FR2126904B1 - - Google Patents

Info

Publication number
FR2126904B1
FR2126904B1 FR7043900A FR7043900A FR2126904B1 FR 2126904 B1 FR2126904 B1 FR 2126904B1 FR 7043900 A FR7043900 A FR 7043900A FR 7043900 A FR7043900 A FR 7043900A FR 2126904 B1 FR2126904 B1 FR 2126904B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7043900A
Other languages
French (fr)
Other versions
FR2126904A1 (enExample
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Silec Semi Conducteurs SA
Original Assignee
Silec Semi Conducteurs SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Silec Semi Conducteurs SA filed Critical Silec Semi Conducteurs SA
Priority to FR7043900A priority Critical patent/FR2126904B1/fr
Priority to DE19712145956 priority patent/DE2145956A1/de
Priority to US00181500A priority patent/US3814639A/en
Publication of FR2126904A1 publication Critical patent/FR2126904A1/fr
Application granted granted Critical
Publication of FR2126904B1 publication Critical patent/FR2126904B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/12—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S252/00—Compositions
    • Y10S252/95—Doping agent source material
    • Y10S252/951—Doping agent source material for vapor transport
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/923—Diffusion through a layer
FR7043900A 1970-12-07 1970-12-07 Expired FR2126904B1 (enExample)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR7043900A FR2126904B1 (enExample) 1970-12-07 1970-12-07
DE19712145956 DE2145956A1 (de) 1970-12-07 1971-09-14 Verfahren zum gleichzeitigen Eindiffundieren mehrerer Verunreinigungen in ein Halbleiter-Grundmaterial
US00181500A US3814639A (en) 1970-12-07 1971-09-17 Method for the simultaneous diffusion of impurities in silicon and semiconductor devices resulting from it

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7043900A FR2126904B1 (enExample) 1970-12-07 1970-12-07

Publications (2)

Publication Number Publication Date
FR2126904A1 FR2126904A1 (enExample) 1972-10-13
FR2126904B1 true FR2126904B1 (enExample) 1974-04-26

Family

ID=9065329

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7043900A Expired FR2126904B1 (enExample) 1970-12-07 1970-12-07

Country Status (3)

Country Link
US (1) US3814639A (enExample)
DE (1) DE2145956A1 (enExample)
FR (1) FR2126904B1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2855972C2 (de) * 1978-12-23 1984-09-27 SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg Halbleiteranordnung mit zwei integrierten und antiparallel geschalteten Dioden sowie Verfahren zu ihrer Herstellung
FR2516704B1 (fr) * 1981-11-13 1985-09-06 Thomson Csf Thyristor a faible courant de gachette immunise par rapport aux declenchements
DE3815615A1 (de) * 1988-05-07 1989-11-16 Bosch Gmbh Robert Verfahren zur herstellung einer hochsperrenden leistungsdiode
FR2709872B1 (fr) * 1993-09-07 1995-11-24 Sgs Thomson Microelectronics Diode de shockley bidirectionnelle.

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3476993A (en) * 1959-09-08 1969-11-04 Gen Electric Five layer and junction bridging terminal switching device
FR1438731A (fr) * 1964-06-20 1966-05-13 Siemens Ag Procédé pour la diffusion de produits étrangers dans un corps semi-conducteur monocristallin
US3468729A (en) * 1966-03-21 1969-09-23 Westinghouse Electric Corp Method of making a semiconductor by oxidizing and simultaneous diffusion of impurities having different rates of diffusivity
SE322847B (enExample) * 1966-12-27 1970-04-20 Asea Ab

Also Published As

Publication number Publication date
DE2145956A1 (de) 1972-06-15
FR2126904A1 (enExample) 1972-10-13
US3814639A (en) 1974-06-04

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