam
- depressions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 239000007787 solid Substances 0.000 title claims description 6
- 239000002344 surface layer Substances 0.000 title claims 2
- 238000004519 manufacturing process Methods 0.000 title description 3
- 238000000034 method Methods 0.000 claims description 30
- 150000002500 ions Chemical class 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 16
- 238000010884 ion-beam technique Methods 0.000 claims description 13
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- 239000007789 gas Substances 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 229910052734 helium Inorganic materials 0.000 claims description 2
- 229910052743 krypton Inorganic materials 0.000 claims description 2
- 229910052754 neon Inorganic materials 0.000 claims description 2
- 239000001307 helium Substances 0.000 claims 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims 1
- 239000000126 substance Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 238000005530 etching Methods 0.000 description 6
- 230000000873 masking effect Effects 0.000 description 6
- 230000001133 acceleration Effects 0.000 description 5
- 229920000642 polymer Polymers 0.000 description 5
- 238000010849 ion bombardment Methods 0.000 description 3
- 230000015654 memory Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000003116 impacting effect Effects 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 150000002835 noble gases Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/2633—Bombardment with radiation with high-energy radiation for etching, e.g. sputteretching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- Materials Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
- Magnetic Heads (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US081756A US3860783A (en) | 1970-10-19 | 1970-10-19 | Ion etching through a pattern mask |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2151200A1 DE2151200A1 (de) | 1972-04-20 |
| DE2151200B2 true DE2151200B2 (de) | 1979-10-04 |
Family
ID=22166191
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2151200A Ceased DE2151200B2 (de) | 1970-10-19 | 1971-10-14 | Verfahren zur Herstellung eines aus Vertiefungen bestehenden Musters in der Oberfläche eines, insbesondere mit einer Oberflächenschicht versehenen festen Körpers |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US3860783A (cg-RX-API-DMAC7.html) |
| JP (1) | JPS5540665B1 (cg-RX-API-DMAC7.html) |
| KR (1) | KR780000438B1 (cg-RX-API-DMAC7.html) |
| BE (1) | BE773998A (cg-RX-API-DMAC7.html) |
| CA (1) | CA926523A (cg-RX-API-DMAC7.html) |
| DE (1) | DE2151200B2 (cg-RX-API-DMAC7.html) |
| FR (1) | FR2111511A5 (cg-RX-API-DMAC7.html) |
| GB (1) | GB1364735A (cg-RX-API-DMAC7.html) |
| IT (1) | IT942719B (cg-RX-API-DMAC7.html) |
| NL (1) | NL170646C (cg-RX-API-DMAC7.html) |
| SE (1) | SE383280B (cg-RX-API-DMAC7.html) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4202194A1 (de) * | 1992-01-28 | 1993-07-29 | Convac Gmbh | Verfahren und vorrichtung zum partiellen entfernen von duennen schichten von einem substrat |
Families Citing this family (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3988564A (en) * | 1972-07-17 | 1976-10-26 | Hughes Aircraft Company | Ion beam micromachining method |
| US4049944A (en) * | 1973-02-28 | 1977-09-20 | Hughes Aircraft Company | Process for fabricating small geometry semiconductive devices including integrated components |
| DE2521543A1 (de) * | 1974-05-16 | 1975-11-27 | Crosfield Electronics Ltd | Verfahren und vorrichtung zur wiedergabe von bildern |
| JPS5230851B2 (cg-RX-API-DMAC7.html) * | 1974-10-11 | 1977-08-11 | ||
| JPS5738897B2 (cg-RX-API-DMAC7.html) * | 1974-11-19 | 1982-08-18 | ||
| US3920483A (en) * | 1974-11-25 | 1975-11-18 | Ibm | Method of ion implantation through a photoresist mask |
| US4207105A (en) * | 1975-01-27 | 1980-06-10 | Fuji Photo Film Co., Ltd. | Plasma-etching image in exposed AgX emulsion |
| JPS51105821A (en) * | 1975-03-14 | 1976-09-20 | Fuji Photo Film Co Ltd | Masukugazono keiseihoho |
| US4117301A (en) * | 1975-07-21 | 1978-09-26 | Rca Corporation | Method of making a submicrometer aperture in a substrate |
| US4016062A (en) * | 1975-09-11 | 1977-04-05 | International Business Machines Corporation | Method of forming a serrated surface topography |
| JPS5275341A (en) * | 1975-12-19 | 1977-06-24 | Rikagaku Kenkyusho | Method of producing echelette grating |
| FR2354617A1 (fr) * | 1976-06-08 | 1978-01-06 | Electro Resistance | Procede pour la fabrication de resistances electriques a partir de feuilles ou de films metalliques et resistances obtenues |
| US4045318A (en) * | 1976-07-30 | 1977-08-30 | Rca Corporation | Method of transferring a surface relief pattern from a poly(olefin sulfone) layer to a metal layer |
| GB1585460A (en) * | 1976-11-23 | 1981-03-04 | Lucas Industries Ltd | Method of manufacturing a lamp |
