DE2132570B2 - - Google Patents
Info
- Publication number
- DE2132570B2 DE2132570B2 DE2132570A DE2132570A DE2132570B2 DE 2132570 B2 DE2132570 B2 DE 2132570B2 DE 2132570 A DE2132570 A DE 2132570A DE 2132570 A DE2132570 A DE 2132570A DE 2132570 B2 DE2132570 B2 DE 2132570B2
- Authority
- DE
- Germany
- Prior art keywords
- collector
- base
- conductors
- emitter
- read
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004020 conductor Substances 0.000 claims description 42
- 230000015654 memory Effects 0.000 claims description 28
- 239000004065 semiconductor Substances 0.000 claims description 25
- 239000011159 matrix material Substances 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 16
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 230000007704 transition Effects 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 238000013461 design Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 4
- 238000010276 construction Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000012549 training Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910002056 binary alloy Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000010079 rubber tapping Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/06—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using diode elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/18—Auxiliary circuits, e.g. for writing into memory
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US9749270A | 1970-12-14 | 1970-12-14 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE2132570A1 DE2132570A1 (de) | 1972-06-22 |
| DE2132570B2 true DE2132570B2 (ja) | 1980-02-28 |
| DE2132570C3 DE2132570C3 (de) | 1980-11-20 |
Family
ID=22263655
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2132570A Expired DE2132570C3 (de) | 1970-12-14 | 1971-06-30 | Programmierbarer Festwertspeicher und Verfahren zu dessen Herstellung |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS5242016B1 (ja) |
| DE (1) | DE2132570C3 (ja) |
| GB (1) | GB1352716A (ja) |
| IT (1) | IT944899B (ja) |
-
1971
- 1971-06-30 DE DE2132570A patent/DE2132570C3/de not_active Expired
- 1971-07-27 GB GB3513371A patent/GB1352716A/en not_active Expired
- 1971-08-11 JP JP46060927A patent/JPS5242016B1/ja active Pending
- 1971-11-12 IT IT54047/71A patent/IT944899B/it active
Also Published As
| Publication number | Publication date |
|---|---|
| DE2132570A1 (de) | 1972-06-22 |
| GB1352716A (en) | 1974-05-08 |
| JPS5242016B1 (ja) | 1977-10-21 |
| IT944899B (it) | 1973-04-20 |
| DE2132570C3 (de) | 1980-11-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE2041343C3 (de) | Festwertspeicher mit einmaliger Einschreibemöglichkeit | |
| DE2235801C3 (de) | Monolithischer Festwertspeicher und Verfahren zur Herstellung | |
| DE2017642C3 (de) | Programmierbarer Festwertspeicher | |
| DE2132652C3 (de) | Verfahren zum Herstellen eines Festwertspeichers | |
| DE1284517B (de) | Integrierte Halbleiterschaltung | |
| DE2023219C3 (de) | Programmierbarer Halbleiter-Festwertspeicher | |
| DE1954939B2 (de) | Speicheranordnung mit einer elektrischen Speichermatrix · | |
| DE2538631A1 (de) | Speicher als integrierte schaltung | |
| DE3428067C2 (de) | Halbleiter-Überspannungsunterdrücker mit genau vorherbestimmbarer Einsatzspannung und Verfahren zur Herstellung desselben | |
| DE1131329B (de) | Steuerbares Halbleiterbauelement | |
| DE2727405A1 (de) | Feldgesteuerter thyristor mit eingebettetem gitter | |
| DE1803035B2 (de) | Permanentspeicherzelle | |
| DE2133881A1 (de) | Integrierte Schaltung | |
| DE2850864C2 (de) | Halbleiteranordnung mit einem Festwertspeicher und Verfahren zur Herstellung einer derartigen Halbleiteranordnung | |
| DE1614250C3 (de) | Halbleiteranordnung mit Gruppen von sich kreuzenden Verbindungen | |
| DE2904254A1 (de) | Halbleiteranordnung | |
| DE2132570C3 (de) | Programmierbarer Festwertspeicher und Verfahren zu dessen Herstellung | |
| DE2128014C3 (ja) | ||
| DE1132662B (de) | Flaechentransistor mit zwei ohmschen Steuerelektroden fuer den Emitter-Kollektor-Strom an der Basiszone | |
| DE1589919A1 (de) | Integrierte Schaltmatrix mit Feldeffekttransistoren | |
| DE3133245A1 (de) | "programmierbarer speicherbaustein und programmierverfahren" | |
| DE2922926C2 (de) | Mit zwei Anschlüssen versehener, optisch zündbarer, monolithischer Zweiweg-Thyristor | |
| DE2527191A1 (de) | Thyristor | |
| DE2246331A1 (de) | Halbleiter-speicher | |
| DE2011851C3 (de) | Elektrische Speichermatrix in Kompaktbauweise. |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OD | Request for examination | ||
| C3 | Grant after two publication steps (3rd publication) |