DE2145956A1 - Verfahren zum gleichzeitigen Eindiffundieren mehrerer Verunreinigungen in ein Halbleiter-Grundmaterial - Google Patents

Verfahren zum gleichzeitigen Eindiffundieren mehrerer Verunreinigungen in ein Halbleiter-Grundmaterial

Info

Publication number
DE2145956A1
DE2145956A1 DE19712145956 DE2145956A DE2145956A1 DE 2145956 A1 DE2145956 A1 DE 2145956A1 DE 19712145956 DE19712145956 DE 19712145956 DE 2145956 A DE2145956 A DE 2145956A DE 2145956 A1 DE2145956 A1 DE 2145956A1
Authority
DE
Germany
Prior art keywords
diffusion
impurities
gallium
powder
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19712145956
Other languages
German (de)
English (en)
Inventor
Auf Nichtnennung Antrag
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Silec Semi Conducteurs SA
Original Assignee
Silec Semi Conducteurs SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Silec Semi Conducteurs SA filed Critical Silec Semi Conducteurs SA
Publication of DE2145956A1 publication Critical patent/DE2145956A1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S252/00—Compositions
    • Y10S252/95—Doping agent source material
    • Y10S252/951—Doping agent source material for vapor transport
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/923—Diffusion through a layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE19712145956 1970-12-07 1971-09-14 Verfahren zum gleichzeitigen Eindiffundieren mehrerer Verunreinigungen in ein Halbleiter-Grundmaterial Pending DE2145956A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7043900A FR2126904B1 (enExample) 1970-12-07 1970-12-07

Publications (1)

Publication Number Publication Date
DE2145956A1 true DE2145956A1 (de) 1972-06-15

Family

ID=9065329

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19712145956 Pending DE2145956A1 (de) 1970-12-07 1971-09-14 Verfahren zum gleichzeitigen Eindiffundieren mehrerer Verunreinigungen in ein Halbleiter-Grundmaterial

Country Status (3)

Country Link
US (1) US3814639A (enExample)
DE (1) DE2145956A1 (enExample)
FR (1) FR2126904B1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2516704A1 (fr) * 1981-11-13 1983-05-20 Thomson Csf Thyristor a faible courant de gachette immunise par rapport aux declenchements

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2855972C2 (de) * 1978-12-23 1984-09-27 SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg Halbleiteranordnung mit zwei integrierten und antiparallel geschalteten Dioden sowie Verfahren zu ihrer Herstellung
DE3815615A1 (de) * 1988-05-07 1989-11-16 Bosch Gmbh Robert Verfahren zur herstellung einer hochsperrenden leistungsdiode
FR2709872B1 (fr) * 1993-09-07 1995-11-24 Sgs Thomson Microelectronics Diode de shockley bidirectionnelle.

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3476993A (en) * 1959-09-08 1969-11-04 Gen Electric Five layer and junction bridging terminal switching device
FR1438731A (fr) * 1964-06-20 1966-05-13 Siemens Ag Procédé pour la diffusion de produits étrangers dans un corps semi-conducteur monocristallin
US3468729A (en) * 1966-03-21 1969-09-23 Westinghouse Electric Corp Method of making a semiconductor by oxidizing and simultaneous diffusion of impurities having different rates of diffusivity
SE322847B (enExample) * 1966-12-27 1970-04-20 Asea Ab

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2516704A1 (fr) * 1981-11-13 1983-05-20 Thomson Csf Thyristor a faible courant de gachette immunise par rapport aux declenchements

Also Published As

Publication number Publication date
FR2126904B1 (enExample) 1974-04-26
US3814639A (en) 1974-06-04
FR2126904A1 (enExample) 1972-10-13

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Legal Events

Date Code Title Description
OHA Expiration of time for request for examination