DE2147028A1 - Ferroelektrische Vorrichtung und Ver fahren zu deren Herstellung - Google Patents
Ferroelektrische Vorrichtung und Ver fahren zu deren HerstellungInfo
- Publication number
- DE2147028A1 DE2147028A1 DE19712147028 DE2147028A DE2147028A1 DE 2147028 A1 DE2147028 A1 DE 2147028A1 DE 19712147028 DE19712147028 DE 19712147028 DE 2147028 A DE2147028 A DE 2147028A DE 2147028 A1 DE2147028 A1 DE 2147028A1
- Authority
- DE
- Germany
- Prior art keywords
- potassium nitrate
- ferroelectric
- layer
- electrical contact
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 26
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- FGIUAXJPYTZDNR-UHFFFAOYSA-N potassium nitrate Chemical compound [K+].[O-][N+]([O-])=O FGIUAXJPYTZDNR-UHFFFAOYSA-N 0.000 claims description 134
- 235000010333 potassium nitrate Nutrition 0.000 claims description 66
- 239000004323 potassium nitrate Substances 0.000 claims description 65
- 239000000463 material Substances 0.000 claims description 32
- 229910052782 aluminium Inorganic materials 0.000 claims description 17
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 17
- 238000010438 heat treatment Methods 0.000 claims description 17
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- 239000007788 liquid Substances 0.000 claims description 10
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 239000004332 silver Substances 0.000 claims description 7
- 239000007789 gas Substances 0.000 claims description 6
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 4
- 238000010791 quenching Methods 0.000 claims description 4
- 230000000171 quenching effect Effects 0.000 claims description 4
- 230000005855 radiation Effects 0.000 claims description 3
- 230000009466 transformation Effects 0.000 claims description 3
- 239000012298 atmosphere Substances 0.000 claims description 2
- 238000011010 flushing procedure Methods 0.000 claims description 2
- 239000007769 metal material Substances 0.000 claims description 2
- 238000013016 damping Methods 0.000 claims 1
- 238000010926 purge Methods 0.000 claims 1
- 210000004027 cell Anatomy 0.000 description 36
- 239000010409 thin film Substances 0.000 description 24
- 230000010287 polarization Effects 0.000 description 22
- 150000002500 ions Chemical group 0.000 description 11
- 239000013078 crystal Substances 0.000 description 10
- 230000006870 function Effects 0.000 description 10
- 230000005684 electric field Effects 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 239000010408 film Substances 0.000 description 7
- 238000001556 precipitation Methods 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 238000012360 testing method Methods 0.000 description 7
- 239000003990 capacitor Substances 0.000 description 6
- 230000008859 change Effects 0.000 description 6
- 230000002269 spontaneous effect Effects 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- BNGXYYYYKUGPPF-UHFFFAOYSA-M (3-methylphenyl)methyl-triphenylphosphanium;chloride Chemical compound [Cl-].CC1=CC=CC(C[P+](C=2C=CC=CC=2)(C=2C=CC=CC=2)C=2C=CC=CC=2)=C1 BNGXYYYYKUGPPF-UHFFFAOYSA-M 0.000 description 5
- 238000001816 cooling Methods 0.000 description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- -1 potassium nitride Chemical class 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000000875 corresponding effect Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000005294 ferromagnetic effect Effects 0.000 description 3
- 230000005291 magnetic effect Effects 0.000 description 3
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 3
- 229910052753 mercury Inorganic materials 0.000 description 3
- 239000002244 precipitate Substances 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 238000007738 vacuum evaporation Methods 0.000 description 3
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 2
- 229910002113 barium titanate Inorganic materials 0.000 description 2
