NL7105541A - - Google Patents

Info

Publication number
NL7105541A
NL7105541A NL7105541A NL7105541A NL7105541A NL 7105541 A NL7105541 A NL 7105541A NL 7105541 A NL7105541 A NL 7105541A NL 7105541 A NL7105541 A NL 7105541A NL 7105541 A NL7105541 A NL 7105541A
Authority
NL
Netherlands
Application number
NL7105541A
Other versions
NL155987B (nl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7105541A publication Critical patent/NL7105541A/xx
Publication of NL155987B publication Critical patent/NL155987B/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/227Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a Schottky barrier
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00Subject matter not provided for in other groups of this subclass
NL7105541.A 1970-04-24 1971-04-23 Werkwijze voor het vervaardigen van een foto-elektrische halfgeleideromzetter, alsmede foto-elektrische halfgeleideromzetter, vervaardigd volgens deze werkwijze. NL155987B (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP45035757A JPS4919957B1 (enExample) 1970-04-24 1970-04-24

Publications (2)

Publication Number Publication Date
NL7105541A true NL7105541A (enExample) 1971-10-26
NL155987B NL155987B (nl) 1978-02-15

Family

ID=12450694

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7105541.A NL155987B (nl) 1970-04-24 1971-04-23 Werkwijze voor het vervaardigen van een foto-elektrische halfgeleideromzetter, alsmede foto-elektrische halfgeleideromzetter, vervaardigd volgens deze werkwijze.

Country Status (7)

Country Link
US (1) US3928865A (enExample)
JP (1) JPS4919957B1 (enExample)
CA (1) CA929258A (enExample)
DE (1) DE2120031A1 (enExample)
FR (1) FR2086311B1 (enExample)
GB (1) GB1351617A (enExample)
NL (1) NL155987B (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4149907A (en) * 1977-07-07 1979-04-17 Rca Corporation Method of making camera tube target by modifying Schottky barrier heights
US4408216A (en) * 1978-06-02 1983-10-04 International Rectifier Corporation Schottky device and method of manufacture using palladium and platinum intermetallic alloys and titanium barrier for low reverse leakage over wide temperature range
US4432008A (en) * 1980-07-21 1984-02-14 The Board Of Trustees Of The Leland Stanford Junior University Gold-doped IC resistor region
US4490709A (en) * 1982-12-06 1984-12-25 The United States Of America As Represented By The United States Department Of Energy InP:Fe Photoconducting device
US5279678A (en) * 1992-01-13 1994-01-18 Photon Energy, Inc. Photovoltaic cell with thin CS layer

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3417248A (en) * 1962-03-27 1968-12-17 Gen Electric Tunneling semiconductor device exhibiting storage characteristics
US3271637A (en) * 1963-07-22 1966-09-06 Nasa Gaas solar detector using manganese as a doping agent
US3390311A (en) * 1964-09-14 1968-06-25 Gen Electric Seleno-telluride p-nu junction device utilizing deep trapping states
US3424910A (en) * 1965-04-19 1969-01-28 Hughes Aircraft Co Switching circuit using a two-carrier negative resistance device
US3461356A (en) * 1965-08-19 1969-08-12 Matsushita Electric Industrial Co Ltd Negative resistance semiconductor device having an intrinsic region
US3436613A (en) * 1965-12-29 1969-04-01 Gen Electric High gain silicon photodetector

Also Published As

Publication number Publication date
CA929258A (en) 1973-06-26
DE2120031B2 (enExample) 1972-10-26
DE2120031A1 (de) 1971-11-11
FR2086311B1 (enExample) 1976-04-16
FR2086311A1 (enExample) 1971-12-31
GB1351617A (en) 1974-05-01
US3928865A (en) 1975-12-23
NL155987B (nl) 1978-02-15
JPS4919957B1 (enExample) 1974-05-21

Similar Documents

Publication Publication Date Title
AR204384A1 (enExample)
FR2086311B1 (enExample)
AU2044470A (enExample)
AU1146470A (enExample)
CH566217A5 (enExample)
AU1326870A (enExample)
AU2017870A (enExample)
AU2085370A (enExample)
AU2130570A (enExample)
AU2248170A (enExample)
AU1336970A (enExample)
AR195465A1 (enExample)
AU2130770A (enExample)
AU2144270A (enExample)
AU2119370A (enExample)
AU2061170A (enExample)
AU1328670A (enExample)
AU1235770A (enExample)
AU1086670A (enExample)
AU1189670A (enExample)
AU2112570A (enExample)
AU2115870A (enExample)
AU1247570A (enExample)
AU1343870A (enExample)
AU1277070A (enExample)

Legal Events

Date Code Title Description
V1 Lapsed because of non-payment of the annual fee
NL80 Information provided on patent owner name for an already discontinued patent

Owner name: MATSUSH ELEC