DE2135567B2 - Integrierte Schaltungsstruktur und Verfahren zu deren Herstellung - Google Patents
Integrierte Schaltungsstruktur und Verfahren zu deren HerstellungInfo
- Publication number
- DE2135567B2 DE2135567B2 DE2135567A DE2135567A DE2135567B2 DE 2135567 B2 DE2135567 B2 DE 2135567B2 DE 2135567 A DE2135567 A DE 2135567A DE 2135567 A DE2135567 A DE 2135567A DE 2135567 B2 DE2135567 B2 DE 2135567B2
- Authority
- DE
- Germany
- Prior art keywords
- layer
- capacitor
- electrodes
- oxide layer
- resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 21
- 239000003990 capacitor Substances 0.000 claims description 57
- 239000004020 conductor Substances 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 23
- 239000000463 material Substances 0.000 claims description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052715 tantalum Inorganic materials 0.000 claims description 8
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 7
- 238000007743 anodising Methods 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- 229910052735 hafnium Inorganic materials 0.000 claims description 6
- 230000000873 masking effect Effects 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 5
- 238000005507 spraying Methods 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 238000005516 engineering process Methods 0.000 claims description 4
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 4
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 2
- 230000008021 deposition Effects 0.000 claims description 2
- -1 hafnium nitride Chemical class 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- 238000007740 vapor deposition Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 claims 6
- 239000010409 thin film Substances 0.000 claims 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 2
- 229910000449 hafnium oxide Inorganic materials 0.000 claims 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims 2
- 239000011810 insulating material Substances 0.000 claims 2
- 230000002093 peripheral effect Effects 0.000 claims 2
- 241001676573 Minium Species 0.000 claims 1
- 241000158147 Sator Species 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 claims 1
- 238000002048 anodisation reaction Methods 0.000 claims 1
- 239000000919 ceramic Substances 0.000 claims 1
- 238000004140 cleaning Methods 0.000 claims 1
- 239000013078 crystal Substances 0.000 claims 1
- 239000011521 glass Substances 0.000 claims 1
- 230000001771 impaired effect Effects 0.000 claims 1
- 229910052742 iron Inorganic materials 0.000 claims 1
- 229910052758 niobium Inorganic materials 0.000 claims 1
- 239000010955 niobium Substances 0.000 claims 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims 1
- 108090000623 proteins and genes Proteins 0.000 claims 1
- 229910052594 sapphire Inorganic materials 0.000 claims 1
- 239000010980 sapphire Substances 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 229910052726 zirconium Inorganic materials 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 description 9
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 3
- 238000009966 trimming Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000003792 electrolyte Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYRNMWDESIRGOS-UHFFFAOYSA-N [Mo].[Au] Chemical compound [Mo].[Au] VYRNMWDESIRGOS-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Substances OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000000313 electron-beam-induced deposition Methods 0.000 description 1
- 238000013100 final test Methods 0.000 description 1
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/006—Thin film resistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N97/00—Electric solid-state thin-film or thick-film devices, not otherwise provided for
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US5661070A | 1970-07-20 | 1970-07-20 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2135567A1 DE2135567A1 (de) | 1972-01-27 |
| DE2135567B2 true DE2135567B2 (de) | 1974-10-10 |
Family
ID=22005551
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2135567A Pending DE2135567B2 (de) | 1970-07-20 | 1971-07-16 | Integrierte Schaltungsstruktur und Verfahren zu deren Herstellung |
Country Status (8)
| Country | Link |
|---|---|
| CA (1) | CA970878A (cg-RX-API-DMAC10.html) |
| DE (1) | DE2135567B2 (cg-RX-API-DMAC10.html) |
| FR (1) | FR2103114A5 (cg-RX-API-DMAC10.html) |
| GB (2) | GB1358387A (cg-RX-API-DMAC10.html) |
| MY (2) | MY7500235A (cg-RX-API-DMAC10.html) |
| NL (1) | NL7109916A (cg-RX-API-DMAC10.html) |
| SE (1) | SE369659B (cg-RX-API-DMAC10.html) |
| SU (1) | SU475003A3 (cg-RX-API-DMAC10.html) |
-
1971
- 1971-06-25 CA CA116,636A patent/CA970878A/en not_active Expired
- 1971-07-16 DE DE2135567A patent/DE2135567B2/de active Pending
- 1971-07-19 NL NL7109916A patent/NL7109916A/xx unknown
- 1971-07-19 SE SE09274/71A patent/SE369659B/xx unknown
- 1971-07-20 GB GB3402771A patent/GB1358387A/en not_active Expired
- 1971-07-20 SU SU1685902A patent/SU475003A3/ru active
- 1971-07-20 GB GB4800473A patent/GB1358388A/en not_active Expired
- 1971-07-20 FR FR7126543A patent/FR2103114A5/fr not_active Expired
-
1975
- 1975-12-30 MY MY235/75A patent/MY7500235A/xx unknown
- 1975-12-30 MY MY222/75A patent/MY7500222A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CA970878A (en) | 1975-07-08 |
| SE369659B (cg-RX-API-DMAC10.html) | 1974-09-09 |
| FR2103114A5 (cg-RX-API-DMAC10.html) | 1972-04-07 |
| MY7500235A (en) | 1975-12-31 |
| DE2135567A1 (de) | 1972-01-27 |
| NL7109916A (cg-RX-API-DMAC10.html) | 1972-01-24 |
| GB1358388A (en) | 1974-07-03 |
| SU475003A3 (ru) | 1975-06-25 |
| MY7500222A (en) | 1975-12-31 |
| GB1358387A (en) | 1974-07-03 |
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