- 238000009529 body temperature measurement Methods 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 238000013500 data storage Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000001066 destructive effect Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000011835 investigation Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 239000005297 pyrex Substances 0.000 description 2
- 210000000352 storage cell Anatomy 0.000 description 2
- 238000010998 test method Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 230000007723 transport mechanism Effects 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- AGNTUZCMJBTHOG-UHFFFAOYSA-N 3-[3-(2,3-dihydroxypropoxy)-2-hydroxypropoxy]propane-1,2-diol Chemical compound OCC(O)COCC(O)COCC(O)CO AGNTUZCMJBTHOG-UHFFFAOYSA-N 0.000 description 1
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 241000726768 Carpinus Species 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 206010021118 Hypotonia Diseases 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- 240000007313 Tilia cordata Species 0.000 description 1
- YZCKVEUIGOORGS-NJFSPNSNSA-N Tritium Chemical compound [3H] YZCKVEUIGOORGS-NJFSPNSNSA-N 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000000889 atomisation Methods 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003610 charcoal Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000001037 epileptic effect Effects 0.000 description 1
- 235000019441 ethanol Nutrition 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 230000005621 ferroelectricity Effects 0.000 description 1
- 239000003302 ferromagnetic material Substances 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910000402 monopotassium phosphate Inorganic materials 0.000 description 1
- 235000019796 monopotassium phosphate Nutrition 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- PJNZPQUBCPKICU-UHFFFAOYSA-N phosphoric acid;potassium Chemical compound [K].OP(O)(O)=O PJNZPQUBCPKICU-UHFFFAOYSA-N 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 229910001414 potassium ion Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 238000005496 tempering Methods 0.000 description 1
- 238000012549 training Methods 0.000 description 1
- 229910052722 tritium Inorganic materials 0.000 description 1
- 238000009489 vacuum treatment Methods 0.000 description 1
- 210000003462 vein Anatomy 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 230000003442 weekly effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G7/00—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture
- H01G7/02—Electrets, i.e. having a permanently-polarised dielectric
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G7/00—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture
- H01G7/02—Electrets, i.e. having a permanently-polarised dielectric
- H01G7/025—Electrets, i.e. having a permanently-polarised dielectric having an inorganic dielectric
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Semiconductor Memories (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Physical Vapour Deposition (AREA)
- Non-Volatile Memory (AREA)
- Inorganic Insulating Materials (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US7605970A | 1970-09-28 | 1970-09-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2147028A1 true DE2147028A1 (de) | 1972-04-06 |
Family
ID=22129683
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19712147028 Pending DE2147028A1 (de) | 1970-09-28 | 1971-09-21 | Ferroelektrische Vorrichtung und Ver fahren zu deren Herstellung |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US3728694A (enExample) |
| JP (1) | JPS5244181B1 (enExample) |
| CA (1) | CA951436A (enExample) |
| DE (1) | DE2147028A1 (enExample) |
| FR (1) | FR2108045B1 (enExample) |
| GB (1) | GB1325961A (enExample) |
| NL (1) | NL7113279A (enExample) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5214300A (en) * | 1970-09-28 | 1993-05-25 | Ramtron Corporation | Monolithic semiconductor integrated circuit ferroelectric memory device |
| US4713157A (en) * | 1976-02-17 | 1987-12-15 | Ramtron Corporation | Combined integrated circuit/ferroelectric memory device, and ion beam methods of constructing same |
