FR2086311B1 - - Google Patents

Info

Publication number
FR2086311B1
FR2086311B1 FR7114351A FR7114351A FR2086311B1 FR 2086311 B1 FR2086311 B1 FR 2086311B1 FR 7114351 A FR7114351 A FR 7114351A FR 7114351 A FR7114351 A FR 7114351A FR 2086311 B1 FR2086311 B1 FR 2086311B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7114351A
Other languages
French (fr)
Other versions
FR2086311A1 (enExample
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of FR2086311A1 publication Critical patent/FR2086311A1/fr
Application granted granted Critical
Publication of FR2086311B1 publication Critical patent/FR2086311B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/227—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a Schottky barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
FR7114351A 1970-04-24 1971-04-22 Expired FR2086311B1 (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP45035757A JPS4919957B1 (enExample) 1970-04-24 1970-04-24

Publications (2)

Publication Number Publication Date
FR2086311A1 FR2086311A1 (enExample) 1971-12-31
FR2086311B1 true FR2086311B1 (enExample) 1976-04-16

Family

ID=12450694

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7114351A Expired FR2086311B1 (enExample) 1970-04-24 1971-04-22

Country Status (7)

Country Link
US (1) US3928865A (enExample)
JP (1) JPS4919957B1 (enExample)
CA (1) CA929258A (enExample)
DE (1) DE2120031A1 (enExample)
FR (1) FR2086311B1 (enExample)
GB (1) GB1351617A (enExample)
NL (1) NL155987B (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4149907A (en) * 1977-07-07 1979-04-17 Rca Corporation Method of making camera tube target by modifying Schottky barrier heights
US4408216A (en) * 1978-06-02 1983-10-04 International Rectifier Corporation Schottky device and method of manufacture using palladium and platinum intermetallic alloys and titanium barrier for low reverse leakage over wide temperature range
US4432008A (en) * 1980-07-21 1984-02-14 The Board Of Trustees Of The Leland Stanford Junior University Gold-doped IC resistor region
US4490709A (en) * 1982-12-06 1984-12-25 The United States Of America As Represented By The United States Department Of Energy InP:Fe Photoconducting device
US5279678A (en) * 1992-01-13 1994-01-18 Photon Energy, Inc. Photovoltaic cell with thin CS layer

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3417248A (en) * 1962-03-27 1968-12-17 Gen Electric Tunneling semiconductor device exhibiting storage characteristics
US3271637A (en) * 1963-07-22 1966-09-06 Nasa Gaas solar detector using manganese as a doping agent
US3390311A (en) * 1964-09-14 1968-06-25 Gen Electric Seleno-telluride p-nu junction device utilizing deep trapping states
US3424910A (en) * 1965-04-19 1969-01-28 Hughes Aircraft Co Switching circuit using a two-carrier negative resistance device
US3461356A (en) * 1965-08-19 1969-08-12 Matsushita Electric Industrial Co Ltd Negative resistance semiconductor device having an intrinsic region
US3436613A (en) * 1965-12-29 1969-04-01 Gen Electric High gain silicon photodetector

Also Published As

Publication number Publication date
CA929258A (en) 1973-06-26
DE2120031B2 (enExample) 1972-10-26
NL7105541A (enExample) 1971-10-26
DE2120031A1 (de) 1971-11-11
FR2086311A1 (enExample) 1971-12-31
GB1351617A (en) 1974-05-01
US3928865A (en) 1975-12-23
NL155987B (nl) 1978-02-15
JPS4919957B1 (enExample) 1974-05-21

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Legal Events

Date Code Title Description
ST Notification of lapse