JPS4919957B1 - - Google Patents

Info

Publication number
JPS4919957B1
JPS4919957B1 JP45035757A JP3575770A JPS4919957B1 JP S4919957 B1 JPS4919957 B1 JP S4919957B1 JP 45035757 A JP45035757 A JP 45035757A JP 3575770 A JP3575770 A JP 3575770A JP S4919957 B1 JPS4919957 B1 JP S4919957B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP45035757A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP45035757A priority Critical patent/JPS4919957B1/ja
Priority to US136159A priority patent/US3928865A/en
Priority to GB1087271*[A priority patent/GB1351617A/en
Priority to FR7114351A priority patent/FR2086311B1/fr
Priority to DE19712120031 priority patent/DE2120031A1/de
Priority to NL7105541.A priority patent/NL155987B/xx
Priority to CA111213A priority patent/CA929258A/en
Publication of JPS4919957B1 publication Critical patent/JPS4919957B1/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Light Receiving Elements (AREA)
  • Electrodes Of Semiconductors (AREA)
JP45035757A 1970-04-24 1970-04-24 Pending JPS4919957B1 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP45035757A JPS4919957B1 (ja) 1970-04-24 1970-04-24
US136159A US3928865A (en) 1970-04-24 1971-04-21 Photo-electrical transducer
GB1087271*[A GB1351617A (en) 1970-04-24 1971-04-22 Photo-electrical transducer
FR7114351A FR2086311B1 (ja) 1970-04-24 1971-04-22
DE19712120031 DE2120031A1 (de) 1970-04-24 1971-04-23 Photoelektrischer Wandler
NL7105541.A NL155987B (nl) 1970-04-24 1971-04-23 Werkwijze voor het vervaardigen van een foto-elektrische halfgeleideromzetter, alsmede foto-elektrische halfgeleideromzetter, vervaardigd volgens deze werkwijze.
CA111213A CA929258A (en) 1970-04-24 1971-04-23 Photo-electrical transducer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP45035757A JPS4919957B1 (ja) 1970-04-24 1970-04-24

Publications (1)

Publication Number Publication Date
JPS4919957B1 true JPS4919957B1 (ja) 1974-05-21

Family

ID=12450694

Family Applications (1)

Application Number Title Priority Date Filing Date
JP45035757A Pending JPS4919957B1 (ja) 1970-04-24 1970-04-24

Country Status (7)

Country Link
US (1) US3928865A (ja)
JP (1) JPS4919957B1 (ja)
CA (1) CA929258A (ja)
DE (1) DE2120031A1 (ja)
FR (1) FR2086311B1 (ja)
GB (1) GB1351617A (ja)
NL (1) NL155987B (ja)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4149907A (en) * 1977-07-07 1979-04-17 Rca Corporation Method of making camera tube target by modifying Schottky barrier heights
US4408216A (en) * 1978-06-02 1983-10-04 International Rectifier Corporation Schottky device and method of manufacture using palladium and platinum intermetallic alloys and titanium barrier for low reverse leakage over wide temperature range
US4432008A (en) * 1980-07-21 1984-02-14 The Board Of Trustees Of The Leland Stanford Junior University Gold-doped IC resistor region
US4490709A (en) * 1982-12-06 1984-12-25 The United States Of America As Represented By The United States Department Of Energy InP:Fe Photoconducting device
US5279678A (en) * 1992-01-13 1994-01-18 Photon Energy, Inc. Photovoltaic cell with thin CS layer

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3417248A (en) * 1962-03-27 1968-12-17 Gen Electric Tunneling semiconductor device exhibiting storage characteristics
US3271637A (en) * 1963-07-22 1966-09-06 Nasa Gaas solar detector using manganese as a doping agent
US3390311A (en) * 1964-09-14 1968-06-25 Gen Electric Seleno-telluride p-nu junction device utilizing deep trapping states
US3424910A (en) * 1965-04-19 1969-01-28 Hughes Aircraft Co Switching circuit using a two-carrier negative resistance device
US3461356A (en) * 1965-08-19 1969-08-12 Matsushita Electric Ind Co Ltd Negative resistance semiconductor device having an intrinsic region
US3436613A (en) * 1965-12-29 1969-04-01 Gen Electric High gain silicon photodetector

Also Published As

Publication number Publication date
NL7105541A (ja) 1971-10-26
CA929258A (en) 1973-06-26
DE2120031A1 (de) 1971-11-11
NL155987B (nl) 1978-02-15
FR2086311B1 (ja) 1976-04-16
GB1351617A (en) 1974-05-01
DE2120031B2 (ja) 1972-10-26
US3928865A (en) 1975-12-23
FR2086311A1 (ja) 1971-12-31

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