DE2120031A1 - Photoelektrischer Wandler - Google Patents

Photoelektrischer Wandler

Info

Publication number
DE2120031A1
DE2120031A1 DE19712120031 DE2120031A DE2120031A1 DE 2120031 A1 DE2120031 A1 DE 2120031A1 DE 19712120031 DE19712120031 DE 19712120031 DE 2120031 A DE2120031 A DE 2120031A DE 2120031 A1 DE2120031 A1 DE 2120031A1
Authority
DE
Germany
Prior art keywords
barrier layer
photoelectric converter
junction
low energy
rectifying barrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19712120031
Other languages
German (de)
English (en)
Other versions
DE2120031B2 (enExample
Inventor
Akio Ikeda Yamashita (Japan). P
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of DE2120031A1 publication Critical patent/DE2120031A1/de
Publication of DE2120031B2 publication Critical patent/DE2120031B2/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/227—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a Schottky barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Photovoltaic Devices (AREA)
  • Light Receiving Elements (AREA)
  • Electrodes Of Semiconductors (AREA)
DE19712120031 1970-04-24 1971-04-23 Photoelektrischer Wandler Pending DE2120031A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP45035757A JPS4919957B1 (enExample) 1970-04-24 1970-04-24

Publications (2)

Publication Number Publication Date
DE2120031A1 true DE2120031A1 (de) 1971-11-11
DE2120031B2 DE2120031B2 (enExample) 1972-10-26

Family

ID=12450694

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19712120031 Pending DE2120031A1 (de) 1970-04-24 1971-04-23 Photoelektrischer Wandler

Country Status (7)

Country Link
US (1) US3928865A (enExample)
JP (1) JPS4919957B1 (enExample)
CA (1) CA929258A (enExample)
DE (1) DE2120031A1 (enExample)
FR (1) FR2086311B1 (enExample)
GB (1) GB1351617A (enExample)
NL (1) NL155987B (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4149907A (en) * 1977-07-07 1979-04-17 Rca Corporation Method of making camera tube target by modifying Schottky barrier heights
US4408216A (en) * 1978-06-02 1983-10-04 International Rectifier Corporation Schottky device and method of manufacture using palladium and platinum intermetallic alloys and titanium barrier for low reverse leakage over wide temperature range
US4432008A (en) * 1980-07-21 1984-02-14 The Board Of Trustees Of The Leland Stanford Junior University Gold-doped IC resistor region
US4490709A (en) * 1982-12-06 1984-12-25 The United States Of America As Represented By The United States Department Of Energy InP:Fe Photoconducting device
US5279678A (en) * 1992-01-13 1994-01-18 Photon Energy, Inc. Photovoltaic cell with thin CS layer

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3417248A (en) * 1962-03-27 1968-12-17 Gen Electric Tunneling semiconductor device exhibiting storage characteristics
US3271637A (en) * 1963-07-22 1966-09-06 Nasa Gaas solar detector using manganese as a doping agent
US3390311A (en) * 1964-09-14 1968-06-25 Gen Electric Seleno-telluride p-nu junction device utilizing deep trapping states
US3424910A (en) * 1965-04-19 1969-01-28 Hughes Aircraft Co Switching circuit using a two-carrier negative resistance device
US3461356A (en) * 1965-08-19 1969-08-12 Matsushita Electric Industrial Co Ltd Negative resistance semiconductor device having an intrinsic region
US3436613A (en) * 1965-12-29 1969-04-01 Gen Electric High gain silicon photodetector

Also Published As

Publication number Publication date
CA929258A (en) 1973-06-26
DE2120031B2 (enExample) 1972-10-26
NL7105541A (enExample) 1971-10-26
FR2086311B1 (enExample) 1976-04-16
FR2086311A1 (enExample) 1971-12-31
GB1351617A (en) 1974-05-01
US3928865A (en) 1975-12-23
NL155987B (nl) 1978-02-15
JPS4919957B1 (enExample) 1974-05-21

Similar Documents

Publication Publication Date Title
DE69321822T2 (de) Photodiodenstruktur
DE3615515A1 (de) Halbleitereinrichtung zur umwandlung von licht in elektrische energie
DE2607005C2 (de) Integrierte Tandem-Solarzelle
DE2546232A1 (de) Mehrschichtiges halbleiterbauelement hohen photoelektrischen wirkungsgrades
DE3111828A1 (de) Vorrichtung zur umsetzung elektromagnetischer strahlung in elektrische energie
DE891580C (de) Lichtelektrische Halbleitereinrichtungen
DE2624348A1 (de) Heterouebergang-pn-diodenphotodetektor
DE1764565C3 (de) Strahlungsempfindliches Halbleiterbauelement
DE2107564A1 (de) Lichtaktivierter Thyristor
EP0003130B1 (de) Halbleiter-Diode mit 3-Schichten-Struktur und ihre Verwendung
DE69005048T2 (de) Matrix von Heteroübergang-Photodioden.
DE3305030C2 (enExample)
DE3688633T2 (de) Photoelektrischer Wandler.
DE202023101309U1 (de) Solarzelle und Photovoltaikmodul
DE2846096A1 (de) Solarzelle aus halbleitermaterial
DE3408317C2 (de) Solarzelle aus amorphem Silicium
DE2456131A1 (de) Fotosensible vorrichtung
DE2328194B2 (de) Fotoelektrische halbleitervorrichtung und verfahren zu ihrer herstellung
DE3903837C2 (enExample)
DE3222848C2 (enExample)
DE2120031A1 (de) Photoelektrischer Wandler
DE69920608T2 (de) Solarzellenbatterie
DE1194515B (de) Sonnenzelle
DE1282803B (de) Lichtempfindliche Festkoerpervorrichtung
DE3823546A1 (de) Avalanche-fotodetektor