| FR2341929A2 (fr) * | 1977-02-09 | 1977-09-16 | Technovation | Dispositif ferroelectrique et sa methode de fabrication |
| US4149301A (en) * | 1977-07-25 | 1979-04-17 | Ferrosil Corporation | Monolithic semiconductor integrated circuit-ferroelectric memory drive |
| JPS62222512A (ja) * | 1986-03-20 | 1987-09-30 | キヤノン株式会社 | 誘電体材料 |
| US4946710A (en) * | 1987-06-02 | 1990-08-07 | National Semiconductor Corporation | Method for preparing PLZT, PZT and PLT sol-gels and fabricating ferroelectric thin films |
| US5063539A (en) * | 1988-10-31 | 1991-11-05 | Raytheon Company | Ferroelectric memory with diode isolation |
| US5168420A (en) * | 1990-11-20 | 1992-12-01 | Bell Communications Research, Inc. | Ferroelectrics epitaxially grown on superconducting substrates |
| US5273927A (en) * | 1990-12-03 | 1993-12-28 | Micron Technology, Inc. | Method of making a ferroelectric capacitor and forming local interconnect |
| US5926412A (en) * | 1992-02-09 | 1999-07-20 | Raytheon Company | Ferroelectric memory structure |
| US5392189A (en) | 1993-04-02 | 1995-02-21 | Micron Semiconductor, Inc. | Capacitor compatible with high dielectric constant materials having two independent insulative layers and the method for forming same |
| US6791131B1 (en) * | 1993-04-02 | 2004-09-14 | Micron Technology, Inc. | Method for forming a storage cell capacitor compatible with high dielectric constant materials |
| US5524092A (en) * | 1995-02-17 | 1996-06-04 | Park; Jea K. | Multilayered ferroelectric-semiconductor memory-device |
| TW456027B (en) * | 1999-08-18 | 2001-09-21 | Matsushita Electronics Corp | Method of making ferroelectric thin film, ferroelectric capacitor, ferroelectric memory and method for fabricating ferroelectric memory |
| US8519846B2 (en) | 2004-03-16 | 2013-08-27 | Newage Industries, Inc. | Tracking system for gamma radiation sterilized bags and disposable items |
| US8592767B2 (en) * | 2006-08-07 | 2013-11-26 | The Trustees Of The University Of Pennsylvania | Tunable ferroelectric supported catalysts and method and uses thereof |
| US8405508B2 (en) | 2006-08-09 | 2013-03-26 | Emd Millipore Corporation | Use of gamma hardened RFID tags in pharmaceutical devices |
| CN101784876A (zh) | 2007-08-02 | 2010-07-21 | 米利波尔公司 | 采样系统 |
| US20090256679A1 (en) * | 2008-04-11 | 2009-10-15 | General Electric Company | Rfid based methods and systems for use in manufacturing and monitoring applications |
| US20100006204A1 (en) | 2008-07-07 | 2010-01-14 | Millipore Corporation | Wireless enabled bags and containers |
| FR2935537B1 (fr) * | 2008-08-28 | 2010-10-22 | Soitec Silicon On Insulator | Procede d'initiation d'adhesion moleculaire |
| FR2943177B1 (fr) | 2009-03-12 | 2011-05-06 | Soitec Silicon On Insulator | Procede de fabrication d'une structure multicouche avec report de couche circuit |
| FR2947380B1 (fr) | 2009-06-26 | 2012-12-14 | Soitec Silicon Insulator Technologies | Procede de collage par adhesion moleculaire. |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3142044A (en) * | 1961-05-17 | 1964-07-21 | Litton Systems Inc | Ceramic memory element |
-
1970
- 1970-09-28 US US00076059A patent/US3728694A/en not_active Expired - Lifetime
-
1971
- 1971-07-28 GB GB3537671A patent/GB1325961A/en not_active Expired
- 1971-08-18 JP JP46062841A patent/JPS5244181B1/ja active Pending
- 1971-09-21 DE DE19712147028 patent/DE2147028A1/de active Pending
- 1971-09-24 FR FR7135357A patent/FR2108045B1/fr not_active Expired
- 1971-09-27 CA CA123,752,A patent/CA951436A/en not_active Expired
- 1971-09-28 NL NL7113279A patent/NL7113279A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| FR2108045B1 (enExample) | 1976-06-04 |
| NL7113279A (enExample) | 1972-03-30 |
| CA951436A (en) | 1974-07-16 |
| GB1325961A (en) | 1973-08-08 |
| US3728694A (en) | 1973-04-17 |
| JPS5244181B1 (enExample) | 1977-11-05 |
| FR2108045A1 (enExample) | 1972-05-12 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OD | Request for examination | ||
| OHW | Rejection | ||
| OI | Miscellaneous see part 1 |