| DE2708792C3 (de) * | 1977-03-01 | 1980-07-10 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Verwendung des Ionenätzverf ahrens zum Strukturieren von Halbleiterschichten und Ionenätzverfahren für diese Verwendung |
| US4275286A (en) * | 1978-12-04 | 1981-06-23 | Hughes Aircraft Company | Process and mask for ion beam etching of fine patterns |
| US4214966A (en) * | 1979-03-20 | 1980-07-29 | Bell Telephone Laboratories, Incorporated | Process useful in the fabrication of articles with metallized surfaces |
| US4248688A (en) * | 1979-09-04 | 1981-02-03 | International Business Machines Corporation | Ion milling of thin metal films |
| US4564997A (en) * | 1981-04-21 | 1986-01-21 | Nippon-Telegraph And Telephone Public Corporation | Semiconductor device and manufacturing process thereof |
| US4426274A (en) | 1981-06-02 | 1984-01-17 | International Business Machines Corporation | Reactive ion etching apparatus with interlaced perforated anode |
| US4359373A (en) * | 1981-06-15 | 1982-11-16 | Rca Corporation | Method of formation of a blazed grating |
| IT1171401B (it) * | 1981-07-20 | 1987-06-10 | Selenia Ind Eletroniche Associ | Aggiustamento a valore trimming diresistori a film sottile mediante erosione ionica |
| US4460434A (en) * | 1982-04-15 | 1984-07-17 | At&T Bell Laboratories | Method for planarizing patterned surfaces |
| GB8319716D0 (en) * | 1983-07-21 | 1983-08-24 | Secr Defence | Reactive ion etching |
| GB2148769A (en) * | 1983-10-22 | 1985-06-05 | Standard Telephones Cables Ltd | Topographic feature formation by ion beam milling of a substrate |
| DE3509519A1 (de) * | 1985-03-16 | 1986-09-18 | Richard Heinze Kunststoff-Spritzgießwerke GmbH & Co, 4900 Herford | Tastenkoerper sowie verfahren und vorrichtung zu seiner herstellung |
| US4906594A (en) * | 1987-06-12 | 1990-03-06 | Agency Of Industrial Science And Technology | Surface smoothing method and method of forming SOI substrate using the surface smoothing method |
| CA2097388A1 (en) * | 1992-07-16 | 1994-01-17 | Susan Nord Bohlke | Topographical selective patterns |
| JP3394602B2 (ja) * | 1993-07-05 | 2003-04-07 | 株式会社荏原製作所 | 高速原子線を用いた加工方法 |
| US7150811B2 (en) * | 2002-11-26 | 2006-12-19 | Pei Company | Ion beam for target recovery |
| KR100845004B1 (ko) * | 2007-04-30 | 2008-07-09 | 삼성전자주식회사 | 나노 갭을 갖는 금속막 패턴의 형성 방법 및 이를 이용한분자크기의 소자 제조 방법 |
| US20100021720A1 (en) * | 2008-07-24 | 2010-01-28 | Shembel Elena M | Transparent coductive oxide and method of production thereof |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3330696A (en) * | 1967-07-11 | Method of fabricating thin film capacitors | ||
| NL257531A (cg-RX-API-DMAC7.html) * | 1960-03-30 | |||
| US3118050A (en) * | 1960-04-06 | 1964-01-14 | Alloyd Electronics Corp | Electron beam devices and processes |
| US3056881A (en) * | 1961-06-07 | 1962-10-02 | United Aircraft Corp | Method of making electrical conductor device |
| BE630858A (cg-RX-API-DMAC7.html) * | 1962-04-10 | 1900-01-01 | ||
| US3398237A (en) * | 1965-02-26 | 1968-08-20 | Minnesota Mining & Mfg | System for synchronizing a scanning electron beam with a rotating body |
| US3453723A (en) * | 1966-01-03 | 1969-07-08 | Texas Instruments Inc | Electron beam techniques in integrated circuits |
| US3445926A (en) * | 1967-02-28 | 1969-05-27 | Electro Optical Systems Inc | Production of semiconductor devices by use of ion beam implantation |
-
1970
- 1970-10-19 US US081756A patent/US3860783A/en not_active Expired - Lifetime
-
1971
- 1971-06-02 CA CA114669A patent/CA926523A/en not_active Expired
- 1971-10-07 SE SE7112698A patent/SE383280B/xx unknown
- 1971-10-14 DE DE2151200A patent/DE2151200B2/de not_active Ceased
- 1971-10-15 BE BE773998A patent/BE773998A/xx not_active IP Right Cessation
- 1971-10-15 JP JP8104871A patent/JPS5540665B1/ja active Pending
- 1971-10-18 IT IT70421/71A patent/IT942719B/it active
- 1971-10-18 FR FR7137382A patent/FR2111511A5/fr not_active Expired
- 1971-10-18 KR KR7101499A patent/KR780000438B1/ko not_active Expired
- 1971-10-19 NL NLAANVRAGE7114349,A patent/NL170646C/xx not_active IP Right Cessation
- 1971-10-19 GB GB4850071A patent/GB1364735A/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4202194A1 (de) * | 1992-01-28 | 1993-07-29 | Convac Gmbh | Verfahren und vorrichtung zum partiellen entfernen von duennen schichten von einem substrat |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5540665B1 (cg-RX-API-DMAC7.html) | 1980-10-20 |
| DE2151200A1 (de) | 1972-04-20 |
| CA926523A (en) | 1973-05-15 |
| IT942719B (it) | 1973-04-02 |
| US3860783A (en) | 1975-01-14 |
| NL7114349A (cg-RX-API-DMAC7.html) | 1972-04-21 |
| FR2111511A5 (cg-RX-API-DMAC7.html) | 1972-06-02 |
| NL170646C (nl) | 1982-12-01 |
| KR780000438B1 (en) | 1978-10-14 |
| BE773998A (fr) | 1972-01-31 |
| SE383280B (sv) | 1976-03-08 |
| GB1364735A (en) | 1974-08-29 |
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